JPS58197755A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58197755A
JPS58197755A JP57080390A JP8039082A JPS58197755A JP S58197755 A JPS58197755 A JP S58197755A JP 57080390 A JP57080390 A JP 57080390A JP 8039082 A JP8039082 A JP 8039082A JP S58197755 A JPS58197755 A JP S58197755A
Authority
JP
Japan
Prior art keywords
metal
solder
film circuit
metal plates
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57080390A
Other languages
English (en)
Inventor
Shuichiro Aku
安久　脩一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57080390A priority Critical patent/JPS58197755A/ja
Publication of JPS58197755A publication Critical patent/JPS58197755A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 不発明は半導体装置、特に高周波帯で用いられる混成集
積回路装置に関するものであるＯ近年、マイクロ波半導
体素子の急速な進夛に伴ない装置の小、形化、高信頼化
を目的として、マイクル波回路ｔ−膜歯路基板上に集積
化したマイクロ波装置が広く用いられる廉になってさた
。又、史に小形化をはかるため、膜回路基板上にパッケ
ージングされていない半導体チップに＠掻装着したマイ
クロ波集積回路Ｉ装置も普及しつつある０しかしマイク
ロ妓電刀用集積回路装倉は放熱特性を良好にしなければ
ならないが、その場合逆にマイクロ波特性が息くなるた
め普及が庫れている◎従来、マイクロ波電力用半導体チ
ップを直接線回路基板に装着したマイクロ波電力用集積
回ｗ！Ｉ装置は纂１図に示すものがほとんどである。す
なわち−電体基板ｌの上に形成された７１１ｉ！１１路
４０上に放熱良好な金Ｊｌｌｉ＆６を設けその上に高周
波電力用半導体素子７がＡ　ｕ　−Ｓ　ｂＡｉ）のソル
ダーで半田付され、この高周波電力用半導体素子７は入
力用膜回路５及び出力用腺回路３に夫々Ａｕ＠等の配線
用金ａｌｌ線８．９を用いて接続される□更に前記紡電
体基板１はＰｂ−８ｎ等のソルダにより放熱板ｌに半田
付される。
しかしこの様な構成のものは放熱を２！慮した金属板６
の故に、図からも明らかな碌に配線用金稿＠Ｂ　、　９
の長さが長くなり、その部分に大きな自己インダクタン
スを有することになプ高周波特性を劣化させるという欠
点が生じていた。
本発明の目的は放熱特性を層化させることなく素子特性
を向上せしめた半導体装置ｔｌＩ供することにある。
本発明は半導体素子の電極から引禽出される配縁用金編
線が接続されるｊＩＩ［ｇｌ路の部分を半導体素子の高
さとｌＷＩ程直に高くしたことｔ％敵とする＠以下図面
を用いて本発明の一実施例につき詳細に説明する◎ 第２図は本賽施例の蚤部断面呻である。
アル宿す等の誘電体基板１′の上に形成された膜回路４
′の上に放熱良好な金属板６′及び高周波電力用半導体
素子７′がＡｕ−５ｂ等のソルダで半田付され工いる＠
又、入力用層回路５′及び出力用膜回路３′の上にはＡ
ｕ−８ｎ等のソルダによｎ５ｔｙ記半導体素子７′の上
＆面とほぼ同１Ｍ１ｔの高さになるように金属板ｌＯ及
び１１が半田付される。この金属板１０．１１は少なく
とも金線〇’ｅ９’が接続される部分にのみ設けておけ
ばよい０高崗波電力用半導体素子７と前記金属板１０及
び１１とは金４１８′及び９′によシ熱圧ＩＮ郷の方法
で配−される。そして前記誘電体基板１′はＰｂ−８ｎ
等のソルダにより放熱板２′に半田付される。
上記の＊ａな説明より明らかな轍に本構造によれば配線
用金属ｆｉ１８’及び９′は短かくてよいのでその自己
インダクタンスを非常に小さくすることかで龜高周波特
性を格段と向上させることができる。又、電力用半導体
素子７′とアル宿す等の誘電体基板の間には放熱の良好
な金属板６１′が介在されている丸めに放熱も良好であ
ることは明らかである。
尚、金４１１０，１１の高さは金属板６′と同４！度も
しくはそれより高くした方がよい。また本発明は通常の
半導体装置の容器内で、外部リードの先端に金属突起を
設けることに適用してもよい。
【図面の簡単な説明】
５１１図は従来の高周波電力混成集積回路の一実施例を
示す断面図、＠２図は本発明による高周波電力混成集積
回路の一実施例を示す＃面略図である。、 １　、　ｌ’・・・誘電体基板、２．２’・・・放熱板
、３゜３′・・・出力用膜回路、４．４′・・・Ｉ１１
回路、５．５′・・・入力用膜回路、６．６’・・・金
属板、７．７’・・・高周波電力用半導体素子、８．８
’・・・配−用金属線、９．９’・・・配−用金属−１
１０，１１・・・金属板Ｏ 代理人　弁虐十　　内　　原　　　　晋（′λ） ＼ ＄／閉 第２　図

Claims (1)

  1. 【特許請求の範囲】 金属板上にｉｆ、ｆｉされた半導体集子と、該半導体集
    子と導電体【用いて電気的Ｋｍ絖される金属Ｉ−と、そ
    の上に設けられた他の金属板とｔ有し、＾１ｆ記半導体
    素子と前記他の金属板とが前記導電体によって配線され
    ていることを％黴とする半導体装置０
JP57080390A 1982-05-13 1982-05-13 半導体装置 Pending JPS58197755A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080390A JPS58197755A (ja) 1982-05-13 1982-05-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080390A JPS58197755A (ja) 1982-05-13 1982-05-13 半導体装置

Publications (1)

Publication Number Publication Date
JPS58197755A true JPS58197755A (ja) 1983-11-17

Family

ID=13716955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080390A Pending JPS58197755A (ja) 1982-05-13 1982-05-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS58197755A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2389458A (en) * 2002-03-27 2003-12-10 Toshiba Kk Microwave integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2389458A (en) * 2002-03-27 2003-12-10 Toshiba Kk Microwave integrated circuit
GB2389458B (en) * 2002-03-27 2004-08-11 Toshiba Kk Microwave integrated circuit

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