JPS58157135A - Forming method for pattern - Google Patents
Forming method for patternInfo
- Publication number
- JPS58157135A JPS58157135A JP57041273A JP4127382A JPS58157135A JP S58157135 A JPS58157135 A JP S58157135A JP 57041273 A JP57041273 A JP 57041273A JP 4127382 A JP4127382 A JP 4127382A JP S58157135 A JPS58157135 A JP S58157135A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- sensitive resin
- forming method
- pattern forming
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000005855 radiation Effects 0.000 claims abstract description 86
- 239000011347 resin Substances 0.000 claims abstract description 84
- 229920005989 resin Polymers 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000011161 development Methods 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 27
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 2
- 239000006121 base glass Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 230000018109 developmental process Effects 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 2
- 238000003079 width control Methods 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はパターン形成方法とくに放射線感応性樹脂を用
いたパターン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pattern forming method, and particularly to a pattern forming method using a radiation-sensitive resin.
集積回路の高集積化、高密度化は従来のりソグラフィ技
術の進歩により増大してきた。その最小線幅も程１μｍ
前後となってきており、この加工線幅を達成するには、
高開口レンズを有した縮少投影法により紫外線露光する
方法、基板上に直接描画する電子ビーム露光法、Ｘ線を
用いたグロキシミティ露光法があげられる。しかし、い
ずれの方法もスループットを犠牲にすることなく良好な
線幅制御と高解像度及び良好な段差部のカバレジを同時
に得ることは困難である。特に実際の集積回路上におい
ては必然的に凹凸が発生し、放射線感応性樹脂を塗布し
た後では、凹凸部における放射線感応性樹脂膜の膜厚差
が発生し、良好な線幅制御が不可能となる。BACKGROUND OF THE INVENTION The integration and density of integrated circuits has increased due to advances in conventional lithography technology. The minimum line width is about 1μm
In order to achieve this processing line width,
Examples include a method of exposing to ultraviolet light using a reduction projection method using a high aperture lens, an electron beam exposure method of directly drawing on a substrate, and a gloximity exposure method using X-rays. However, with either method, it is difficult to simultaneously obtain good line width control, high resolution, and good step coverage without sacrificing throughput. In particular, unevenness inevitably occurs on actual integrated circuits, and after coating the radiation-sensitive resin, differences in the thickness of the radiation-sensitive resin film occur at the uneven parts, making it impossible to control the line width well. becomes.
これについて第１図を用いて説明する。第１図は従来法
により、単層放射線感応性樹脂膜を段差部へ塗布し、そ
の段差部に対して交叉してパターン形成上を行なった状
態を示したものである。第１図ｔａ＋は基板１上に段差
物２が形成されておりその上に放射線感応性樹脂３が塗
布された状態の断面図である。この場合、段差物２がな
い平坦な基板１上の放射線感応性樹脂３の膜厚をｔＲ４
に塗布した時、段差物２上の放射線感応性樹脂３の膜厚
は、放射線感応性樹脂自身の粘性と塗布時の回転数によ
り膜厚は’Ｒ２に決定される。この時”Ｒ４＝’Ｒ２に
すること、つまり凹凸部での放射線感応性樹脂膜の膜厚
差を階無にすることは物理的に不可能である。このよう
に”Ｒ４’＜ ’Ｒ２の膜厚においてパターンを形成し
た場合の平面を第１図ｆｂ）に示す。This will be explained using FIG. 1. FIG. 1 shows a state in which a single-layer radiation-sensitive resin film is applied to a stepped portion by a conventional method, and a pattern is formed across the stepped portion. FIG. 1 ta+ is a sectional view of a state in which a step 2 is formed on a substrate 1 and a radiation-sensitive resin 3 is applied thereon. In this case, the film thickness of the radiation-sensitive resin 3 on the flat substrate 1 without the step 2 is tR4.
When applied, the film thickness of the radiation-sensitive resin 3 on the stepped object 2 is determined to be 'R2' depending on the viscosity of the radiation-sensitive resin itself and the number of revolutions during application. At this time, it is physically impossible to make "R4='R2," that is, to make the difference in the thickness of the radiation-sensitive resin film at the uneven portions negligible.In this way, "R4"<'R2. FIG. 1 fb) shows a plane when a pattern is formed in the film thickness.
