JPH0546106B2 - - Google Patents
Info
- Publication number
- JPH0546106B2 JPH0546106B2 JP57072428A JP7242882A JPH0546106B2 JP H0546106 B2 JPH0546106 B2 JP H0546106B2 JP 57072428 A JP57072428 A JP 57072428A JP 7242882 A JP7242882 A JP 7242882A JP H0546106 B2 JPH0546106 B2 JP H0546106B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- tft
- amorphous silicon
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 -Si-Cu Chemical class 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7242882A JPS58190061A (ja) | 1982-04-28 | 1982-04-28 | アモルファスシリコン半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7242882A JPS58190061A (ja) | 1982-04-28 | 1982-04-28 | アモルファスシリコン半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58190061A JPS58190061A (ja) | 1983-11-05 |
| JPH0546106B2 true JPH0546106B2 (ko) | 1993-07-13 |
Family
ID=13489004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7242882A Granted JPS58190061A (ja) | 1982-04-28 | 1982-04-28 | アモルファスシリコン半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58190061A (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5968975A (ja) * | 1982-10-12 | 1984-04-19 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS59124162A (ja) * | 1982-12-29 | 1984-07-18 | Sharp Corp | 薄膜トランジスタ |
| JPS6014473A (ja) * | 1983-07-05 | 1985-01-25 | Asahi Glass Co Ltd | 薄膜トランジスタの電極構造 |
| JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
| JPS61193485A (ja) * | 1985-02-22 | 1986-08-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイの製造方法 |
| US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
| US4855806A (en) * | 1985-08-02 | 1989-08-08 | General Electric Company | Thin film transistor with aluminum contacts and nonaluminum metallization |
| JPS6292371A (ja) * | 1985-10-18 | 1987-04-27 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
| JPS6490560A (en) * | 1987-10-01 | 1989-04-07 | Casio Computer Co Ltd | Thin-film transistor |
| US5188974A (en) * | 1987-10-31 | 1993-02-23 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4868171A (ko) * | 1971-12-20 | 1973-09-17 | ||
| JPS50125683A (ko) * | 1974-03-20 | 1975-10-02 | ||
| JPS51147290A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor device |
| JPS5687364A (en) * | 1979-12-18 | 1981-07-15 | Nec Corp | Semiconductor device |
| JPS56135938A (en) * | 1980-03-28 | 1981-10-23 | Yoshie Hasegawa | Fixed probe board |
-
1982
- 1982-04-28 JP JP7242882A patent/JPS58190061A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4868171A (ko) * | 1971-12-20 | 1973-09-17 | ||
| JPS50125683A (ko) * | 1974-03-20 | 1975-10-02 | ||
| JPS51147290A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor device |
| JPS5687364A (en) * | 1979-12-18 | 1981-07-15 | Nec Corp | Semiconductor device |
| JPS56135938A (en) * | 1980-03-28 | 1981-10-23 | Yoshie Hasegawa | Fixed probe board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58190061A (ja) | 1983-11-05 |
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