JPS58147142A - Cu alloy for lead wire material of semiconductor device - Google Patents
Cu alloy for lead wire material of semiconductor deviceInfo
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- JPS58147142A JPS58147142A JP57030158A JP3015882A JPS58147142A JP S58147142 A JPS58147142 A JP S58147142A JP 57030158 A JP57030158 A JP 57030158A JP 3015882 A JP3015882 A JP 3015882A JP S58147142 A JPS58147142 A JP S58147142A
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
Description
【発明の詳細な説明】
本発明は半導体を養累とするＩＩＩＦのリード材として
特に価格が安く、曲げ加工性が良好で＾い導電性と強度
を有し、かつ良好な耐熱性を示す銅合金に関するもので
ある。Detailed Description of the Invention The present invention uses copper as a lead material for semiconductor-based IIIF, which is particularly inexpensive, has good bending workability, high conductivity and strength, and exhibits good heat resistance. It concerns alloys.
一般にＩＣ，Ｌ８に等の半導体ｖｅ素とする機器は例れ
も半導体ベレット、アイランドリード及びボンデングワ
イヤーによって構成されたものをハーメチックシール、
セラミックシール又はプラステツクンールにより封止し
たもので、植々の型式のものが用いられている。これ等
ａＳＳのリード（９−ドフレーム）には次のような特性
が要求されている。Generally, devices using semiconductor devices such as ICs and L8s are constructed with semiconductor pellets, island leads, and bonding wires with hermetic seals.
It is sealed with a ceramic seal or plastic seal, and a plant-type type is used. These aSS leads (9-frames) are required to have the following characteristics.
＋１１熱及び電気の伝導性が良いこと。+11 Good thermal and electrical conductivity.
（２）耐熱性が良いこと。(2) Good heat resistance.
（３）強度が蟲いこと。(3) The strength is weak.
（４）曲げ加工性が良いこと。(4) Good bending workability.
従来、半導体機器のリード杓にはに″ｅ−２９ｗｔ％Ｎ
ｉＮｉ−１Ｂ％Ｃｏ合金（以下ｗｔ％を率ｃ％と略ｔｅ
）、ｋ’ｅ−４２％Ｎム合金、Ｃｕ−２，４％Ｆｅ−０
，１３％Ｚｎ −０，０４％Ｐ合並。Conventionally, the lead ladle for semiconductor equipment was ``e-29wt%N''.
iNi-1B%Co alloy (hereinafter wt% is abbreviated as c%)
), k'e-42%N alloy, Cu-2,4%Fe-0
, 13%Zn-0,04%P.
Ｃｕ−５％Ｓｎ−α２％Ｐ合金等が用いられている。し
かしながらＦｅ−２９％Ｎ１−ｔ８％Ｃｏ合１１”ｅ−
４２％Ｎ五合金、Ｃｕ−５％Ｍｎ−０，２％Ｐ合金等は
十分な＊［。Cu-5%Sn-α2%P alloy etc. are used. However, Fe-29%N1-t8%Co 11”e-
42%N five-alloy, Cu-5%Mn-0,2%P alloy etc. are sufficient *[.
耐熱性及び曲げ加工性を有するも、電気及び熱の伝導性
が劣り、Ｃｕ−２，４％Ｆｅ−０，１３％Ｚ１ｍ−（Ｌ
Ｏ４％Ｐ合金は十分な強度及び耐熱性と成る程度の電気
と熱の伝導性を有するも、曲げ加工性か劣り。Although it has heat resistance and bending workability, it has poor electrical and thermal conductivity, and Cu-2,4%Fe-0,13%Z1m-(L
Although the O4%P alloy has sufficient strength and heat resistance and electrical and thermal conductivity, it has poor bending workability.
しかもこれ等の合金は何れも価格が＾い欠点があった。Moreover, all of these alloys had the disadvantage of being expensive.