これは、段差物パターン２に対して直角に交叉して放射
線感応性樹脂パターン３を形成するとパターン３の膜厚
’Ｒ１位置ではパターン幅が１１と決定されると、膜厚
ｔＲ２位置では’Ｒ４＞ ｔＲ２という関係があるため
パターン幅は、１２と、１１〉ｌ！２トなシ段差部にお
けるパターン寸法変換差が発生してしまう。つまり、非
常に微細パターンになると良好な線幅制御が得られず、
更に段差物２のエツジ部２ａでは実質上、平坦部の膜厚
’Ｉｈよシ厚くなるため、解像度が低下する。This means that when the radiation-sensitive resin pattern 3 is formed perpendicularly to the step pattern 2, the pattern width is determined to be 11 at the film thickness 'R1 position of the pattern 3, and 'R4' at the film thickness tR2 position. > Since there is a relationship tR2, the pattern width is 12 and 11>l! A difference in pattern size conversion occurs at the two step portions. In other words, when it comes to extremely fine patterns, good line width control cannot be obtained.
Furthermore, the edge portion 2a of the stepped object 2 is substantially thicker than the film thickness 'Ih of the flat portion, resulting in a decrease in resolution.
一般に解像度は、放射線感応性樹脂の膜厚が薄くなれば
なるほど向上する。これは放射線自身の波長によって微
細間隙になると干渉９回折現像のため入射するエネルギ
ーは減衰してしまうためである。Generally, the resolution improves as the film thickness of the radiation-sensitive resin becomes thinner. This is because when a fine gap is created due to the wavelength of the radiation itself, the incident energy is attenuated due to interference 9 diffraction development.
第２図は段差物２を有する基板１上に放射線感応性樹脂
３を塗布した断面図である。この場合、第１図［ａｌの
放射線感応性樹脂膜厚のｔＲｌより厚く塗布した状態を
示す。ｔＨ１’に厚く塗布した場合では、図示されるよ
うに放射線感応性樹脂膜３上の表面は平坦となる。やは
りこの場合も良好な凹凸部でのカバレジを得ることは出
来ないが、段差物２の膜厚ｔＳより基板１の平坦上の放
射線感応性樹脂３の膜厚ｔＲ１’をたとえば倍以上に厚
く塗布した場合は、’Ｒ１’と段差物２上の放射線感応
性樹脂３の膜厚’Ｒ２’は、はぼｔＲ１′＝ｔＲ２’と
なり段差物２の膜厚ｔ３に影響されなくなる。FIG. 2 is a cross-sectional view of a substrate 1 having a step 2 and a radiation-sensitive resin 3 coated thereon. In this case, FIG. 1 shows a state where the coating is thicker than the radiation-sensitive resin film thickness tRl of [al]. When it is applied thickly at tH1', the surface of the radiation-sensitive resin film 3 becomes flat as shown in the figure. In this case as well, it is not possible to obtain good coverage of uneven parts, but the film thickness tR1' of the radiation-sensitive resin 3 on the flat surface of the substrate 1 is coated to be, for example, more than twice as thick as the film thickness tS of the stepped object 2. In this case, 'R1' and the film thickness 'R2' of the radiation sensitive resin 3 on the stepped object 2 become approximately tR1'=tR2' and are not affected by the film thickness t3 of the stepped object 2.
しかし、前述したように放射線感応性樹脂は膜厚が厚く
なると逆に解像度が低下するため、ただ単に放射線感応
性樹脂を厚く塗布し段差を軽減しようとするのはパター
ン形成上好ましくない。同時にこれを実証するだめ第３
図に放射線感応性樹脂膜厚ｔＨを変化させた場合の放射
線感応性樹脂ライン幅＋ｌ）と現像時間（ｔｄ）特性を
示した。この特性曲線は単一波長で縮小屈折光学系を介
して、ジアジド系紫外線感光性樹脂に紫外線照射し、そ
の照射エネルギーを一定とし現像時間のみを可変とした
ときのライン幅変動の理論曲線（シュミレーション結果
）である。つまシライン幅［Ｊ）においてｔｌ）がＬに
なるだめの現像時間ｔｄは放射線感応性樹脂膜厚ｔＵが
厚くなればなる程大きくなる。However, as described above, as the film thickness of the radiation-sensitive resin increases, the resolution decreases, so it is not preferable in terms of pattern formation to simply apply a thick layer of the radiation-sensitive resin to reduce the level difference. At the same time, we must prove this.
The figure shows the radiation-sensitive resin line width +l) and development time (td) characteristics when the radiation-sensitive resin film thickness tH is changed. This characteristic curve is a theoretical curve (simulation) of line width variation when a diazide-based ultraviolet-sensitive resin is irradiated with ultraviolet light at a single wavelength through a reduction refractive optical system, the irradiation energy is constant, and only the development time is variable. result). The development time td required for tl) to become L in the line width [J) increases as the radiation-sensitive resin film thickness tU increases.
つまりｔＨが厚くなると放射線の照射エネルギー量を増
すことにより、”Ｒが薄い場合と同等なライン幅（１）
が得られる訳であるため、第１図ｔａ＞ 、 （ｂ）第
２図に示すように段差がある上に放射線感応性樹脂膜を
塗布した場合には前述のようにパターン幅変動が発生す
ることになる。In other words, when tH becomes thicker, by increasing the amount of radiation irradiation energy, the line width (1) is the same as when R is thinner.
