JPS58212160A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS58212160A
JPS58212160A JP57094557A JP9455782A JPS58212160A JP S58212160 A JPS58212160 A JP S58212160A JP 57094557 A JP57094557 A JP 57094557A JP 9455782 A JP9455782 A JP 9455782A JP S58212160 A JPS58212160 A JP S58212160A
Authority
JP
Japan
Prior art keywords
groove
film
mos
semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57094557A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0348666B2 (de
Inventor
Makoto Dan
檀　良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57094557A priority Critical patent/JPS58212160A/ja
Publication of JPS58212160A publication Critical patent/JPS58212160A/ja
Publication of JPH0348666B2 publication Critical patent/JPH0348666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57094557A 1982-06-02 1982-06-02 半導体記憶装置 Granted JPS58212160A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57094557A JPS58212160A (ja) 1982-06-02 1982-06-02 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57094557A JPS58212160A (ja) 1982-06-02 1982-06-02 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58212160A true JPS58212160A (ja) 1983-12-09
JPH0348666B2 JPH0348666B2 (de) 1991-07-25

Family

ID=14113620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57094557A Granted JPS58212160A (ja) 1982-06-02 1982-06-02 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS58212160A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129461A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置とその製造方法
JPS61170060A (ja) * 1985-01-23 1986-07-31 Mitsubishi Electric Corp 半導体メモリ
JPS6298766A (ja) * 1985-10-21 1987-05-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ダイナミツク・メモリ装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129461A (ja) * 1983-01-13 1984-07-25 Fujitsu Ltd 半導体装置とその製造方法
JPH0480540B2 (de) * 1983-01-13 1992-12-18 Fujitsu Ltd
JPS61170060A (ja) * 1985-01-23 1986-07-31 Mitsubishi Electric Corp 半導体メモリ
JPS6298766A (ja) * 1985-10-21 1987-05-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ダイナミツク・メモリ装置及びその製造方法

Also Published As

Publication number Publication date
JPH0348666B2 (de) 1991-07-25

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