JPS58170015A - 電子ビ−ム露光方法 - Google Patents

電子ビ−ム露光方法

Info

Publication number
JPS58170015A
JPS58170015A JP5298282A JP5298282A JPS58170015A JP S58170015 A JPS58170015 A JP S58170015A JP 5298282 A JP5298282 A JP 5298282A JP 5298282 A JP5298282 A JP 5298282A JP S58170015 A JPS58170015 A JP S58170015A
Authority
JP
Japan
Prior art keywords
pattern
size
irradiation
electron beam
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5298282A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547969B2 (enrdf_load_stackoverflow
Inventor
Yasuhide Machida
町田 泰秀
Shigeru Furuya
茂 古谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5298282A priority Critical patent/JPS58170015A/ja
Publication of JPS58170015A publication Critical patent/JPS58170015A/ja
Publication of JPH0547969B2 publication Critical patent/JPH0547969B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP5298282A 1982-03-31 1982-03-31 電子ビ−ム露光方法 Granted JPS58170015A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5298282A JPS58170015A (ja) 1982-03-31 1982-03-31 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5298282A JPS58170015A (ja) 1982-03-31 1982-03-31 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS58170015A true JPS58170015A (ja) 1983-10-06
JPH0547969B2 JPH0547969B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=12930106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5298282A Granted JPS58170015A (ja) 1982-03-31 1982-03-31 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS58170015A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02186620A (ja) * 1989-01-13 1990-07-20 Toshiba Corp 電子ビーム描画によるパターン形成方法
JP2013207045A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd パターン描画方法およびそれを用いるパターン描画装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02186620A (ja) * 1989-01-13 1990-07-20 Toshiba Corp 電子ビーム描画によるパターン形成方法
JP2013207045A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd パターン描画方法およびそれを用いるパターン描画装置

Also Published As

Publication number Publication date
JPH0547969B2 (enrdf_load_stackoverflow) 1993-07-20

Similar Documents

Publication Publication Date Title
JPS599922A (ja) 露光装置
US4298803A (en) Process and apparatus for making fine-scale patterns
US4717644A (en) Hybrid electron beam and optical lithography method
JPS59921A (ja) 電子ビ−ムリソグラフイにおける近接効果の補正方法
KR20220101689A (ko) 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치
JPH09199389A (ja) 電子ビーム描画方法
JPS594017A (ja) 電子ビ−ム露光方法
JPS58170015A (ja) 電子ビ−ム露光方法
JP2000340492A (ja) 電子線露光用マスクとそれを用いた半導体装置製造方法
CN111913361B (zh) 带电粒子束描绘方法以及带电粒子束描绘装置
JP3393412B2 (ja) 露光方法及び露光装置
JP2907527B2 (ja) 荷電粒子ビーム露光装置および露光方法
JPS5556629A (en) Pattern forming method
JPS59198720A (ja) 電子ビ−ム露光方法
JPH06120102A (ja) 露光方法及び露光装置
JP2004111798A (ja) 荷電粒子ビーム露光方法
JPS58114429A (ja) 電子ビ−ム露光方法
JPH02218115A (ja) パターン形成方法
JPS61191027A (ja) 電子ビ−ム露光方法
JPS6157697B2 (enrdf_load_stackoverflow)
JPS62133456A (ja) レジストパタ−ン形成方法
JPH06140309A (ja) 電子ビーム露光方法
TW575906B (en) Method for reducing charge accumulating effect during measurement and exposure
JPS6041223A (ja) 電子ビ−ム露光方法
JP2794116B2 (ja) 電子ビーム露光方法