Therefore, if a radiation-sensitive resin film is applied on a step as shown in Fig. 1, (b) Fig. 2, pattern width fluctuations will occur as described above. It turns out.
そこで、従来のように単層で放射線感応性樹脂を凹凸を
有する実際の集積回路上にパターン形成する際に障害と
なる、パターン寸法変換差とそれに伴なう解像度の低下
を防ぐため、本発明者らは放射線感応性樹脂の膜厚を厚
く塗布しながらも、段差部におけるパターン寸法変換差
を少なくしかつ解像度の低下を防ぐために、放射線感応
性樹脂を２層に塗布することにより、厚く塗布しながら
かつ最初に塗布した放射線感応性樹脂膜全面に放射性感
応させ、更に第２の放射線感応性樹脂膜を塗布する際に
、第１の放射線感応性樹脂膜との溶解混合を防ぐため第
１の放射線感応性樹脂膜表面に第２の放射線感応性樹脂
を分離するだめの処理を施こし、最後に第１．第２の放
射線感応性樹脂膜を同時にパターンを形成しようとする
パターン形成方法を提供しようとするものである・本発
明の実施例を第４図を用いて詳細に説明する。まず第１
の実施例をポジ型放射線感応性樹脂の特にポジ型紫外線
感光性樹脂を例にとって説明する。基板４上にポジ型紫
外線感光性樹脂（以後、ポジＵＶフォトレジスト）５を
塗布し、ソフトベーキングを施こす（第４図ａ）。次に
ポジＵＶフォトレジスト６にＵＶ光６を全面に照射する
ことによって感光したポジＵＶフォトレジスト６ａにす
る（第４図ｂ）。そして感光したポジＵＶフォトレジス
ト６ａの表面にフッ素系ガスプラズマ７によってポジＵ
Ｖフォトレジスト６ａ表面に店先反応に変化が生じない
程度に変質層６ｂを施こす（第４図Ｃ）。Therefore, in order to prevent the difference in pattern dimension conversion and the accompanying decrease in resolution, which are obstacles when patterning a radiation-sensitive resin in a single layer on an actual integrated circuit having unevenness as in the past, the present invention was developed. While applying a thick layer of radiation-sensitive resin, they applied it thickly by applying two layers of radiation-sensitive resin in order to reduce the difference in pattern dimension conversion at the step part and prevent a decrease in resolution. At the same time, when the entire surface of the first radiation-sensitive resin film is radiosensitized and the second radiation-sensitive resin film is applied, the first radiation-sensitive resin film is coated to prevent dissolution and mixing with the first radiation-sensitive resin film. A treatment to separate the second radiation-sensitive resin is applied to the surface of the radiation-sensitive resin film of the first radiation-sensitive resin film. The present invention aims to provide a pattern forming method for simultaneously forming a pattern on the second radiation-sensitive resin film.An embodiment of the present invention will be described in detail with reference to FIG. First of all
Examples will be explained by taking as an example a positive type radiation-sensitive resin, particularly a positive type ultraviolet-sensitive resin. A positive UV-sensitive resin (hereinafter referred to as positive UV photoresist) 5 is applied onto the substrate 4, and soft baking is performed (FIG. 4a). Next, the entire surface of the positive UV photoresist 6 is irradiated with UV light 6 to form an exposed positive UV photoresist 6a (FIG. 4b). Then, the surface of the exposed positive UV photoresist 6a is exposed to a positive U by a fluorine-based gas plasma 7.
A degraded layer 6b is applied to the surface of the V photoresist 6a to such an extent that no change occurs in the shop front reaction (FIG. 4C).
次に第一層目のポジＵＶフォトレジスト６と同タイプの
第２のポジＵＶフォトレジスト８を第１のポジＵＶフォ
トレジストの変質層６ｂ上に塗布しベーキングを施こす
。この際、変質層５ｂが形成されているため、第１．第
２ΩポジＵＶフォトレジスト５，８における第２のポジ
ＵＶフォトレジスト８塗布時の溶解がなく完全に分離し
た形で積層形成が可能である（第４図ｄ）。Next, a second positive UV photoresist 8 of the same type as the first layer of positive UV photoresist 6 is applied onto the altered layer 6b of the first positive UV photoresist and baked. At this time, since the altered layer 5b is formed, the first. There is no dissolution in the second Ω positive UV photoresists 5 and 8 when the second positive UV photoresist 8 is applied, and it is possible to form a stack in a completely separated form (FIG. 4d).