本発明はこれに龜み槓々研究の結果、価格が安く、上記
特性を満足し、特に′−気と熱の伝導性が良好な半導体
ａＳＳのリード材用銅合金を―発したもので、８ｎＯＪ
ＪＳ−０，５％と、Ｃｒ、７ａｒ、希土類元系の何れか
１種又は２種以上を合計０．０１−０．３％と０冨０．
００１０％以下を含み、桟１ｉｃｕと不可避的不純物か
らなることを特徴とするものである。As a result of extensive research, the present invention has developed a copper alloy for lead materials for semiconductor ASS that is inexpensive, satisfies the above characteristics, and has particularly good air and heat conductivity. 8nOJ
JS-0.5%, a total of 0.01-0.3% of any one or more of Cr, 7ar, and rare earth elements, and 0.0.
0.0010% or less, and is characterized by consisting of 1 icu of crosspieces and unavoidable impurities.
障ち１本発明は通常の１１ｉ峻素銅に８ｔｘを添加する
ことによ４Ｊ、嘲特有の電気及び熱の伝導性を着しく劣
化せしめることなく１強度及び耐熱性を同上せしめ、こ
れにＯｒ％Ｚζ希土類元素渕れかｌａＩ又は２１１ＰＬ
上を添加すること６二より、電気及び耐熱性をあまり低
下せしめることなく、ｊｉｌ！ （−Ｉｊｉ ｆ及び耐
熱性を同上し１曲げ加工性が良好テ、従来（７） Ｃｕ
−’Ｑ％ Ｐｅ−０−１３％ ＺＫＩ−０，０４％ Ｆ
合金とほぼ同専の強度及び耐熱性を有し、かつはるかｇ
：俊れた電気（Ｊｌｋ）伝導性を有する合金な得たもの
である。Obstacle 1: By adding 8tx to ordinary 11i copper, the present invention can increase the strength and heat resistance of 4J without significantly deteriorating the electrical and thermal conductivity characteristic of 11i, and add Or %Zζ Rare earth element Fuchireka laI or 211PL
By adding 62, jil! without significantly reducing electrical and heat resistance. (-Iji f and heat resistance are the same as above, 1. Good bending workability, conventional (7) Cu
-'Q% Pe-0-13% ZKI-0,04% F
It has almost the same strength and heat resistance as alloys, and has much higher g
: It is an alloy with excellent electrical (Jlk) conductivity.
しかして本発明合金の組成範囲を上記の如く＃！ｉＬ足
したのは次の理由（二÷るものである。Therefore, the composition range of the alloy of the present invention is set as #! I added iL for the following reason (2 divided by 2).
偽含有量１−Ｑ、ＯＱｌ・％以下としたのは各添加元素
の鹸化を防止して有効に作用させるためで、０！含有量
が（２）０１０％を越えると所期の効巣が得られないた
めである。またａｎ含有量を０．０５〜０．５％と限定
したのは含有量が０．０５％未満では強度及び耐熱性の
向上が少なく、０．５％を越えると電気（〜伝導性の低
下が著しいためである。またＣｒ、 Ｚｒ。The false content was set to 1-Q, OQl·% or less in order to prevent saponification of each additive element and make it work effectively. This is because if the content exceeds (2)010%, the desired effect cannot be obtained. In addition, the reason why the an content is limited to 0.05-0.5% is that if the an content is less than 0.05%, there will be little improvement in strength and heat resistance, and if it exceeds 0.5%, there will be a decrease in electrical (~ conductivity). This is because Cr, Zr.
希土類元素の何４か１！１１又は２種以上の合計含有量
を０．Ｏ１〜０．３％と限定したのは何れも単独又はそ
の合計含有量が下限未成では充分な強度と耐熱性が得ら
れず、単独又は合計含有量が上＠を越えると電気（１１
１１％）伝導性の低下が著りくなるためである。The total content of any 4 or 11 or 2 or more rare earth elements is 0. If the O content is limited to 1 to 0.3%, sufficient strength and heat resistance cannot be obtained if the content alone or in total is below the lower limit, and if the content alone or in total exceeds the upper limit, electricity (11
11%) This is because the conductivity decreases significantly.
