JPS58157135A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS58157135A JPS58157135A JP57041273A JP4127382A JPS58157135A JP S58157135 A JPS58157135 A JP S58157135A JP 57041273 A JP57041273 A JP 57041273A JP 4127382 A JP4127382 A JP 4127382A JP S58157135 A JPS58157135 A JP S58157135A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- sensitive resin
- forming method
- pattern forming
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000005855 radiation Effects 0.000 claims abstract description 86
- 239000011347 resin Substances 0.000 claims abstract description 84
- 229920005989 resin Polymers 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000011161 development Methods 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 27
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 2
- 239000006121 base glass Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 230000018109 developmental process Effects 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 2
- 238000003079 width control Methods 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041273A JPS58157135A (ja) | 1982-03-15 | 1982-03-15 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041273A JPS58157135A (ja) | 1982-03-15 | 1982-03-15 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157135A true JPS58157135A (ja) | 1983-09-19 |
| JPH035653B2 JPH035653B2 (en, 2012) | 1991-01-28 |
Family
ID=12603828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57041273A Granted JPS58157135A (ja) | 1982-03-15 | 1982-03-15 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157135A (en, 2012) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100563242B1 (ko) * | 1999-12-02 | 2006-03-27 | 액셀리스 테크놀로지스, 인크. | 자외선(ｕｖ)에 의한 포토레지스트의 화학 개질법 |
| US8039399B2 (en) | 2008-10-09 | 2011-10-18 | Micron Technology, Inc. | Methods of forming patterns utilizing lithography and spacers |
| US8409457B2 (en) | 2008-08-29 | 2013-04-02 | Micron Technology, Inc. | Methods of forming a photoresist-comprising pattern on a substrate |
| US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
| US9653315B2 (en) | 2008-12-04 | 2017-05-16 | Micron Technology, Inc. | Methods of fabricating substrates |
| US9761457B2 (en) | 2006-07-10 | 2017-09-12 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
-
1982
- 1982-03-15 JP JP57041273A patent/JPS58157135A/ja active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100563242B1 (ko) * | 1999-12-02 | 2006-03-27 | 액셀리스 테크놀로지스, 인크. | 자외선(ｕｖ)에 의한 포토레지스트의 화학 개질법 |
| US9761457B2 (en) | 2006-07-10 | 2017-09-12 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10096483B2 (en) | 2006-07-10 | 2018-10-09 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10607844B2 (en) | 2006-07-10 | 2020-03-31 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US11335563B2 (en) | 2006-07-10 | 2022-05-17 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US11935756B2 (en) | 2006-07-10 | 2024-03-19 | Lodestar Licensing Group Llc | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
| US8409457B2 (en) | 2008-08-29 | 2013-04-02 | Micron Technology, Inc. | Methods of forming a photoresist-comprising pattern on a substrate |
| US8039399B2 (en) | 2008-10-09 | 2011-10-18 | Micron Technology, Inc. | Methods of forming patterns utilizing lithography and spacers |
| US9653315B2 (en) | 2008-12-04 | 2017-05-16 | Micron Technology, Inc. | Methods of fabricating substrates |
| US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH035653B2 (en, 2012) | 1991-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6015650A (en) | Method for forming micro patterns of semiconductor devices | |
| US5245470A (en) | Polarizing exposure apparatus using a polarizer and method for fabrication of a polarizing mask by using a polarizing exposure apparatus | |
| JPS58157135A (ja) | パタ−ン形成方法 | |
| JPS60500229A (ja) | 高反射率を有する基板パタ−ン用二層柴外レジストシステム | |
| JP2560773B2 (ja) | パターン形成方法 | |
| JPH0664337B2 (ja) | 半導体集積回路用ホトマスク | |
| JPS58218120A (ja) | パタ−ン形成方法 | |
| JPS59141230A (ja) | パタ−ン形成方法 | |
| US7078133B2 (en) | Photolithographic mask | |
| JPH0792605B2 (ja) | レジストパターン形成方法 | |
| JPS61209450A (ja) | ホトマスク | |
| TW200300961A (en) | Multiple photolithographic exposures with different clear patterns | |
| JPS63220140A (ja) | パタ−ン形成方法 | |
| JPS5951527A (ja) | パタ−ン形成方法 | |
| JPS59155926A (ja) | パタ−ン形成方法 | |
| JPS58132926A (ja) | パタ−ン形成方法 | |
| JPH01238659A (ja) | パターン形成方法 | |
| JPS59155930A (ja) | 微細パタ−ンの形成方法 | |
| CN118092077A (zh) | 在高na euv曝光的拼合区域引入明场成像的方法和系统 | |
| JPH0458245A (ja) | 微細パターン形成用マスク及びその製造方法 | |
| JPS5984428A (ja) | パタ−ン形成方法 | |
| JPS59155928A (ja) | 半導体装置の製造方法 | |
| JPS58153932A (ja) | 写真蝕刻方法 | |
| JPH028853A (ja) | パターン形成方法 | |
| JPS63157421A (ja) | レジストパタ−ン形成方法 |