次にパターンを有したマスク９によりクロム部１ｏ以外
に紫外線１１を用いて選択的に第２のポジＵＶフォトン
ジス）８ａ、第１のポジＵＶフォトンジス）５ａ、５ｂ
同時に照射する（第４図ｅ）。Next, using a mask 9 having a pattern, ultraviolet rays 11 are selectively applied to areas other than the chrome part 1o to selectively apply a second positive UV photon resist) 8a, and a first positive UV photon resist) 5a, 5b.
irradiate at the same time (Fig. 4e).
そして紫外線非照射部８ｂを除去し、紫外線照射部８ａ
、５ｂ、５ａを現像除去する（第４図ｆ）。Then, the ultraviolet non-irradiated portion 8b is removed, and the ultraviolet irradiated portion 8a is removed.
, 5b and 5a are developed and removed (FIG. 4f).
これら一連の工程をえて、レジスト厚く塗布しながらも
微細パターンをかつ段差部における寸法変換差を少なく
することができる。Through this series of steps, it is possible to form a fine pattern while applying a thick resist and to reduce the difference in dimension conversion at the stepped portion.
このことをもっと詳細に説明する。第５図に単層放射線
感応性樹脂（ポジ形）の照射特性（同図ａ）、本発明に
かかるパターン形成方法による２層放射線感応性樹脂の
照射特性（同図ｂ）を示した。This will be explained in more detail. FIG. 5 shows the irradiation characteristics of a single-layer radiation-sensitive resin (positive type) (FIG. 5a) and the irradiation characteristics of a two-layer radiation-sensitive resin formed by the pattern forming method according to the present invention (FIG. 5b).
第６図ｔａ＋は、第１の実施例で説明した第１層目のポ
ジＵＶフォトレジストのみの照射特性で第４図ｔａ＋に
示す膜厚ｔ１を厚くしていくと、完全に現像しうる露光
エネルギーＥＴは大きくなる。っまりｔｌ（Ｋｋ Ｉｉ
ニア ｋ （定数〕・・・・旧・・（１）式の関係
があることがわかる。FIG. 6 ta+ shows the irradiation characteristics of only the first layer of positive UV photoresist explained in the first example, and when the film thickness t1 shown in FIG. 4 ta+ is increased, the exposure can be completely developed. Energy ET becomes larger. Tmari tl (Kk Ii
Near k (constant)... Old... It can be seen that there is a relationship as shown in equation (1).
次に第６図ｔｂ）は、本発明にかかるパターン形成方法
による２層ポジＵＶフォトレジストの照射％性で第１層
、第２層膜厚（ｔ、十ｔ２）〔第４図参照〕を厚くして
も完全に現像しうる露光エネルギーは、はとんど変化量
がない。つまり、第１層目のポジ形ＵＶフォトレジスト
が感光しているため、選択性が高く、感度の低下がない
ことを証明している。このことは、レジスト厚の変動に
露光（照射）エネルギーが依存しない。つまり段差部に
おけるレジスト厚の変動にもがかわらず、パターン幅変
動率が少ないということである。Next, Fig. 6 tb) shows the irradiation percentage of the two-layer positive UV photoresist by the pattern forming method according to the present invention, and the film thicknesses of the first and second layers (t, t2) [see Fig. 4]. There is almost no change in the exposure energy required for complete development even if the thickness is increased. In other words, since the first layer of positive UV photoresist is exposed to light, the selectivity is high and it is proven that there is no decrease in sensitivity. This means that the exposure (irradiation) energy does not depend on variations in resist thickness. In other words, the pattern width variation rate is small despite variations in the resist thickness at the step portion.
第１の実゛施例（第４図参照）と第６図の照射特性の結
果、段差物パターン２上にパターニングしたパターン３
は、従来法による単層レジスト法によると寸法変換率は
第６図の斜線のごとくなるが、本発明によるパターン形
成法を用いると第６図の実線のごとく寸法変換率が少な
く、本発明者らの実験によると％以下に減少することが
可能であった。例えば、従来法で、段差（ｔｌ２） ｏ
、ｅｐｍで、レジスト厚（ｔＲｌ）を１．８μｍである
と寸法変換比（１２／１１×１ｏｏ ・・１呻・川・川
・・川・・［２１式）は６０％２本発明の第１の実施例
においてはレジスト厚（１１＋１２）を２．ｏｌｌｍで
、同様にｏ、ｅｐｍの段差基板上での寸法変換比は、８
０％と良好であった０
次に第２の実施例について第７図を用いて説明する。第
１の実施例において第１の放射線感応性樹脂表面処理工
程（第４図Ｃ）を、赤外線熱源１２を第１の放射線感応
性樹脂５ａの表面５ｃに照射することにより行い、熱変
質層５ｃを形成する工程をもつものである（第７図ａ）
。この時第１の放射線感応性樹脂６の表面熱変質層６Ｃ
は、第１の実施例と同様に、第２の放射線感応性樹脂を
完全に積層形成が可能となる。As a result of the irradiation characteristics shown in the first embodiment (see FIG. 4) and FIG. 6, the pattern 3 patterned on the step pattern 2
According to the conventional single-layer resist method, the dimensional conversion rate is as shown by the diagonal line in Figure 6, but when the pattern forming method according to the present invention is used, the dimensional conversion rate is small as shown by the solid line in Figure 6. According to the experiments conducted by et al., it was possible to reduce the amount to below %. For example, in the conventional method, the step (tl2) o
, epm, and the resist thickness (tRl) is 1.8 μm, the dimension conversion ratio (12/11×1oo...1 groan, river, river, river... [Formula 21]) is 60%2. In Example 1, the resist thickness (11+12) was set to 2. Similarly, the dimensional conversion ratio on the step board for ollm and epm is 8.
