JPS58199523A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58199523A
JPS58199523A JP8157682A JP8157682A JPS58199523A JP S58199523 A JPS58199523 A JP S58199523A JP 8157682 A JP8157682 A JP 8157682A JP 8157682 A JP8157682 A JP 8157682A JP S58199523 A JPS58199523 A JP S58199523A
Authority
JP
Japan
Prior art keywords
layer
film
wiring
oxygen concentration
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8157682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0113224B2 (enExample
Inventor
Shinichi Ofuji
大藤　晋一
Tetsuo Hosoya
細矢　徹夫
Chisato Hashimoto
橋本　千里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8157682A priority Critical patent/JPS58199523A/ja
Publication of JPS58199523A publication Critical patent/JPS58199523A/ja
Publication of JPH0113224B2 publication Critical patent/JPH0113224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP8157682A 1982-05-17 1982-05-17 半導体装置の製造方法 Granted JPS58199523A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8157682A JPS58199523A (ja) 1982-05-17 1982-05-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8157682A JPS58199523A (ja) 1982-05-17 1982-05-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58199523A true JPS58199523A (ja) 1983-11-19
JPH0113224B2 JPH0113224B2 (enExample) 1989-03-03

Family

ID=13750128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8157682A Granted JPS58199523A (ja) 1982-05-17 1982-05-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58199523A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807015A (en) * 1984-12-24 1989-02-21 Hitachi, Ltd. Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807015A (en) * 1984-12-24 1989-02-21 Hitachi, Ltd. Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide

Also Published As

Publication number Publication date
JPH0113224B2 (enExample) 1989-03-03

Similar Documents

Publication Publication Date Title
US5464500A (en) Method for taper etching metal
JPS58199523A (ja) 半導体装置の製造方法
JPH02189981A (ja) 半導体装置及びその製造法
JP3046829B2 (ja) モリブデン膜の形成方法
EP0088808A1 (en) Process for producing niobium Josephson junctions
JP2000077396A (ja) 半導体装置及びその製造方法
JPS5932126A (ja) 半導体装置の製造方法
JPS5966125A (ja) 半導体装置の製造方法
JPS63307739A (ja) 半導体装置の製造方法
JPS6410096B2 (enExample)
JPS5979585A (ja) ジヨセフソン接合素子とその製造方法
JPH0511432B2 (enExample)
EP0191981A1 (en) Multilayer circuit
JPS6249735B2 (enExample)
JPS61144083A (ja) ジヨセフソン接合素子の形成方法
JPH042129A (ja) 半導体装置の製造方法
JP2872298B2 (ja) 半導体装置の製造方法
JPS60120526A (ja) 微細パタン形成法
JPH06102656A (ja) フォトマスク形成方法
JPH0212827A (ja) 半導体装置の製造方法
JPS62222657A (ja) 導体配線およびその形成方法
JPH0493028A (ja) 半導体装置の製造方法
JPS6380550A (ja) 半導体装置の配線前駆体
JPS59163838A (ja) 半導体装置の製造方法
JPS6167975A (ja) ジヨセフソン接合素子の製造方法