JPS58212185A - 硫化カドミウム太陽電池 - Google Patents

硫化カドミウム太陽電池

Info

Publication number
JPS58212185A
JPS58212185A JP58036085A JP3608583A JPS58212185A JP S58212185 A JPS58212185 A JP S58212185A JP 58036085 A JP58036085 A JP 58036085A JP 3608583 A JP3608583 A JP 3608583A JP S58212185 A JPS58212185 A JP S58212185A
Authority
JP
Japan
Prior art keywords
copper
layer
sulfide
contact
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58036085A
Other languages
English (en)
Japanese (ja)
Inventor
ピ−タ−・ジヨン・バセツト
アウグステイヌス・ウイルヘルムス・ベルヘイイエン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PURUUTETSUKU Ltd
Original Assignee
PURUUTETSUKU Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PURUUTETSUKU Ltd filed Critical PURUUTETSUKU Ltd
Publication of JPS58212185A publication Critical patent/JPS58212185A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58036085A 1982-03-08 1983-03-07 硫化カドミウム太陽電池 Pending JPS58212185A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB823011523 1982-03-08
EP82301152A EP0091998A1 (en) 1982-03-08 1982-03-08 Cadmium sulphide solar cells

Publications (1)

Publication Number Publication Date
JPS58212185A true JPS58212185A (ja) 1983-12-09

Family

ID=8189594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58036085A Pending JPS58212185A (ja) 1982-03-08 1983-03-07 硫化カドミウム太陽電池

Country Status (16)

Country Link
US (1) US4463215A (enExample)
EP (1) EP0091998A1 (enExample)
JP (1) JPS58212185A (enExample)
KR (1) KR840004310A (enExample)
AR (1) AR230897A1 (enExample)
AU (1) AU1212583A (enExample)
BR (1) BR8301111A (enExample)
CA (1) CA1194970A (enExample)
DK (1) DK100983A (enExample)
ES (1) ES520376A0 (enExample)
GR (1) GR77860B (enExample)
IL (1) IL68061A0 (enExample)
NO (1) NO830781L (enExample)
NZ (1) NZ203464A (enExample)
ZA (1) ZA831566B (enExample)
ZW (1) ZW6083A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111380A (ja) * 1987-10-23 1989-04-28 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1207421A (en) * 1983-11-14 1986-07-08 Ottilia F. Toth High efficiency stable cds cu.sub.2s solar cells manufacturing process using thick film methodology
US4666569A (en) * 1984-12-28 1987-05-19 Standard Oil Commercial Development Company Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
DE3542111A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Verfahren zur durchfuehrung eines glimmprozesses
DE3542116A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Photovoltaische zelle
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104420A (en) * 1975-08-25 1978-08-01 Photon Power, Inc. Photovoltaic cell
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
US4267398A (en) * 1979-05-29 1981-05-12 University Of Delaware Thin film photovoltaic cells
US4239553A (en) * 1979-05-29 1980-12-16 University Of Delaware Thin film photovoltaic cells having increased durability and operating life and method for making same
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4260428A (en) * 1980-03-05 1981-04-07 Ses, Incorporated Photovoltaic cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111380A (ja) * 1987-10-23 1989-04-28 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法

Also Published As

Publication number Publication date
ES8404570A1 (es) 1984-04-16
ZA831566B (en) 1983-11-30
IL68061A0 (en) 1983-06-15
US4463215A (en) 1984-07-31
DK100983A (da) 1983-09-09
EP0091998A1 (en) 1983-10-26
ES520376A0 (es) 1984-04-16
KR840004310A (ko) 1984-10-10
ZW6083A1 (en) 1983-05-25
AU1212583A (en) 1983-09-15
BR8301111A (pt) 1983-11-22
NO830781L (no) 1983-09-09
DK100983D0 (da) 1983-02-28
CA1194970A (en) 1985-10-08
GR77860B (enExample) 1984-09-25
NZ203464A (en) 1985-07-12
AR230897A1 (es) 1984-07-31

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