Next, a second example will be described using FIG. 7. In the first embodiment, the first radiation-sensitive resin surface treatment step (FIG. 4C) is performed by irradiating the surface 5c of the first radiation-sensitive resin 5a with an infrared heat source 12, and the thermally altered layer 5c is (Figure 7a)
. At this time, the surface thermally altered layer 6C of the first radiation-sensitive resin 6
Similarly to the first embodiment, it is possible to completely laminate the second radiation-sensitive resin.
次に第３の実施例として、第２の実施例における赤外線
熱源１２の代わりに高出力紫外線源を照射することによ
り、熱変質層６ｃを形成してもよい。Next, as a third embodiment, the thermally altered layer 6c may be formed by irradiating with a high-power ultraviolet source instead of the infrared heat source 12 in the second embodiment.
次に第４の実施例について第７図を用いて説明する。す
なわち、第１の実施例にオコいて第１の放射線感応性樹
脂に全面放射線照射工程（第４図ｂ）。Next, a fourth embodiment will be described using FIG. 7. That is, in addition to the first embodiment, a step of irradiating the entire first radiation-sensitive resin with radiation is performed (FIG. 4b).
また表面処理工程（第４図Ｃ）を、同時に行なおおうと
するものである。これは、第４図において、第１の放射
線感応性樹脂塗布後（第４図ａ）、フッ素系プラズマ照
射と放射線照射機能を有した装置により、放射線感応反
応層６ａと表面変質層６ｄを、フッ素系プラズマと放射
線１３により形成するものである（第７図ｂ）。Furthermore, the surface treatment step (FIG. 4C) is to be carried out at the same time. In FIG. 4, after coating the first radiation-sensitive resin (FIG. 4a), a radiation-sensitive reaction layer 6a and a surface-altered layer 6d are coated with a device having fluorine-based plasma irradiation and radiation irradiation functions. It is formed using fluorine-based plasma and radiation 13 (FIG. 7b).
次に第６の実施例について説明する。第４図において、
第１の放射線感応性樹脂５をあらかじめ放射線感応した
ものを塗布することにより、放射線照射する工程（第４
図ｂ）を省略するものである。Next, a sixth embodiment will be described. In Figure 4,
A step of irradiating radiation by applying a radiation-sensitized first radiation-sensitive resin 5 (fourth step)
Figure b) is omitted.
次に第１の実施例にもとづく具体例を第４図を用いて説
明する。Next, a specific example based on the first embodiment will be explained using FIG. 4.
第１のポジ形ＵＶフォトレジスト（キノンジアジド系）
６を膜厚１．０μｍ（ｔｌ）に塗布し、９０’Ｃ５分間
のソフトベーキングを施こす（第４図ａ）。First positive UV photoresist (quinone diazide type)
6 was applied to a film thickness of 1.0 μm (tl) and soft baked at 90'C for 5 minutes (Figure 4a).
次に、Ｈｑランプより発生させた紫外線領域（３０００
〜６ｏｏＯ人）の紫外線６を２００ｍ１／ｃｒＡの露光
エネルギーで照射することにより完全に光分解反応を施
こす（第４図ｂ）。そしてＣＦ４ガスによりプラズマを
発生させ、フッ素ラジカル７によって全面露光された第
１のポジ形ＵＶフォトレジス）５ａの表面に変質層６ｂ
を数十〜数百人形成する（第４図ｄ）。Next, ultraviolet light (3000
A complete photodecomposition reaction is carried out by irradiation with ultraviolet rays 6 of 200 ml/crA (Figure 4b). Plasma is then generated using CF4 gas, and a degraded layer 6b is formed on the surface of the first positive UV photoresist 5a, which is entirely exposed to fluorine radicals 7.
They form several tens to hundreds of people (Fig. 4 d).