尚、希土類元素とはＬｍ、 Ｃｅ、Ｐｒ等のＣｅ族希土
類元素で、それぞれ単独又は混合物、特Ｃ希土順元案の
製錬過程で得られるミッシュメタル０４０〜５０％、Ｌ
８２０〜４０％、桟部その他の希土亀冗素）として用い
てもよい、思上これ等を辿と略記する。またＣｕ地金に
は無酸素−を用いて不活性ガス中で溶解するか、又はｔ
ｌｋ散票鋼や電気鋼を用いて真壁中でＩＩＩｍする。こ
れ等地金に含まれる不′Ｗｑ−１１的不純物としては通
常の地金に含まれる程度であれば何等合金の特性を掘な
うことはない。The rare earth elements are Ce group rare earth elements such as Lm, Ce, and Pr, each of which can be used singly or as a mixture, and can be used as misch metal 040-50%, L
820 to 40%, and may be used as a crosspiece or other rare earth/metallic material). In addition, Cu ingots can be dissolved in an inert gas using oxygen-free gas, or t
IIIm in Makabe using lk powder steel or electric steel. These impurities contained in the base metal will not affect the characteristics of the alloy in any way as long as they are contained in normal base metals.
以上本発明合金を実施例について説明する。Examples of the alloy of the present invention will be described above.
黒鉛ルツボを用いて真空中で’Ｍ１表に示す組成の合金
ＶＳ解鋳造に中Ｉ ＳｏｍＪＬ！Ｅ２５ｗｔ、！ＰＭＪ
Ｏａｍの鋳塊−を作成した。この鋳塊直；ついて一面当
り２．５露面削した後、再加熱して熱間圧延により巾１
５０ｍｍ。Using a graphite crucible in vacuum, alloys with the compositions shown in the M1 table are melted and cast. E25wt! P.M.J.
Oam ingot was created. After this ingot was straightened and milled by 2.5 mm per side, it was reheated and hot rolled to a width of 1 mm.
50mm.
厚さ８腸の板とした。これを酸洗した後、冷間圧端と焼
鈍を繰返し加えて最終加工率４０％、厚さ０．３箇の板
に仕上げた。これ等の板について、強度、耐熱性、電気
（至））伝導性及び曲げ加工性ｖｉｉｍべた。その結巣
な従来合金の特性と比較して弗１表に併記した。It was made into a plate with a thickness of 8 mm. After pickling, cold rolling and annealing were repeated to produce a plate with a final processing rate of 40% and a thickness of 0.3 pieces. These boards have excellent strength, heat resistance, electrical conductivity, and bendability. A comparison with the properties of conventional alloys is also listed in Table 1.
電気慟）伝導性は熱伝導性と相関の関係にある導電率ｔ
−ＪＩ８−１ｉｏ！！０５に基づいて測定し、強度は引
張強さをＪＩ８−名２鵞４１に基づいて測定した。Electrical conductivity is the electrical conductivity t, which is correlated with thermal conductivity.
-JI8-1io! ! 05, and tensile strength was measured based on JI8-Mei 2-41.
耐熱性は犀さα３露の板よりＪＩ＆−ｆｌ、２２０１に
示された試験片な切出し、これをアルゴン雰囲気中で１
００℃から７００℃まで５０℃間隔でｌ蒔間加島処理し
た後、引儀試験を行ない、縦軸に引張強さ、ａＷ軸に加
Ｓ温度を取って軟化曲線を−き加熱前の引張強さと、完
全軟化した時の引Ｉｊ＆強さの和の１を示す温度（半軟
化ｍ度）を求め声。Heat resistance was determined by cutting out a test piece shown in JI&-fl, 2201 from a plate of rhinoceros α3 dew, and holding it in an argon atmosphere for
After 1 Makima Kashima treatment from 00°C to 700°C at 50°C intervals, a pull test was performed, and the tensile strength before heating was plotted by taking the tensile strength on the vertical axis and the applied S temperature on the aW axis to calculate the softening curve. and the temperature at which the sum of the tension Ij and the strength when completely softened is 1 (half-softening m degrees).
