JPS58171814A - 半導体気相成長装置 - Google Patents

半導体気相成長装置

Info

Publication number
JPS58171814A
JPS58171814A JP5403782A JP5403782A JPS58171814A JP S58171814 A JPS58171814 A JP S58171814A JP 5403782 A JP5403782 A JP 5403782A JP 5403782 A JP5403782 A JP 5403782A JP S58171814 A JPS58171814 A JP S58171814A
Authority
JP
Japan
Prior art keywords
cover
reaction gas
nozzle
gas introduction
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5403782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0412020B2 (https=
Inventor
Kichizo Komiyama
吉三 小宮山
Kotei Iwata
岩田　公弟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP5403782A priority Critical patent/JPS58171814A/ja
Publication of JPS58171814A publication Critical patent/JPS58171814A/ja
Publication of JPH0412020B2 publication Critical patent/JPH0412020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP5403782A 1982-04-01 1982-04-01 半導体気相成長装置 Granted JPS58171814A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5403782A JPS58171814A (ja) 1982-04-01 1982-04-01 半導体気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5403782A JPS58171814A (ja) 1982-04-01 1982-04-01 半導体気相成長装置

Publications (2)

Publication Number Publication Date
JPS58171814A true JPS58171814A (ja) 1983-10-08
JPH0412020B2 JPH0412020B2 (https=) 1992-03-03

Family

ID=12959387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5403782A Granted JPS58171814A (ja) 1982-04-01 1982-04-01 半導体気相成長装置

Country Status (1)

Country Link
JP (1) JPS58171814A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102277561A (zh) * 2010-06-14 2011-12-14 硅绝缘体技术有限公司 用于多个基板的气体处理的系统和方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102277561A (zh) * 2010-06-14 2011-12-14 硅绝缘体技术有限公司 用于多个基板的气体处理的系统和方法

Also Published As

Publication number Publication date
JPH0412020B2 (https=) 1992-03-03

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