JPS58150200A - 非揮発性で再プログラム可能な蓄積セル集積マトリツクス - Google Patents

非揮発性で再プログラム可能な蓄積セル集積マトリツクス

Info

Publication number
JPS58150200A
JPS58150200A JP58024524A JP2452483A JPS58150200A JP S58150200 A JPS58150200 A JP S58150200A JP 58024524 A JP58024524 A JP 58024524A JP 2452483 A JP2452483 A JP 2452483A JP S58150200 A JPS58150200 A JP S58150200A
Authority
JP
Japan
Prior art keywords
matrix
address
memory
read
rows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58024524A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241840B2 (enExample
Inventor
プルクハルト・ギ−ベル
ト−マス・フイツシヤ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of JPS58150200A publication Critical patent/JPS58150200A/ja
Publication of JPH0241840B2 publication Critical patent/JPH0241840B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/822—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for read only memories

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP58024524A 1982-02-18 1983-02-16 非揮発性で再プログラム可能な蓄積セル集積マトリツクス Granted JPS58150200A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP82200197.0 1982-02-18
EP82200197A EP0086905B1 (de) 1982-02-18 1982-02-18 Speichersystem mit einer integrierten Matrix aus nichtflüchtigen, umprogrammierbaren Speicherzellen

Publications (2)

Publication Number Publication Date
JPS58150200A true JPS58150200A (ja) 1983-09-06
JPH0241840B2 JPH0241840B2 (enExample) 1990-09-19

Family

ID=8189465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58024524A Granted JPS58150200A (ja) 1982-02-18 1983-02-16 非揮発性で再プログラム可能な蓄積セル集積マトリツクス

Country Status (4)

Country Link
US (1) US4750158A (enExample)
EP (1) EP0086905B1 (enExample)
JP (1) JPS58150200A (enExample)
DE (1) DE3276029D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198935A1 (de) * 1985-04-23 1986-10-29 Deutsche ITT Industries GmbH Elektrisch umprogrammierbarer Halbleiterspeicher mit Redundanz
JPS6433800A (en) * 1987-07-29 1989-02-03 Toshiba Corp Semiconductor memory
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US4905200A (en) * 1988-08-29 1990-02-27 Ford Motor Company Apparatus and method for correcting microcomputer software errors
EP0389203A3 (en) * 1989-03-20 1993-05-26 Fujitsu Limited Semiconductor memory device having information indicative of presence of defective memory cells
DE69024086T2 (de) 1989-04-13 1996-06-20 Sundisk Corp EEprom-System mit Blocklöschung
US7190617B1 (en) * 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
US5161157A (en) * 1990-03-12 1992-11-03 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
US5153880A (en) * 1990-03-12 1992-10-06 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
US5157634A (en) * 1990-10-23 1992-10-20 International Business Machines Corporation Dram having extended refresh time
JP3001252B2 (ja) * 1990-11-16 2000-01-24 株式会社日立製作所 半導体メモリ
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
JPH04278299A (ja) * 1991-03-07 1992-10-02 Sharp Corp 半導体記憶装置
JP2914171B2 (ja) * 1994-04-25 1999-06-28 松下電器産業株式会社 半導体メモリ装置およびその駆動方法
DE19708963C2 (de) * 1997-03-05 1999-06-02 Siemens Ag Halbleiterdatenspeicher mit einer Redundanzschaltung
USD496999S1 (en) 1998-07-23 2004-10-05 Centrix, Inc. Dental material placement and applicator device
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331058A (en) * 1964-12-24 1967-07-11 Fairchild Camera Instr Co Error free memory
US3422402A (en) * 1965-12-29 1969-01-14 Ibm Memory systems for using storage devices containing defective bits
US3665426A (en) * 1970-10-07 1972-05-23 Singer Co Alterable read only memory organization
US3934227A (en) * 1973-12-05 1976-01-20 Digital Computer Controls, Inc. Memory correction system
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
JPS6051199B2 (ja) * 1980-11-13 1985-11-12 富士通株式会社 半導体装置

Also Published As

Publication number Publication date
EP0086905B1 (de) 1987-04-08
US4750158A (en) 1988-06-07
EP0086905A1 (de) 1983-08-31
DE3276029D1 (en) 1987-05-14
JPH0241840B2 (enExample) 1990-09-19

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