JPS58190061A - アモルファスシリコン半導体装置 - Google Patents

アモルファスシリコン半導体装置

Info

Publication number
JPS58190061A
JPS58190061A JP7242882A JP7242882A JPS58190061A JP S58190061 A JPS58190061 A JP S58190061A JP 7242882 A JP7242882 A JP 7242882A JP 7242882 A JP7242882 A JP 7242882A JP S58190061 A JPS58190061 A JP S58190061A
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
ohmic electrode
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7242882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546106B2 (ko
Inventor
Toshio Aoki
寿男 青木
Mitsushi Ikeda
光志 池田
Koji Suzuki
幸治 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7242882A priority Critical patent/JPS58190061A/ja
Publication of JPS58190061A publication Critical patent/JPS58190061A/ja
Publication of JPH0546106B2 publication Critical patent/JPH0546106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7242882A 1982-04-28 1982-04-28 アモルファスシリコン半導体装置 Granted JPS58190061A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7242882A JPS58190061A (ja) 1982-04-28 1982-04-28 アモルファスシリコン半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7242882A JPS58190061A (ja) 1982-04-28 1982-04-28 アモルファスシリコン半導体装置

Publications (2)

Publication Number Publication Date
JPS58190061A true JPS58190061A (ja) 1983-11-05
JPH0546106B2 JPH0546106B2 (ko) 1993-07-13

Family

ID=13489004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7242882A Granted JPS58190061A (ja) 1982-04-28 1982-04-28 アモルファスシリコン半導体装置

Country Status (1)

Country Link
JP (1) JPS58190061A (ko)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968975A (ja) * 1982-10-12 1984-04-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS59124162A (ja) * 1982-12-29 1984-07-18 Sharp Corp 薄膜トランジスタ
JPS6014473A (ja) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd 薄膜トランジスタの電極構造
JPS6151878A (ja) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd 表示用パネルの製造方法
JPS61193485A (ja) * 1985-02-22 1986-08-27 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイの製造方法
JPS6272168A (ja) * 1985-08-02 1987-04-02 ゼネラル・エレクトリツク・カンパニイ マトリクス液晶表示装置用のｎ↑＋非晶質シリコン薄膜電界効果トランジスタ
JPS6292371A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPS6490560A (en) * 1987-10-01 1989-04-07 Casio Computer Co Ltd Thin-film transistor
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
US5188974A (en) * 1987-10-31 1993-02-23 Canon Kabushiki Kaisha Method of manufacturing semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868171A (ko) * 1971-12-20 1973-09-17
JPS50125683A (ko) * 1974-03-20 1975-10-02
JPS51147290A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor device
JPS5687364A (en) * 1979-12-18 1981-07-15 Nec Corp Semiconductor device
JPS56135938A (en) * 1980-03-28 1981-10-23 Yoshie Hasegawa Fixed probe board

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868171A (ko) * 1971-12-20 1973-09-17
JPS50125683A (ko) * 1974-03-20 1975-10-02
JPS51147290A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor device
JPS5687364A (en) * 1979-12-18 1981-07-15 Nec Corp Semiconductor device
JPS56135938A (en) * 1980-03-28 1981-10-23 Yoshie Hasegawa Fixed probe board

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968975A (ja) * 1982-10-12 1984-04-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS59124162A (ja) * 1982-12-29 1984-07-18 Sharp Corp 薄膜トランジスタ
JPS6014473A (ja) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd 薄膜トランジスタの電極構造
JPS6151878A (ja) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd 表示用パネルの製造方法
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
JPS61193485A (ja) * 1985-02-22 1986-08-27 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイの製造方法
JPS6272168A (ja) * 1985-08-02 1987-04-02 ゼネラル・エレクトリツク・カンパニイ マトリクス液晶表示装置用のｎ↑＋非晶質シリコン薄膜電界効果トランジスタ
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
JPS6292371A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPS6490560A (en) * 1987-10-01 1989-04-07 Casio Computer Co Ltd Thin-film transistor
US5188974A (en) * 1987-10-31 1993-02-23 Canon Kabushiki Kaisha Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0546106B2 (ko) 1993-07-13

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