また曲げ加工性は厚さＱ、３ｍの板より巾１（ｋｍ。Also, the bending workability is as follows: thickness Q, width 1 (km) from a 3m plate.
長さ５０閣の短冊型試験片を切出し、その中央部でｘｓ
ｏ”の密看曲げ試験を行ない、その曲げ邸を一察して割
れやしわのない平滑なものを曲げ加工性が良好というこ
とでＯ印１割れ等の欠陥が発生したものな曲げ加工性が
不良ということでｘ印、その中間のものをΔ印により表
わした。Cut out a rectangular test piece with a length of 50 cm, and
We conducted a secret bending test for ``O'' and checked the bending properties, and found that smooth objects with no cracks or wrinkles had good bending workability, while those with defects such as O mark 1 cracks had good bending workability. Failures are indicated by x marks, and those in between are indicated by Δ marks.
尚、ｓ１表中Ｍ、Ｍにはミッシュメタル（ｃｅ約５０％
）ｔ−用いた。In addition, M and M in the s1 table are misch metal (CE approx. 50%
)t-used.
ｓＩ表から明らかなよう感＝本発明合金は何れも引張強
さ３８〜４４Ｋｐ／ｍ、半軟化温度３５０−４１０’Ｃ
。It is clear from the sI table that all the alloys of the present invention have a tensile strength of 38 to 44 Kp/m and a semi-softening temperature of 350 to 410'C.
.
導電率６７〜９４％ｌＡＣ３の特性を有し、かつ曲げ加
工性が良好であり、従来合金Ａ６２３と比較しほぼ同等
の強度と耐熱性と、はるかに優れた電気備）伝導性と、
より優れた曲げ加工性を有することが判る。It has the characteristics of electrical conductivity of 67-94%lAC3, good bending workability, almost the same strength and heat resistance as conventional alloy A623, and far superior electrical conductivity.
It can be seen that it has better bending workability.
これに対し％８ｎ又はＣｒ％Ｚｒ％Ｍ、Ｍの何れか１種
又は２種以上の含有量が本発明合金の組成範囲より少な
い比較合音４１２． Ａｌ１１４〜腐１６では何れもｇ
Ｉｉ度及びＩｌ！ｔ＃ｌＩＩ性の低Ｆが著しく、またそ
の含有量の多い比較合金ム１３、雇１７〜ム１９では導
電率の低下が著しいことが判る。更に１ｉｌｌ集含有量
が多い比較合盆ム２０．ム２１では何れも添加元素のＷ
ｔ化により性能のバラツキが大きく曲げ加工性も劣るこ
とが判る。On the other hand, Comparative Synthesis 412.%8n or Cr%Zr%M, in which the content of one or more of M and M is lower than the composition range of the present invention alloy. All g for Al114~Ro16
Ii degree and Il! It can be seen that the conductivity of comparative alloys Mu 13 and Mu 17 to Mu 19, which have a significantly low F content in the t#lII property, is markedly reduced. In addition, comparison group 20. In both cases, the additive element W
It can be seen that the variation in performance is large and the bending workability is poor due to the increase in t.
このように本発明合金は半尋体ｍ器のリード材として養
水されている電気（熱〕伝導性、耐熱性１強度及び曲げ
加工性を−足し、特に等電性は着しく優れている等リー
ド材としてＪｉ１１着な効果を奏するものである。In this way, the alloy of the present invention has excellent electrical (thermal) conductivity, heat resistance, strength, and bending workability, which are used as lead materials for half-body m-type devices, and is particularly excellent in isoelectricity. It has the 11th effect as a lead material.
