JPS58167429A - ビスマスーゲルマニウム系酸化物の製法 - Google Patents
ビスマスーゲルマニウム系酸化物の製法Info
- Publication number
- JPS58167429A JPS58167429A JP57049917A JP4991782A JPS58167429A JP S58167429 A JPS58167429 A JP S58167429A JP 57049917 A JP57049917 A JP 57049917A JP 4991782 A JP4991782 A JP 4991782A JP S58167429 A JPS58167429 A JP S58167429A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- amorphous material
- temperature
- mixture
- bismuth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 44
- CWCCJSTUDNHIKB-UHFFFAOYSA-N $l^{2}-bismuthanylidenegermanium Chemical compound [Bi]=[Ge] CWCCJSTUDNHIKB-UHFFFAOYSA-N 0.000 title description 2
- 239000000203 mixture Substances 0.000 claims abstract description 32
- 238000002844 melting Methods 0.000 claims abstract description 19
- 230000008018 melting Effects 0.000 claims abstract description 19
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 16
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000155 melt Substances 0.000 abstract description 22
- 238000010438 heat treatment Methods 0.000 abstract description 12
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 3
- 230000003197 catalytic effect Effects 0.000 abstract description 3
- 238000010791 quenching Methods 0.000 abstract description 3
- 230000000171 quenching effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000007664 blowing Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004455 differential thermal analysis Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007712 rapid solidification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001327708 Coriaria sarmentosa Species 0.000 description 1
- 241000277331 Salmonidae Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- GDDLRWGXGVZJJU-UHFFFAOYSA-N [He].O.[Ar] Chemical compound [He].O.[Ar] GDDLRWGXGVZJJU-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000012844 infrared spectroscopy analysis Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57049917A JPS58167429A (ja) | 1982-03-26 | 1982-03-26 | ビスマスーゲルマニウム系酸化物の製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57049917A JPS58167429A (ja) | 1982-03-26 | 1982-03-26 | ビスマスーゲルマニウム系酸化物の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167429A true JPS58167429A (ja) | 1983-10-03 |
| JPH0250049B2 JPH0250049B2 (enrdf_load_stackoverflow) | 1990-11-01 |
Family
ID=12844356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57049917A Granted JPS58167429A (ja) | 1982-03-26 | 1982-03-26 | ビスマスーゲルマニウム系酸化物の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58167429A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011046033A1 (ja) * | 2009-10-13 | 2011-04-21 | Jx日鉱日石金属株式会社 | Ｂｉ－Ｇｅ－Ｏ系焼結体スパッタリングターゲット及びその製造方法並びに光記録媒体 |
| WO2011062021A1 (ja) * | 2009-11-20 | 2011-05-26 | Jx日鉱日石金属株式会社 | Ｂｉ－Ｇｅ－Ｏ系焼結体スパッタリングターゲット及びその製造方法並びに光記録媒体 |
| RU2636090C1 (ru) * | 2017-03-31 | 2017-11-20 | Федеральное государственное автономное образовательное учреждение высшего образования "Сибирский федеральный университет" | СПОСОБ ПОЛУЧЕНИЯ ГЕРМАНАТА ВИСМУТА Bi2GeO5 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51109299A (ja) * | 1975-03-20 | 1976-09-28 | Matsushita Electric Ind Co Ltd | Gerumaniumusanbisumasuhakumakuno seizohoho |
| JPS5313200A (en) * | 1976-07-21 | 1978-02-06 | Matsushita Electric Ind Co Ltd | Production method of piezo-electric thin film |
-
1982
- 1982-03-26 JP JP57049917A patent/JPS58167429A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51109299A (ja) * | 1975-03-20 | 1976-09-28 | Matsushita Electric Ind Co Ltd | Gerumaniumusanbisumasuhakumakuno seizohoho |
| JPS5313200A (en) * | 1976-07-21 | 1978-02-06 | Matsushita Electric Ind Co Ltd | Production method of piezo-electric thin film |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011046033A1 (ja) * | 2009-10-13 | 2011-04-21 | Jx日鉱日石金属株式会社 | Ｂｉ－Ｇｅ－Ｏ系焼結体スパッタリングターゲット及びその製造方法並びに光記録媒体 |
| CN102575339A (zh) * | 2009-10-13 | 2012-07-11 | 吉坤日矿日石金属株式会社 | Bi-Ge-O型烧结体溅射靶及其制造方法以及光记录介质 |
| JP5259741B2 (ja) * | 2009-10-13 | 2013-08-07 | Ｊｘ日鉱日石金属株式会社 | Ｂｉ−Ｇｅ−Ｏ系焼結体スパッタリングターゲット及びその製造方法並びに光記録媒体 |
| WO2011062021A1 (ja) * | 2009-11-20 | 2011-05-26 | Jx日鉱日石金属株式会社 | Ｂｉ－Ｇｅ－Ｏ系焼結体スパッタリングターゲット及びその製造方法並びに光記録媒体 |
| CN102597303A (zh) * | 2009-11-20 | 2012-07-18 | 吉坤日矿日石金属株式会社 | Bi-Ge-O型烧结体溅射靶及其制造方法以及光记录介质 |
| JP5265710B2 (ja) * | 2009-11-20 | 2013-08-14 | Ｊｘ日鉱日石金属株式会社 | Ｂｉ−Ｇｅ−Ｏ系焼結体スパッタリングターゲット及びその製造方法並びに光記録媒体 |
| RU2636090C1 (ru) * | 2017-03-31 | 2017-11-20 | Федеральное государственное автономное образовательное учреждение высшего образования "Сибирский федеральный университет" | СПОСОБ ПОЛУЧЕНИЯ ГЕРМАНАТА ВИСМУТА Bi2GeO5 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0250049B2 (enrdf_load_stackoverflow) | 1990-11-01 |