JPS58170075A - 背面リフレクタを備えた光起電力デバイス - Google Patents

背面リフレクタを備えた光起電力デバイス

Info

Publication number
JPS58170075A
JPS58170075A JP58045837A JP4583783A JPS58170075A JP S58170075 A JPS58170075 A JP S58170075A JP 58045837 A JP58045837 A JP 58045837A JP 4583783 A JP4583783 A JP 4583783A JP S58170075 A JPS58170075 A JP S58170075A
Authority
JP
Japan
Prior art keywords
further characterized
layer
oxide
transparent
highly reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58045837A
Other languages
English (en)
Japanese (ja)
Inventor
ビンセント・カネラ
デ−ビツド・デイ−・オ−ルレツド
ラルフ・モ−ル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS58170075A publication Critical patent/JPS58170075A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP58045837A 1982-03-18 1983-03-18 背面リフレクタを備えた光起電力デバイス Pending JPS58170075A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18
US359371 1994-12-20

Publications (1)

Publication Number Publication Date
JPS58170075A true JPS58170075A (ja) 1983-10-06

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58045837A Pending JPS58170075A (ja) 1982-03-18 1983-03-18 背面リフレクタを備えた光起電力デバイス

Country Status (15)

Country Link
JP (1) JPS58170075A (Direct)
AU (1) AU540909B2 (Direct)
BR (1) BR8301160A (Direct)
CA (1) CA1245330A (Direct)
DE (1) DE3308598A1 (Direct)
FR (1) FR2523768B1 (Direct)
GB (1) GB2116775B (Direct)
IE (1) IE54573B1 (Direct)
IL (1) IL67926A (Direct)
IN (1) IN161241B (Direct)
IT (1) IT1160506B (Direct)
MX (1) MX153416A (Direct)
NL (1) NL8300925A (Direct)
SE (1) SE457300B (Direct)
ZA (1) ZA831342B (Direct)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171870A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPH0273672A (ja) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd 薄膜光電変換素子
JPH0677510A (ja) * 1992-08-24 1994-03-18 Canon Inc 光起電力素子

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector
DE3502218A1 (de) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fuer photovoltaische solargeneratoren verwendbare solarzelle
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
JPS62259480A (ja) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH01304786A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 光発電素子
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
EP0734075B1 (en) * 1994-10-06 2009-06-17 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Thin film solar cell
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120394A (en) * 1977-03-28 1978-10-20 Rca Corp Photovoltaic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120394A (en) * 1977-03-28 1978-10-20 Rca Corp Photovoltaic device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171870A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPH0273672A (ja) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd 薄膜光電変換素子
JPH0677510A (ja) * 1992-08-24 1994-03-18 Canon Inc 光起電力素子

Also Published As

Publication number Publication date
FR2523768A1 (fr) 1983-09-23
DE3308598A1 (de) 1983-09-22
IL67926A (en) 1986-04-29
MX153416A (es) 1986-10-07
IT8319923A0 (it) 1983-03-04
AU1241583A (en) 1984-09-20
ZA831342B (en) 1983-11-30
GB8306327D0 (en) 1983-04-13
IE54573B1 (en) 1989-11-22
BR8301160A (pt) 1983-11-22
NL8300925A (nl) 1983-10-17
IT1160506B (it) 1987-03-11
SE8301366L (sv) 1983-09-19
IL67926A0 (en) 1983-06-15
IE830502L (en) 1983-09-18
AU540909B2 (en) 1984-12-06
FR2523768B1 (fr) 1991-03-29
SE457300B (sv) 1988-12-12
IN161241B (Direct) 1987-10-31
SE8301366D0 (sv) 1983-03-14
GB2116775A (en) 1983-09-28
CA1245330A (en) 1988-11-22
GB2116775B (en) 1986-07-30

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