Claims (1)
類元本の何れか１檀又は２１１以上を合計０−０１−Ｑ
、３ｗｔ％と、ζ０．００１０ｗｔ％以上を含み、Ｗ＆
部Ｃ覗と不可避的不純物からなる半導体ａｌ器のリード
材用−合金。8110.05～(L5ft%, Cr, Zr rare earth principal one or more or 211 or more in total 0-01-Q
, 3wt% and ζ0.0010wt% or more, W&
Alloy for lead material of semiconductor aluminum device consisting of part C and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030158A JPS58147142A (en) | 1982-02-26 | 1982-02-26 | Cu alloy for lead wire material of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030158A JPS58147142A (en) | 1982-02-26 | 1982-02-26 | Cu alloy for lead wire material of semiconductor device |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP226388A Division JPS63241129A (en) | 1988-01-08 | 1988-01-08 | Copper alloy for lead material of semiconductor apparatus |
| JP226288A Division JPS63241128A (en) | 1988-01-08 | 1988-01-08 | Copper alloy for lead material of semiconductor apparatus |
| JP226488A Division JPS63241130A (en) | 1988-01-08 | 1988-01-08 | Copper alloy for lead material of semiconductor apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147142A true JPS58147142A (en) | 1983-09-01 |
| JPH0253502B2 JPH0253502B2 (en) | 1990-11-16 |
Family
ID=12295941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57030158A Granted JPS58147142A (en) | 1982-02-26 | 1982-02-26 | Cu alloy for lead wire material of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147142A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6233135U (en) * | 1985-08-14 | 1987-02-27 | ||
| JPS6456841A (en) * | 1987-08-27 | 1989-03-03 | Nippon Mining Co | Copper alloy foil for flexible circuit board |
| JPS6456842A (en) * | 1987-08-27 | 1989-03-03 | Nippon Mining Co | Copper alloy foil for flexible circuit board |
| US5155518A (en) * | 1988-08-24 | 1992-10-13 | Nikon Corporation | Focus detecting apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123923A (en) * | 1976-04-12 | 1977-10-18 | Sumitomo Electric Ind Ltd | Cu alloy for lead |
| JPS5347287A (en) * | 1976-10-13 | 1978-04-27 | Oki Electric Ind Co Ltd | Independent gate structure photo switch |
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5479121A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5479120A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5531173A (en) * | 1978-08-28 | 1980-03-05 | Nippon Steel Corp | Ni-saving type nonmagnetic stainless steel for rivet and screw |
-
1982
- 1982-02-26 JP JP57030158A patent/JPS58147142A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123923A (en) * | 1976-04-12 | 1977-10-18 | Sumitomo Electric Ind Ltd | Cu alloy for lead |
| JPS5347287A (en) * | 1976-10-13 | 1978-04-27 | Oki Electric Ind Co Ltd | Independent gate structure photo switch |
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5479121A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5479120A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5531173A (en) * | 1978-08-28 | 1980-03-05 | Nippon Steel Corp | Ni-saving type nonmagnetic stainless steel for rivet and screw |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6233135U (en) * | 1985-08-14 | 1987-02-27 | ||
| JPH0446353Y2 (en) * | 1985-08-14 | 1992-10-30 | ||
| JPS6456841A (en) * | 1987-08-27 | 1989-03-03 | Nippon Mining Co | Copper alloy foil for flexible circuit board |
| JPS6456842A (en) * | 1987-08-27 | 1989-03-03 | Nippon Mining Co | Copper alloy foil for flexible circuit board |
| US5155518A (en) * | 1988-08-24 | 1992-10-13 | Nikon Corporation | Focus detecting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0253502B2 (en) | 1990-11-16 |
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