次に、第１のポジ形ＵＶフォトレジストと同タイグであ
る第２のポジ形フォトレジスト８を、第１のポジ形ＵＶ
フォトレジストの変質層６ｂ上に１．０μｍ厚（ｔ２）
に塗布する。この時の総合膜厚はほぼ２．０μｍ（ｔ１
＋ｔ２）になる（第４図ｄ）。Next, a second positive photoresist 8 having the same type as the first positive UV photoresist is applied to the first positive UV photoresist.
1.0 μm thick (t2) on the photoresist altered layer 6b
Apply to. The total film thickness at this time is approximately 2.0 μm (t1
+t2) (Fig. 4d).
次に、微細パターン１０を有したレチクル９を介して縮
小投影露光法を用いて、更に４３６５人の単一波長１１
により１００ ｍｌ１ｃｒｌで第２．第１のポジ形ＵＶ
７オトレジスト（８ａ、５ｂ、５ａ）に照射する（第４
図ｅ）ｏ最後に、アルカリ性現像液により光感光したポ
ジ形フォトレジス）（８ａ。Next, using the reduction projection exposure method through the reticle 9 having the fine pattern 10, the single wavelength 11 of 4365 people was further exposed.
2nd with 100ml1crl. First positive UV
7 Irradiate the otoresist (8a, 5b, 5a) (4th
Figure e) o Finally, a positive photoresist (8a) exposed to light using an alkaline developer.
５ｂ、５ａの一部）を除去し、膜厚の厚いかつ微細パタ
ーン（８ｂ、５ｂ、５ａの一部）を得るものである。こ
れによると第１のポジ形ＵＶフォトレジス）５ａが紫外
線領の全波長により照射されるために、パターン（８ｂ
、５ｂ、５ａ）部のボトム部５ａでの定在波の影響が出
ないことになる。5b, part of 5a) to obtain a thick and fine pattern (part of 8b, 5b, 5a). According to this, since the first positive UV photoresist (5a) is irradiated with all wavelengths in the ultraviolet region, the pattern (8b)
, 5b, 5a), there is no influence of standing waves at the bottom portion 5a.
いずれの実施例においても、表面処理された第１の放射
線感応性樹脂層は、現像除去反応が起こりうる条件によ
ってそれぞれ設定すべきものである。また、第１．第２
の放射線感応性樹脂の膜厚条件は、下地である基板の凹
凸の段差量によって定めるべきであり、各々の実施例は
一例にすぎない。そして放射線感応性樹脂の種別に関し
ても、Ｘ線、電子ビーム、遠紫外線、紫外線、イオンビ
ームいずれに関しても本発明を適用できることは明確で
ある。In any of the examples, the surface-treated first radiation-sensitive resin layer should be set depending on the conditions under which the development and removal reaction can occur. Also, 1st. Second
The film thickness conditions of the radiation-sensitive resin should be determined depending on the amount of unevenness of the underlying substrate, and each embodiment is merely an example. Regarding the type of radiation-sensitive resin, it is clear that the present invention can be applied to any of X-rays, electron beams, deep ultraviolet rays, ultraviolet rays, and ion beams.
以上のように、本発明によると、放射線感応性樹脂膜を
厚く塗布（形成）することそ、段差部の凹凸を軽減する
ことができ、かつその上で段差部におけるパターン幅変
動率を減少させ、解像度。As described above, according to the present invention, by coating (forming) a radiation-sensitive resin film thickly, it is possible to reduce the unevenness of the stepped portion, and furthermore, it is possible to reduce the pattern width variation rate at the stepped portion. ,resolution.
感度の低下がない。また定在波の影響が少なくすること
ができる５つまり、本発明は今後の微細化への半導体集
積回路の重要な価値発揮するものである。No decrease in sensitivity. In addition, the influence of standing waves can be reduced.5 In other words, the present invention exhibits the important value of semiconductor integrated circuits for future miniaturization.
