JPS58182246A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58182246A JPS58182246A JP57065858A JP6585882A JPS58182246A JP S58182246 A JPS58182246 A JP S58182246A JP 57065858 A JP57065858 A JP 57065858A JP 6585882 A JP6585882 A JP 6585882A JP S58182246 A JPS58182246 A JP S58182246A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- film
- heat treatment
- thin film
- sheet resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57065858A JPS58182246A (ja) | 1982-04-19 | 1982-04-19 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57065858A JPS58182246A (ja) | 1982-04-19 | 1982-04-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58182246A true JPS58182246A (ja) | 1983-10-25 |
| JPH0127581B2 JPH0127581B2 (enExample) | 1989-05-30 |
Family
ID=13299124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57065858A Granted JPS58182246A (ja) | 1982-04-19 | 1982-04-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58182246A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04237417A (ja) * | 1991-01-21 | 1992-08-25 | Kubota Corp | 根菜類の掘取機 |
| US5338693A (en) * | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
| US5831318A (en) * | 1996-07-25 | 1998-11-03 | International Rectifier Corporation | Radhard mosfet with thick gate oxide and deep channel region |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234193A (en) * | 1975-09-12 | 1977-03-15 | Hitachi Ltd | Turbine control system for eccs of nuclear reactor |
-
1982
- 1982-04-19 JP JP57065858A patent/JPS58182246A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234193A (en) * | 1975-09-12 | 1977-03-15 | Hitachi Ltd | Turbine control system for eccs of nuclear reactor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5338693A (en) * | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
| JPH04237417A (ja) * | 1991-01-21 | 1992-08-25 | Kubota Corp | 根菜類の掘取機 |
| US5831318A (en) * | 1996-07-25 | 1998-11-03 | International Rectifier Corporation | Radhard mosfet with thick gate oxide and deep channel region |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0127581B2 (enExample) | 1989-05-30 |
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