JPS58192345A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58192345A
JPS58192345A JP7516682A JP7516682A JPS58192345A JP S58192345 A JPS58192345 A JP S58192345A JP 7516682 A JP7516682 A JP 7516682A JP 7516682 A JP7516682 A JP 7516682A JP S58192345 A JPS58192345 A JP S58192345A
Authority
JP
Japan
Prior art keywords
layer
active region
silicon
semiconductor device
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7516682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310895B2 (OSRAM
Inventor
Mutsunobu Arita
有田　睦信
Nobuyoshi Awaya
信義 粟屋
Masaaki Sato
政明 佐藤
Michiharu Tanabe
田部　道晴
Kazuto Sakuma
佐久間　一人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7516682A priority Critical patent/JPS58192345A/ja
Publication of JPS58192345A publication Critical patent/JPS58192345A/ja
Publication of JPS6310895B2 publication Critical patent/JPS6310895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP7516682A 1982-05-07 1982-05-07 半導体装置の製造方法 Granted JPS58192345A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7516682A JPS58192345A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7516682A JPS58192345A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58192345A true JPS58192345A (ja) 1983-11-09
JPS6310895B2 JPS6310895B2 (OSRAM) 1988-03-10

Family

ID=13568338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7516682A Granted JPS58192345A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58192345A (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125039A (ja) * 1984-11-21 1986-06-12 Nec Corp 半導体装置の製造方法
JPS61198743A (ja) * 1985-02-28 1986-09-03 New Japan Radio Co Ltd 半導体装置の製造方法
JPS629644A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62229856A (ja) * 1985-11-07 1987-10-08 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン シリコン島状部の埋設壁分離
JP2006100322A (ja) * 2004-09-28 2006-04-13 Seiko Epson Corp 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法
JP2014515192A (ja) * 2011-04-14 2014-06-26 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 水平部材を含むスペーサを有するウェハ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102276A (OSRAM) * 1974-01-09 1975-08-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102276A (OSRAM) * 1974-01-09 1975-08-13

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125039A (ja) * 1984-11-21 1986-06-12 Nec Corp 半導体装置の製造方法
JPS61198743A (ja) * 1985-02-28 1986-09-03 New Japan Radio Co Ltd 半導体装置の製造方法
JPS629644A (ja) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62229856A (ja) * 1985-11-07 1987-10-08 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン シリコン島状部の埋設壁分離
JP2006100322A (ja) * 2004-09-28 2006-04-13 Seiko Epson Corp 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法
JP2014515192A (ja) * 2011-04-14 2014-06-26 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 水平部材を含むスペーサを有するウェハ

Also Published As

Publication number Publication date
JPS6310895B2 (OSRAM) 1988-03-10

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