JPH0547969B2 - - Google Patents
Info
- Publication number
- JPH0547969B2 JPH0547969B2 JP5298282A JP5298282A JPH0547969B2 JP H0547969 B2 JPH0547969 B2 JP H0547969B2 JP 5298282 A JP5298282 A JP 5298282A JP 5298282 A JP5298282 A JP 5298282A JP H0547969 B2 JPH0547969 B2 JP H0547969B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- electron beam
- amount
- residual film
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5298282A JPS58170015A (ja) | 1982-03-31 | 1982-03-31 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5298282A JPS58170015A (ja) | 1982-03-31 | 1982-03-31 | 電子ビ−ム露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58170015A JPS58170015A (ja) | 1983-10-06 |
JPH0547969B2 true JPH0547969B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Family
ID=12930106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5298282A Granted JPS58170015A (ja) | 1982-03-31 | 1982-03-31 | 電子ビ−ム露光方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58170015A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748472B2 (ja) * | 1989-01-13 | 1995-05-24 | 株式会社東芝 | 電子ビーム描画によるパターン形成方法 |
JP2013207045A (ja) * | 2012-03-28 | 2013-10-07 | Toppan Printing Co Ltd | パターン描画方法およびそれを用いるパターン描画装置 |
-
1982
- 1982-03-31 JP JP5298282A patent/JPS58170015A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58170015A (ja) | 1983-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4298803A (en) | Process and apparatus for making fine-scale patterns | |
US6627366B2 (en) | Electron beam exposure method having good linearity with respect to producing fine patterns | |
JPS59921A (ja) | 電子ビ−ムリソグラフイにおける近接効果の補正方法 | |
JPS599922A (ja) | 露光装置 | |
US4717644A (en) | Hybrid electron beam and optical lithography method | |
US2748288A (en) | Electron photography plate construction | |
US4746587A (en) | Electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask | |
KR19980080950A (ko) | 전자빔을 사용하는 패턴 노광 방법 | |
JPS594017A (ja) | 電子ビ−ム露光方法 | |
JPH0547969B2 (enrdf_load_stackoverflow) | ||
JPS6399526A (ja) | 電子ビーム近接効果補償方法 | |
JPH0653106A (ja) | 微細レジストパターンの形成方法 | |
JPS5819127B2 (ja) | 微細パタ−ン形成方法 | |
JP3393412B2 (ja) | 露光方法及び露光装置 | |
JPH02218115A (ja) | パターン形成方法 | |
JPS6157697B2 (enrdf_load_stackoverflow) | ||
JPS5868928A (ja) | 電子線露光方法 | |
JPS5580318A (en) | Electron-beam exposure | |
JPH02264261A (ja) | レジストパターンの形成方法 | |
JP2835109B2 (ja) | 荷電ビーム描画方法 | |
JPS6041223A (ja) | 電子ビ−ム露光方法 | |
JPH0147009B2 (enrdf_load_stackoverflow) | ||
JPH03127818A (ja) | レティクルの製造方法 | |
JPH0297950A (ja) | レジストパターン形成方法 | |
JPS63155724A (ja) | 荷電粒子線描画方法 |