JPS5817445A - 露光方法 - Google Patents

露光方法

Info

Publication number
JPS5817445A
JPS5817445A JP56116189A JP11618981A JPS5817445A JP S5817445 A JPS5817445 A JP S5817445A JP 56116189 A JP56116189 A JP 56116189A JP 11618981 A JP11618981 A JP 11618981A JP S5817445 A JPS5817445 A JP S5817445A
Authority
JP
Japan
Prior art keywords
light source
mask
line
pattern
photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56116189A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0145626B2 (enExample
Inventor
Yoshio Yazaki
矢崎　好夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OAK SEISAKUSHO KK
Original Assignee
OAK SEISAKUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OAK SEISAKUSHO KK filed Critical OAK SEISAKUSHO KK
Priority to JP56116189A priority Critical patent/JPS5817445A/ja
Publication of JPS5817445A publication Critical patent/JPS5817445A/ja
Publication of JPH0145626B2 publication Critical patent/JPH0145626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP56116189A 1981-07-24 1981-07-24 露光方法 Granted JPS5817445A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56116189A JPS5817445A (ja) 1981-07-24 1981-07-24 露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56116189A JPS5817445A (ja) 1981-07-24 1981-07-24 露光方法

Publications (2)

Publication Number Publication Date
JPS5817445A true JPS5817445A (ja) 1983-02-01
JPH0145626B2 JPH0145626B2 (enExample) 1989-10-04

Family

ID=14681025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56116189A Granted JPS5817445A (ja) 1981-07-24 1981-07-24 露光方法

Country Status (1)

Country Link
JP (1) JPS5817445A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064353A (ja) * 1983-09-20 1985-04-12 Ushio Inc 放電灯の照射方法
JPH0196656A (ja) * 1987-10-09 1989-04-14 Omron Tateisi Electron Co 荷電ビーム露光装置
JP2008129558A (ja) * 2006-11-27 2008-06-05 Keio Gijuku 露光光源として光源アレイを用いた曲面製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064353A (ja) * 1983-09-20 1985-04-12 Ushio Inc 放電灯の照射方法
JPH0196656A (ja) * 1987-10-09 1989-04-14 Omron Tateisi Electron Co 荷電ビーム露光装置
JP2008129558A (ja) * 2006-11-27 2008-06-05 Keio Gijuku 露光光源として光源アレイを用いた曲面製造方法

Also Published As

Publication number Publication date
JPH0145626B2 (enExample) 1989-10-04

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