JPS58151072A - 光電変換素子及びその製造方法 - Google Patents

光電変換素子及びその製造方法

Info

Publication number
JPS58151072A
JPS58151072A JP58018039A JP1803983A JPS58151072A JP S58151072 A JPS58151072 A JP S58151072A JP 58018039 A JP58018039 A JP 58018039A JP 1803983 A JP1803983 A JP 1803983A JP S58151072 A JPS58151072 A JP S58151072A
Authority
JP
Japan
Prior art keywords
layer
conductive layer
transparent conductive
sno
tin oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58018039A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0516198B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Isao Myokan
明官　功
Masanari Shindo
新藤　昌成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP58018039A priority Critical patent/JPS58151072A/ja
Publication of JPS58151072A publication Critical patent/JPS58151072A/ja
Publication of JPH0516198B2 publication Critical patent/JPH0516198B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers

Landscapes

  • Photovoltaic Devices (AREA)
JP58018039A 1983-02-08 1983-02-08 光電変換素子及びその製造方法 Granted JPS58151072A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58018039A JPS58151072A (ja) 1983-02-08 1983-02-08 光電変換素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58018039A JPS58151072A (ja) 1983-02-08 1983-02-08 光電変換素子及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56178966A Division JPS5880877A (ja) 1981-11-10 1981-11-10 太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
JPS58151072A true JPS58151072A (ja) 1983-09-08
JPH0516198B2 JPH0516198B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-03

Family

ID=11960531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58018039A Granted JPS58151072A (ja) 1983-02-08 1983-02-08 光電変換素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPS58151072A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157578A (en) * 1981-03-23 1982-09-29 Sumitomo Electric Ind Ltd Active crystalline silicon thin film photovoltaic element
JPS5814582A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd 高効率のアモルフアスシリコン系太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157578A (en) * 1981-03-23 1982-09-29 Sumitomo Electric Ind Ltd Active crystalline silicon thin film photovoltaic element
JPS5814582A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd 高効率のアモルフアスシリコン系太陽電池

Also Published As

Publication number Publication date
JPH0516198B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-03

Similar Documents

Publication Publication Date Title
US4117506A (en) Amorphous silicon photovoltaic device having an insulating layer
US4213798A (en) Tellurium schottky barrier contact for amorphous silicon solar cells
US4251289A (en) Gradient doping in amorphous silicon
JP2006080557A (ja) 高水素希釈低温プラズマ蒸着によって製造されるアモルファスシリコン系素子の向上せしめられた安定化特性
JPH07123111B2 (ja) 半導体膜の製造方法及び光起電力構造体の製造方法
US4339470A (en) Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer
JPH0143449B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4710786A (en) Wide band gap semiconductor alloy material
US4415760A (en) Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
JP2000138384A (ja) 非晶質半導体素子及びその製造方法
US5049523A (en) Method of forming semiconducting materials and barriers
JPS58151072A (ja) 光電変換素子及びその製造方法
US5543634A (en) Method of forming semiconductor materials and barriers
JP3453329B2 (ja) 透明導電膜及びその製造方法
TW201201396A (en) Method for manufacturing a solar panel
US4705913A (en) Amorphous silicon devices and method of producing
JPS62256481A (ja) 半導体装置
JP2592809B2 (ja) 光起電力素子の製造方法
JPH0650780B2 (ja) 太陽電池及びその製造方法
US5073804A (en) Method of forming semiconductor materials and barriers
JPH04290274A (ja) 光電変換装置
JPS5853869A (ja) 光電変換装置作製方法
JPS6356712B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS58151073A (ja) 光電変換素子及びその製造方法
JPH0445991B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)