JPH0348666B2 - - Google Patents
Info
- Publication number
- JPH0348666B2 JPH0348666B2 JP57094557A JP9455782A JPH0348666B2 JP H0348666 B2 JPH0348666 B2 JP H0348666B2 JP 57094557 A JP57094557 A JP 57094557A JP 9455782 A JP9455782 A JP 9455782A JP H0348666 B2 JPH0348666 B2 JP H0348666B2
- Authority
- JP
- Japan
- Prior art keywords
- mos
- groove
- capacitor electrode
- semiconductor
- mos capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57094557A JPS58212160A (ja) | 1982-06-02 | 1982-06-02 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57094557A JPS58212160A (ja) | 1982-06-02 | 1982-06-02 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212160A JPS58212160A (ja) | 1983-12-09 |
| JPH0348666B2 true JPH0348666B2 (de) | 1991-07-25 |
Family
ID=14113620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57094557A Granted JPS58212160A (ja) | 1982-06-02 | 1982-06-02 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212160A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129461A (ja) * | 1983-01-13 | 1984-07-25 | Fujitsu Ltd | 半導体装置とその製造方法 |
| JPH0669081B2 (ja) * | 1985-01-23 | 1994-08-31 | 三菱電機株式会社 | 半導体メモリの製造方法 |
| US4649625A (en) * | 1985-10-21 | 1987-03-17 | International Business Machines Corporation | Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor |
-
1982
- 1982-06-02 JP JP57094557A patent/JPS58212160A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58212160A (ja) | 1983-12-09 |
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