JPH0412020B2 - - Google Patents
Info
- Publication number
- JPH0412020B2 JPH0412020B2 JP5403782A JP5403782A JPH0412020B2 JP H0412020 B2 JPH0412020 B2 JP H0412020B2 JP 5403782 A JP5403782 A JP 5403782A JP 5403782 A JP5403782 A JP 5403782A JP H0412020 B2 JPH0412020 B2 JP H0412020B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- nozzle
- reaction gas
- gas introduction
- height
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012495 reaction gas Substances 0.000 claims description 22
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000002265 prevention Effects 0.000 description 2
- 241000282472 Canis lupus familiaris Species 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5403782A JPS58171814A (ja) | 1982-04-01 | 1982-04-01 | 半導体気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5403782A JPS58171814A (ja) | 1982-04-01 | 1982-04-01 | 半導体気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58171814A JPS58171814A (ja) | 1983-10-08 |
| JPH0412020B2 true JPH0412020B2 (https=) | 1992-03-03 |
Family
ID=12959387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5403782A Granted JPS58171814A (ja) | 1982-04-01 | 1982-04-01 | 半導体気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58171814A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011007735A1 (de) * | 2010-06-14 | 2011-12-15 | S.O.I. Tec Silicon On Insulator Technologies | Systeme und Verfahren zur Gasbehandlung einer Anzahl von Substraten |
-
1982
- 1982-04-01 JP JP5403782A patent/JPS58171814A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58171814A (ja) | 1983-10-08 |
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