第１図（→は従来の単層放射線感応性樹脂法による段差
部ヘパターニングした断面図、同（ｂ）は同（ａ）の平
面図、第２図は従来法によシ段差部へ放射線感応性樹脂
を厚く塗布した状態の断面図、第３図は単層放射線感応
性樹脂による現像特性図、第４図（−）〜（ｆ）は本発
明の一実施例にかかるノ（ターン形成方法の工程図、第
６図（ａ）は従来法による照射特図、同（ｂ）は本発明
による照射特性図、第６図は本発明の実施例のパターン
形成の平面図、第７図（ａ）。
（ｂ） Ｈ本発明による他の実施例の工程図である。
４ Ｉｌｌ＠＠１１１１基板、５ ｍａｓｓｅｓポジＵ
Ｖフォトレジスト、６ａ拳・・・・・感光したポジＵＶ
フォトレジスト、５ ｂ 、 ５ Ｃ１１１１＋１＠・
・変質層、６・・・・・・ＵＶ光、７・・・・ａｓガス
プラズマ、８・・・・ＩＩＯＩ２Ｏ３ジＵＶフォトレジ
スト、８６ ｍｍｍ＠＠＠照射部、９ ｍｅｓｓｅｓマ
スク、１１・・・・・Ｏ紫外線、１２・・・・・・赤外
線熱源、１３・Φ・・・・放射線。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名＠１
！１！
２ ｔ１
第４図
第４図
第５図
１ＸＸ九本ルギ′−
１６図Figure 1 (→ is a cross-sectional view of the step part patterned using the conventional single-layer radiation-sensitive resin method, (b) is a plan view of the same (a), and Figure 2 is a cross-sectional view of the step part patterned using the conventional single-layer radiation-sensitive resin method. 3 is a cross-sectional view of a state in which a sensitive resin is thickly applied, FIG. 3 is a development characteristic diagram of a single-layer radiation-sensitive resin, and FIGS. Process diagram of the method, FIG. 6(a) is a special irradiation characteristic diagram according to the conventional method, FIG. 6(b) is a diagram showing irradiation characteristics according to the present invention, FIG. (a). (b) H is a process diagram of another embodiment according to the present invention. 4 Ill@@1111 substrate, 5 masses positive U
V photoresist, 6a fist...exposed positive UV
Photoresist, 5 b, 5 C1111+1@・
-Altered layer, 6...UV light, 7...AS gas plasma, 8...IIOI2O3 di-UV photoresist, 86 mm@@@irradiation part, 9 messes mask, 11... ...O ultraviolet rays, 12...Infrared heat source, 13.Φ...Radiation. Name of agent: Patent attorney Toshio Nakao and 1 other person @1
! 1! 2 t1 Figure 4 Figure 4 Figure 5 1XX Nine Lugi'- Figure 16
Claims (1)
程と、放射線照射を行ない、前記第１の放射線感応性樹
脂膜を放射線反応させる工程と、前記放射線反応した第
１の放射線感応性樹脂に表面処理を施す工程と、前記表
面処理を施した放射線反応した第１の放射線感応性樹脂
上に、第２の放射線感応性樹脂を塗布し、選択的に放射
線照射を行なう工程と、現像処理により、前記第１と第
２の放射線感応性樹脂膜を選択的に除去して放射線感応
性樹脂パターンを形成する工程とを備えたことを特徴と
するパターン形成方法。 ＠）第１及び第２の放射線感応性樹脂を同一放射線反応
機構を有するものを用いることを特徴とする特許請求の
範囲第１項に記載のパターン形成方法０ （ａ） ７ツ素系ガススラズマによって第１の放射線
感応性樹脂に表面処理を施こすことを特徴とする特許請
求の範囲第１項に記載のパターン形成方法。 隣） 赤外線熱源によって第１の放射線感応性樹脂に表
面処理を施こすことを特徴とする特許請求の範囲第１項
に記載のパターン形成方法。 ＠）高出力紫外線熱源によって第１の放射線感応性樹脂
に表面処理を施こすことを特徴とする特許請求の範囲第
１項に記載のパターン形成方法。 （６）第１．第２の放射線感応性樹脂が、紫外線感応性
樹脂であることを特徴とする特許請求の範囲第１項に記
載のパターン形成方法。 （７）第１．第２の放射線感応性樹脂が、遠紫外線感応
性樹脂であることを特徴とする特許請求の範囲第１項に
記載のパターン形成方法。 （８）第１．第２の放射線感応性樹脂が、電子ビーム感
応性樹脂であることを特徴とする特許請求の範囲第１項
に記載のパターン形成方法。 （９）第１．第２の放射線感応性樹脂が、Ｘ線感応性樹
脂であることを特徴とする特許請求の範囲第１項に記載
のパターン形成方法。 （１ｏ）第１の放射線感応性樹脂に、紫外線領域の全波
長を有する紫外線源を照射することを特徴とする特許請
求の範囲第１項または第６項に記載のパターン形成方法
。 （１１）単一紫外線波長源を用いて選択的に照射するこ
とを特徴とする特許請求の範囲第１項または第５項に記
載のパターン形成方法。 （１２）単一紫外線波長源に、屈折式投影露光法を用い
て照射することを特徴とする特許請求の範囲第１０項に
記載のパターン形成方法。 （１３）第１の放射線感応性樹脂を塗布した後、放射線
照射と表面処理を同時に前記第１の放射線感応性樹脂に
施こすことを特徴とする特許請求の範囲第１項に記載の
パターン形、成力法。 （１４）第１の放射線感応性樹脂に放射線感応反応した
ものを塗布することを特徴とする特許請求の範囲第１項
に記載のパターン形成方法。[Scope of Claims] (1) A step of coating a first radiation-sensitive resin on a substrate, a step of irradiating with radiation to cause the first radiation-sensitive resin film to react with radiation, and a step of causing the first radiation-sensitive resin film to react with radiation; A step of surface-treating the first radiation-sensitive resin, and applying a second radiation-sensitive resin on the radiation-reacted first radiation-sensitive resin that has been subjected to the surface treatment, and selectively irradiating the radiation-sensitive resin. and a step of selectively removing the first and second radiation-sensitive resin films by a development process to form a radiation-sensitive resin pattern. @) Pattern forming method according to claim 1, characterized in that the first and second radiation-sensitive resins have the same radiation reaction mechanism. 2. The pattern forming method according to claim 1, wherein the first radiation-sensitive resin is subjected to a surface treatment. 2. The pattern forming method according to claim 1, wherein the first radiation-sensitive resin is subjected to surface treatment using an infrared heat source. @) The pattern forming method according to claim 1, wherein the first radiation-sensitive resin is subjected to surface treatment using a high-power ultraviolet heat source. (6) 1st. 2. The pattern forming method according to claim 1, wherein the second radiation-sensitive resin is an ultraviolet-sensitive resin. (7) First. 