JPS58150852U - semiconductor pressure transducer - Google Patents
semiconductor pressure transducerInfo
- Publication number
- JPS58150852U JPS58150852U JP4688582U JP4688582U JPS58150852U JP S58150852 U JPS58150852 U JP S58150852U JP 4688582 U JP4688582 U JP 4688582U JP 4688582 U JP4688582 U JP 4688582U JP S58150852 U JPS58150852 U JP S58150852U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- pressure transducer
- gauge
- semiconductor pressure
- strain gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の１実施例を示すゲージクミの平面図、
第２図はその断面構造図である。
１・・・シリコンウェーハ、２・・・歪ケージ、４・・
・Ａｌｘ極、５・・・第２パツシベーシヨン、６・・・
感圧ダイヤフラム、８・・・ゲージチップ。FIG. 1 is a plan view of a gauge kumi showing one embodiment of the present invention;
FIG. 2 is a cross-sectional structural diagram thereof. 1... Silicon wafer, 2... Strain cage, 4...
・Alx pole, 5... 2nd passivation, 6...
Pressure sensitive diaphragm, 8...gauge tip.
Claims (1)
コンウェーハの、前記歪ゲージと反対の面をエツチング
により薄肉の感圧ダイヤフラムを形成後切断したゲージ
チップにおいて、前記感圧部以外に配設した前記歪ゲー
ジを接続する配線用および外部の入出力端子への接続用
のＡ１電極上に、例エバ窒化シリコン膜等の第２パツシ
ベーシヨンを形成し、かつ感圧ダイヤフラム上にかから
ないようにしたことを特徴とする半導体圧力変換器。In a gauge chip in which a thin pressure-sensitive diaphragm is formed by etching on the opposite side of a silicon wafer having a strain gauge formed by impurity diffusion on one side and then cut, the strain gauge disposed outside the pressure-sensitive part is A second passivation, such as an evaporative silicon nitride film, is formed on the A1 electrode for wiring to connect the gauge and for connection to an external input/output terminal, and is made so that it does not cover the pressure-sensitive diaphragm. Semiconductor pressure transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4688582U JPS58150852U (en) | 1982-04-02 | 1982-04-02 | semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4688582U JPS58150852U (en) | 1982-04-02 | 1982-04-02 | semiconductor pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58150852U true JPS58150852U (en) | 1983-10-08 |
Family
ID=30057867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4688582U Pending JPS58150852U (en) | 1982-04-02 | 1982-04-02 | semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58150852U (en) |
-
1982
- 1982-04-02 JP JP4688582U patent/JPS58150852U/en active Pending
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