JPS58170015A - 電子ビ−ム露光方法 - Google Patents
電子ビ−ム露光方法Info
- Publication number
- JPS58170015A JPS58170015A JP5298282A JP5298282A JPS58170015A JP S58170015 A JPS58170015 A JP S58170015A JP 5298282 A JP5298282 A JP 5298282A JP 5298282 A JP5298282 A JP 5298282A JP S58170015 A JPS58170015 A JP S58170015A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- size
- irradiation
- electron beam
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5298282A JPS58170015A (ja) | 1982-03-31 | 1982-03-31 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5298282A JPS58170015A (ja) | 1982-03-31 | 1982-03-31 | 電子ビ−ム露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58170015A true JPS58170015A (ja) | 1983-10-06 |
JPH0547969B2 JPH0547969B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Family
ID=12930106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5298282A Granted JPS58170015A (ja) | 1982-03-31 | 1982-03-31 | 電子ビ−ム露光方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58170015A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02186620A (ja) * | 1989-01-13 | 1990-07-20 | Toshiba Corp | 電子ビーム描画によるパターン形成方法 |
JP2013207045A (ja) * | 2012-03-28 | 2013-10-07 | Toppan Printing Co Ltd | パターン描画方法およびそれを用いるパターン描画装置 |
-
1982
- 1982-03-31 JP JP5298282A patent/JPS58170015A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02186620A (ja) * | 1989-01-13 | 1990-07-20 | Toshiba Corp | 電子ビーム描画によるパターン形成方法 |
JP2013207045A (ja) * | 2012-03-28 | 2013-10-07 | Toppan Printing Co Ltd | パターン描画方法およびそれを用いるパターン描画装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0547969B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS599922A (ja) | 露光装置 | |
US4298803A (en) | Process and apparatus for making fine-scale patterns | |
US4717644A (en) | Hybrid electron beam and optical lithography method | |
JPS59921A (ja) | 電子ビ−ムリソグラフイにおける近接効果の補正方法 | |
KR20220101689A (ko) | 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치 | |
JPH09199389A (ja) | 電子ビーム描画方法 | |
JPS594017A (ja) | 電子ビ−ム露光方法 | |
JPS58170015A (ja) | 電子ビ−ム露光方法 | |
JP2000340492A (ja) | 電子線露光用マスクとそれを用いた半導体装置製造方法 | |
CN111913361B (zh) | 带电粒子束描绘方法以及带电粒子束描绘装置 | |
JP3393412B2 (ja) | 露光方法及び露光装置 | |
JP2907527B2 (ja) | 荷電粒子ビーム露光装置および露光方法 | |
JPS5556629A (en) | Pattern forming method | |
JPS59198720A (ja) | 電子ビ−ム露光方法 | |
JPH06120102A (ja) | 露光方法及び露光装置 | |
JP2004111798A (ja) | 荷電粒子ビーム露光方法 | |
JPS58114429A (ja) | 電子ビ−ム露光方法 | |
JPH02218115A (ja) | パターン形成方法 | |
JPS61191027A (ja) | 電子ビ−ム露光方法 | |
JPS6157697B2 (enrdf_load_stackoverflow) | ||
JPS62133456A (ja) | レジストパタ−ン形成方法 | |
JPH06140309A (ja) | 電子ビーム露光方法 | |
TW575906B (en) | Method for reducing charge accumulating effect during measurement and exposure | |
JPS6041223A (ja) | 電子ビ−ム露光方法 | |
JP2794116B2 (ja) | 電子ビーム露光方法 |