JPS58154280A - トンネル形ジヨセフソン素子の作製方法 - Google Patents

トンネル形ジヨセフソン素子の作製方法

Info

Publication number
JPS58154280A
JPS58154280A JP57037792A JP3779282A JPS58154280A JP S58154280 A JPS58154280 A JP S58154280A JP 57037792 A JP57037792 A JP 57037792A JP 3779282 A JP3779282 A JP 3779282A JP S58154280 A JPS58154280 A JP S58154280A
Authority
JP
Japan
Prior art keywords
gas
thin film
tunnel
oxidation
base electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57037792A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258676B2 (nl
Inventor
Osamu Michigami
修 道上
Hisataka Takenaka
久貴 竹中
Yujiro Kato
加藤 雄二郎
Keiichi Tanabe
圭一 田辺
Shizuka Yoshii
吉井 静
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57037792A priority Critical patent/JPS58154280A/ja
Publication of JPS58154280A publication Critical patent/JPS58154280A/ja
Publication of JPS6258676B2 publication Critical patent/JPS6258676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0912Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP57037792A 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法 Granted JPS58154280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037792A JPS58154280A (ja) 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037792A JPS58154280A (ja) 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法

Publications (2)

Publication Number Publication Date
JPS58154280A true JPS58154280A (ja) 1983-09-13
JPS6258676B2 JPS6258676B2 (nl) 1987-12-07

Family

ID=12507341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037792A Granted JPS58154280A (ja) 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法

Country Status (1)

Country Link
JP (1) JPS58154280A (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0311675A (ja) * 1989-06-08 1991-01-18 Agency Of Ind Science & Technol ジョセフソン接合素子の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101917U (ja) * 1991-02-04 1992-09-02 日本電信電話株式会社 磁気カード

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0311675A (ja) * 1989-06-08 1991-01-18 Agency Of Ind Science & Technol ジョセフソン接合素子の製造方法
JPH0587193B2 (nl) * 1989-06-08 1993-12-15 Kogyo Gijutsuin

Also Published As

Publication number Publication date
JPS6258676B2 (nl) 1987-12-07

Similar Documents

Publication Publication Date Title
CN105324835B (zh) 薄膜晶体管及其制造方法
Zaima et al. Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVD
Hoagland et al. Characterization of Cu-CuTCNQ-M devices using scanning electron microscopy and scanning tunneling microscopy
JPS59132136A (ja) 半導体装置の製造方法
JPH0258332A (ja) 化合物半導体の表面をパッシベートする方法
DE3538328A1 (de) Verfahren zum selektiven abscheiden von wolfram auf leitenden und halbleitenden oberflaechen eines substrates
Hu et al. In situ spectroscopic ellipsometry study of the electron cyclotron resonance plasma oxidation of silicon and interfacial damage
JPS58154280A (ja) トンネル形ジヨセフソン素子の作製方法
JP2001271192A (ja) 表面処理方法
JP2595935B2 (ja) 表面清浄化方法
JPS60145375A (ja) Νb膜表面の不動態化処理方法
Omura et al. Lateral size of atomically flat oxidized region on Si (111) surface
JP2667231B2 (ja) ジョセフソン素子の製造方法
JPS6259467B2 (nl)
JPS587890A (ja) トンネル形ジヨセフソン接合素子の製造方法
JPS61150236A (ja) 半導体装置
JPS5943549A (ja) アルミニウム配線層の形成方法
JPH0429319A (ja) 半導体素子及びその製造方法
Bury XCI. The adsorption of butyric acid on water surfaces
Avigal et al. A new method for chemical vapor deposition of silicon dioxide
JP2637950B2 (ja) 表面清浄化方法
Michikami et al. Nb and Nb-based A15 compound tunnel junctions fabricated using a new CF 4 cleaning process
JPS6064437A (ja) 鉛系パツシベ−シヨンガラスのエツチング液
JPH01312870A (ja) 半導体装置
JPS58209809A (ja) 透明導電膜の形成方法