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JPS5834921A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5834921A
JPS5834921A JP13528481A JP13528481A JPS5834921A JP S5834921 A JPS5834921 A JP S5834921A JP 13528481 A JP13528481 A JP 13528481A JP 13528481 A JP13528481 A JP 13528481A JP S5834921 A JPS5834921 A JP S5834921A
Authority
JP
Japan
Prior art keywords
ultra violet
coated
visible ray
far ultra
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13528481A
Inventor
Kunio Nakamura
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP13528481A priority Critical patent/JPS5834921A/en
Publication of JPS5834921A publication Critical patent/JPS5834921A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Abstract

PURPOSE:To improve chemichal resistance by a method wherein a far ultra violet photosensitive photoresist and a photoresist film that is opaque to far ultra violet rays are coated in order, then patterning with a visible ray is followed by patterning with far ultra violet exposure. CONSTITUTION:A negative type photoresist 3 that is photosensitive to far ultra violet rays is coated on a metal film 2 which is coated on a semiconductor substrate 1. Next, a positive type photoresist 4 that is photosensitive to a visible ray and opaque to far ultra violet rays is coated on the above surface, thereon a photomask 5 is place in contact with, then irradiation with a visible ray 6 is followed by development. The positive type photoresist layer which received the visible ray irradiation is removed to form an opening, ultra violet rays 7 is irradiated, and development is performed. Only the opening of a negative type photoresist 3, the lower layer, is exposed, then this is processed in proper etching liquid.
JP13528481A 1981-08-27 1981-08-27 Manufacture of semiconductor device Pending JPS5834921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13528481A JPS5834921A (en) 1981-08-27 1981-08-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13528481A JPS5834921A (en) 1981-08-27 1981-08-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5834921A true JPS5834921A (en) 1983-03-01

Family

ID=15148099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13528481A Pending JPS5834921A (en) 1981-08-27 1981-08-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5834921A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106132A (en) * 1983-11-15 1985-06-11 Fujitsu Ltd Formation of pattern
JPS60116132A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Forming method of negative type resist pattern
JPH05287826A (en) * 1992-04-10 1993-11-02 Koiwa Kanaami Kk Partition device
WO2004103040A2 (en) * 2003-05-13 2004-11-25 At & S Austria Technologie & Systemtechnik Aktiengesellschaft Method for coating blanks for the production of printed circuit boards (pcb)
JP2008516094A (en) * 2004-10-04 2008-05-15 シューバース・ゲーエムベーハー Crash helmet

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106132A (en) * 1983-11-15 1985-06-11 Fujitsu Ltd Formation of pattern
JPH0458168B2 (en) * 1983-11-15 1992-09-16 Fujitsu Ltd
JPS60116132A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Forming method of negative type resist pattern
JPH0318179B2 (en) * 1983-11-29 1991-03-11 Fujitsu Ltd
JPH05287826A (en) * 1992-04-10 1993-11-02 Koiwa Kanaami Kk Partition device
WO2004103040A2 (en) * 2003-05-13 2004-11-25 At & S Austria Technologie & Systemtechnik Aktiengesellschaft Method for coating blanks for the production of printed circuit boards (pcb)
WO2004103040A3 (en) * 2003-05-13 2005-06-09 Austria Tech & System Tech Method for coating blanks for the production of printed circuit boards (pcb)
JP2008516094A (en) * 2004-10-04 2008-05-15 シューバース・ゲーエムベーハー Crash helmet

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