2. The pattern forming method according to claim 1, wherein the second radiation-sensitive resin is a far-ultraviolet-sensitive resin. (8) 1st. 2. The pattern forming method according to claim 1, wherein the second radiation-sensitive resin is an electron beam-sensitive resin. (9) 1st. 2. The pattern forming method according to claim 1, wherein the second radiation-sensitive resin is an X-ray-sensitive resin. (1o) The pattern forming method according to claim 1 or 6, characterized in that the first radiation-sensitive resin is irradiated with an ultraviolet source having all wavelengths in the ultraviolet region. (11) The pattern forming method according to claim 1 or 5, characterized in that selective irradiation is performed using a single ultraviolet wavelength source. (12) The pattern forming method according to claim 10, characterized in that the irradiation is performed using a refractive projection exposure method with a single ultraviolet wavelength source. (13) The pattern shape according to claim 1, characterized in that after applying the first radiation-sensitive resin, radiation irradiation and surface treatment are simultaneously performed on the first radiation-sensitive resin. , Seirikiho. (14) The pattern forming method according to claim 1, wherein the first radiation-sensitive resin is coated with a radiation-sensitive resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041273A JPS58157135A (en) | 1982-03-15 | 1982-03-15 | Forming method for pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041273A JPS58157135A (en) | 1982-03-15 | 1982-03-15 | Forming method for pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157135A true JPS58157135A (en) | 1983-09-19 |
| JPH035653B2 JPH035653B2 (en) | 1991-01-28 |
Family
ID=12603828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57041273A Granted JPS58157135A (en) | 1982-03-15 | 1982-03-15 | Forming method for pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157135A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100563242B1 (en) * | 1999-12-02 | 2006-03-27 | 액셀리스 테크놀로지스, 인크. | Uv-assisted chemical modification of photoresist |
| US8039399B2 (en) | 2008-10-09 | 2011-10-18 | Micron Technology, Inc. | Methods of forming patterns utilizing lithography and spacers |
| US8409457B2 (en) | 2008-08-29 | 2013-04-02 | Micron Technology, Inc. | Methods of forming a photoresist-comprising pattern on a substrate |
| US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
| US9653315B2 (en) | 2008-12-04 | 2017-05-16 | Micron Technology, Inc. | Methods of fabricating substrates |
| US9761457B2 (en) | 2006-07-10 | 2017-09-12 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
-
1982
- 1982-03-15 JP JP57041273A patent/JPS58157135A/en active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100563242B1 (en) * | 1999-12-02 | 2006-03-27 | 액셀리스 테크놀로지스, 인크. | Uv-assisted chemical modification of photoresist |
| US9761457B2 (en) | 2006-07-10 | 2017-09-12 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10096483B2 (en) | 2006-07-10 | 2018-10-09 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10607844B2 (en) | 2006-07-10 | 2020-03-31 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US11335563B2 (en) | 2006-07-10 | 2022-05-17 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US11935756B2 (en) | 2006-07-10 | 2024-03-19 | Lodestar Licensing Group Llc | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
| US8409457B2 (en) | 2008-08-29 | 2013-04-02 | Micron Technology, Inc. | Methods of forming a photoresist-comprising pattern on a substrate |
| US8039399B2 (en) | 2008-10-09 | 2011-10-18 | Micron Technology, Inc. | Methods of forming patterns utilizing lithography and spacers |
| US9653315B2 (en) | 2008-12-04 | 2017-05-16 | Micron Technology, Inc. | Methods of fabricating substrates |
| US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH035653B2 (en) | 1991-01-28 |
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