JPS58191461A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58191461A
JPS58191461A JP57074753A JP7475382A JPS58191461A JP S58191461 A JPS58191461 A JP S58191461A JP 57074753 A JP57074753 A JP 57074753A JP 7475382 A JP7475382 A JP 7475382A JP S58191461 A JPS58191461 A JP S58191461A
Authority
JP
Japan
Prior art keywords
transistor
polycrystalline silicon
film
silicon film
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57074753A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049387B2 (enExample
Inventor
Shinji Onga
恩賀　伸二
Makoto Dan
檀　良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57074753A priority Critical patent/JPS58191461A/ja
Publication of JPS58191461A publication Critical patent/JPS58191461A/ja
Publication of JPH049387B2 publication Critical patent/JPH049387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP57074753A 1982-05-04 1982-05-04 半導体装置の製造方法 Granted JPS58191461A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57074753A JPS58191461A (ja) 1982-05-04 1982-05-04 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57074753A JPS58191461A (ja) 1982-05-04 1982-05-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58191461A true JPS58191461A (ja) 1983-11-08
JPH049387B2 JPH049387B2 (enExample) 1992-02-20

Family

ID=13556336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57074753A Granted JPS58191461A (ja) 1982-05-04 1982-05-04 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58191461A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109357A (ja) * 2008-10-03 2010-05-13 Semiconductor Energy Lab Co Ltd 表示装置
JP2011029579A (ja) * 2008-10-03 2011-02-10 Semiconductor Energy Lab Co Ltd 表示装置およびその作製方法
JP2019212927A (ja) * 2009-09-24 2019-12-12 株式会社半導体エネルギー研究所 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109357A (ja) * 2008-10-03 2010-05-13 Semiconductor Energy Lab Co Ltd 表示装置
JP2011029579A (ja) * 2008-10-03 2011-02-10 Semiconductor Energy Lab Co Ltd 表示装置およびその作製方法
US9324874B2 (en) 2008-10-03 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising an oxide semiconductor
US9978776B2 (en) 2008-10-03 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US10685985B2 (en) 2008-10-03 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device
US12230638B2 (en) 2008-10-03 2025-02-18 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2019212927A (ja) * 2009-09-24 2019-12-12 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH049387B2 (enExample) 1992-02-20

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