JPS58192348A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58192348A JPS58192348A JP7590282A JP7590282A JPS58192348A JP S58192348 A JPS58192348 A JP S58192348A JP 7590282 A JP7590282 A JP 7590282A JP 7590282 A JP7590282 A JP 7590282A JP S58192348 A JPS58192348 A JP S58192348A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- mask
- film
- channel
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7590282A JPS58192348A (ja) | 1982-05-06 | 1982-05-06 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7590282A JPS58192348A (ja) | 1982-05-06 | 1982-05-06 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58192348A true JPS58192348A (ja) | 1983-11-09 |
| JPS6238857B2 JPS6238857B2 (enrdf_load_stackoverflow) | 1987-08-20 |
Family
ID=13589726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7590282A Granted JPS58192348A (ja) | 1982-05-06 | 1982-05-06 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58192348A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5004701A (en) * | 1988-01-29 | 1991-04-02 | Nec Corporation | Method of forming isolation region in integrated circuit semiconductor device |
-
1982
- 1982-05-06 JP JP7590282A patent/JPS58192348A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5004701A (en) * | 1988-01-29 | 1991-04-02 | Nec Corporation | Method of forming isolation region in integrated circuit semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6238857B2 (enrdf_load_stackoverflow) | 1987-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6242382B2 (enrdf_load_stackoverflow) | ||
| JP3325432B2 (ja) | Ｍｏｓ型半導体装置及びその製造方法 | |
| JPS58192348A (ja) | 半導体装置の製造方法 | |
| JPS6240857B2 (enrdf_load_stackoverflow) | ||
| JPH03259564A (ja) | 半導体装置の製造方法 | |
| JPH05226466A (ja) | 半導体装置の製造方法 | |
| JPS6237543B2 (enrdf_load_stackoverflow) | ||
| JPS60105247A (ja) | 半導体装置の製造方法 | |
| JPS63241965A (ja) | 絶縁ゲ−ト型電界効果トランジスタおよびその製造方法 | |
| JPH09266255A (ja) | 半導体装置の製造方法 | |
| JPS59124142A (ja) | 半導体装置の製造方法 | |
| JPS63144543A (ja) | 半導体素子間分離領域の形成方法 | |
| JPS6025247A (ja) | 半導体装置の製造方法 | |
| JPH0567634A (ja) | Ｍｉｓ型半導体装置の製造方法 | |
| JPH0469433B2 (enrdf_load_stackoverflow) | ||
| JPS6358852A (ja) | 半導体集積回路装置の製造方法 | |
| JPH03188665A (ja) | Ｍｏｓ型半導体装置及びその製造方法 | |
| JPS5951152B2 (ja) | 半導体装置の製造方法 | |
| JPS6312380B2 (enrdf_load_stackoverflow) | ||
| JPS58137259A (ja) | 半導体装置の製造方法 | |
| JPH08111511A (ja) | 半導体装置の製造方法 | |
| JPH05259446A (ja) | 半導体装置の製造方法 | |
| JPS60226169A (ja) | 半導体装置の製造方法 | |
| JPS61113255A (ja) | 半導体装置の製造方法 | |
| JPS62245649A (ja) | 半導体装置及びその製造方法 |