JPS58182260A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS58182260A
JPS58182260A JP57065925A JP6592582A JPS58182260A JP S58182260 A JPS58182260 A JP S58182260A JP 57065925 A JP57065925 A JP 57065925A JP 6592582 A JP6592582 A JP 6592582A JP S58182260 A JPS58182260 A JP S58182260A
Authority
JP
Japan
Prior art keywords
region
conductivity type
type
transistor
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57065925A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0561775B2 (enExample
Inventor
Toyoki Takemoto
竹本　豊樹
Tsutomu Fujita
勉 藤田
Haruyasu Yamada
山田　晴保
Tadanaka Yoneda
米田　忠央
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57065925A priority Critical patent/JPS58182260A/ja
Priority to DE8383103726T priority patent/DE3361832D1/de
Priority to EP83103726A priority patent/EP0093304B1/en
Publication of JPS58182260A publication Critical patent/JPS58182260A/ja
Priority to US07/124,423 priority patent/US4826780A/en
Priority to US07/295,380 priority patent/US5066602A/en
Publication of JPH0561775B2 publication Critical patent/JPH0561775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H10W10/031—
    • H10W10/30—
    • H10W15/00—
    • H10W15/01—

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57065925A 1982-04-19 1982-04-19 半導体集積回路装置 Granted JPS58182260A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57065925A JPS58182260A (ja) 1982-04-19 1982-04-19 半導体集積回路装置
DE8383103726T DE3361832D1 (en) 1982-04-19 1983-04-18 Semiconductor ic and method of making the same
EP83103726A EP0093304B1 (en) 1982-04-19 1983-04-18 Semiconductor ic and method of making the same
US07/124,423 US4826780A (en) 1982-04-19 1987-11-23 Method of making bipolar transistors
US07/295,380 US5066602A (en) 1982-04-19 1989-01-10 Method of making semiconductor ic including polar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57065925A JPS58182260A (ja) 1982-04-19 1982-04-19 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58182260A true JPS58182260A (ja) 1983-10-25
JPH0561775B2 JPH0561775B2 (enExample) 1993-09-07

Family

ID=13301030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57065925A Granted JPS58182260A (ja) 1982-04-19 1982-04-19 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58182260A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6259081A (ja) * 1985-09-09 1987-03-14 Ricoh Co Ltd 感熱記録材料

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515973A (enExample) * 1974-07-04 1976-01-19 Nippon Electric Co
JPS52104076A (en) * 1976-02-27 1977-09-01 Sony Corp Semiconductor unit
JPS53134374A (en) * 1977-04-28 1978-11-22 Sony Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515973A (enExample) * 1974-07-04 1976-01-19 Nippon Electric Co
JPS52104076A (en) * 1976-02-27 1977-09-01 Sony Corp Semiconductor unit
JPS53134374A (en) * 1977-04-28 1978-11-22 Sony Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6259081A (ja) * 1985-09-09 1987-03-14 Ricoh Co Ltd 感熱記録材料

Also Published As

Publication number Publication date
JPH0561775B2 (enExample) 1993-09-07

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