JPH0253502B2 - - Google Patents
Info
- Publication number
- JPH0253502B2 JPH0253502B2 JP57030158A JP3015882A JPH0253502B2 JP H0253502 B2 JPH0253502 B2 JP H0253502B2 JP 57030158 A JP57030158 A JP 57030158A JP 3015882 A JP3015882 A JP 3015882A JP H0253502 B2 JPH0253502 B2 JP H0253502B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- conductivity
- strength
- heat resistance
- bending workability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 abstract description 15
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910001096 P alloy Inorganic materials 0.000 description 5
- 239000010953 base metal Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
Abstract
Description
本発明は半導体を要素とする機器のリード材と
して特に価格が安く、曲げ加工性が良好で高い導
電性と強度を有し、かつ良好な耐熱性を示す銅合
金に関するものである。
一般にIC、LSI等の半導体を要素とする機器は
何れも半導体ペレツト、アイランドリード及びボ
ンデイングワイヤーによつて構成されたものをハ
ーメチツクシール、セラミツクシール又はプラス
チツクシールにより封止したもので、種々の型式
のものが用いられている。これ等機器のリード
（リードフレーム）には次のような特性が要求さ
れている。
(1) 熱及び電気の伝導性が良いこと。
(2) 耐熱性が良いこと。
(3) 強度が高いこと。
(4) 曲げ加工性が良いこと。
従来、半導体機器のリード材にはFe−29wt％
Ni−18wt％Co合金（以下wt％を単に％と略記）、
Fe−42％Ni合金、Cu−2.4％Fe−0.13％Zn−0.04
％Ｐ合金、Cu−５％Sn−0.2％Ｐ合金等が用いら
れている。しかしながらFe−29％Ni−18％Co合
金、Fe−42％Ni合金、Cu−５％Sn−0.2％Ｐ合
金等は十分な強度、耐熱性及び加工性を有する
も、電気及び熱の伝導性が劣り、Cu−2.4％Fe−
0.13％Zn−0.04％Ｐ合金は十分な強度及び耐熱性
と或る程度の電気と熱の伝導性を有するも、曲げ
加工性が劣り、しかもこれ等の合金は何れも価格
が高い欠点があつた。
本発明はこれに鑑み種々研究の結果、価格が安
く、上記特性を満足し、特に電気と熱の伝導性が
良好な半導体機器のリード材用銅合金を開発した
もので、Sn0.05〜0.5％と、Cr0.01〜0.3％と
O20.0010％以下を含み、残部Cuと不可避的不純
物からなることを特徴とするものである。
即ち、本発明は通常の無酸素銅にSnを添加す
ることにより、銅特有の電気及び熱の伝導性を著
しく劣化せしめることなく、強度及び耐熱性を向
上せしめ、これにCrを添加することにより、電
気及び耐熱性をあまり低下せしめることなく、更
に強度及び耐熱性を向上し、曲げ加工性が良好
で、従来のCu−2.4％Fe−0.13％Zn−0.04％Ｐ合
金とほぼ同等の強度及び耐熱性を有し、かつはる
かに優れた電気（熱）伝導性を有する合金を得た
ものである。
しかして本発明合金の組成範囲を上記の如く限
定したのは次の理由によるものである。
O2含有量を0.0010％以下としたのは各添加元素
の酸化を防止して有効に作用させるためで、O2
含有量が0.0010％を越えると所期の効果が得られ
ないためである。またSn含有量を0.05〜0.5％と
限定したのは含有量が0.05％未満では強度及び耐
熱性の向上が少なく、0.5％を越えると電気（熱）
伝導の低下が著しいためである。またCr含有量
を0.01〜0.3％と限定したのは含有量が下限未満
では充分な強度と耐熱性が得られず、含有量が上
限を越えると電気（熱）伝導性の低下が著しくな
るためである。
またCu地金には無酸素銅を用いて不活性ガス
中で溶解するか、又は無酸素銅や電気銅を用いて
真空中で溶解する。これ等地金に含まれる不可避
的不純物としては通常の地金に含まれる程度であ
れば何等合金の特性を損なうことはない。
以下本発明合金を実施例について説明する。
黒鉛ルツボを用いて真空中で第１表に示す組成
の合金を溶解鋳造し、巾150mm、厚さ25mm、長さ
200mmの鋳塊を作成した。この鋳塊について一面
当り2.5mm面削した後、再加熱して熱間圧延によ
り巾150mm、厚さ８mmの板とした。これを酸洗し
た後、冷間圧延と焼鈍を繰返し加えて最終加工率
40％、厚さ0.3mmの板に仕上げた。これ等の板に
ついて、強度、耐熱性、電気（熱）伝導性及び曲
げ加工性を調べた。その結果を従来合金の特性と
比較して第１表に併記した。
電気（熱）伝導性は熱伝導性と相関の関係にあ
る導電率をJIS−HO505に基づいて測定し、強度
は引張強さをJIS−Z2241に基づいて測定した。
耐熱性は厚さ0.3mmの板よりJIS−Z2201に示さ
れた試験片を切出し、これをアルゴン雰囲気中で
100℃から700℃まで50℃間隔で１時間加熱処理し
た後、引張試験を行ない、縦軸に引張強さ、横軸
に加熱温度を取つて軟化曲線を画き加熱前の引張
強さと、完全軟化した時の引張強さの和の1/2を
示す温度（半軟化温度）を求めた。
また曲げ加工性は厚さ0.3mmの板より巾10mm、
長さ50mmの短冊型試験片を切出し、その中央部で
180°の密着曲げ試験を行ない、その曲げ部を観察
して割れやしわのない平滑なものを曲げ加工性が
良好ということで〇印、割れ等の欠陥が発生した
ものを曲げ加工性が不良ということで×印、その
中間のものを△印により表わした。
The present invention relates to a copper alloy that is particularly inexpensive as a lead material for devices using semiconductors, has good bending workability, high conductivity and strength, and exhibits good heat resistance. In general, devices that use semiconductors such as ICs and LSIs are composed of semiconductor pellets, island leads, and bonding wires that are sealed with hermetic seals, ceramic seals, or plastic seals. The model is used. The leads (lead frames) of these devices are required to have the following characteristics. (1) Good thermal and electrical conductivity. (2) Good heat resistance. (3) High strength. (4) Good bending workability. Conventionally, lead materials for semiconductor devices contained Fe-29wt%.
Ni-18wt%Co alloy (hereinafter wt% is simply abbreviated as %),
Fe−42%Ni alloy, Cu−2.4%Fe−0.13%Zn−0.04
%P alloy, Cu-5%Sn-0.2%P alloy, etc. are used. However, although Fe-29%Ni-18%Co alloy, Fe-42%Ni alloy, Cu-5%Sn-0.2%P alloy, etc. have sufficient strength, heat resistance, and workability, they have poor electrical and thermal conductivity. Cu−2.4%Fe−
Although the 0.13%Zn-0.04%P alloy has sufficient strength and heat resistance and a certain degree of electrical and thermal conductivity, it has poor bending workability, and all of these alloys have the disadvantage of being expensive. Ta. In view of this, as a result of various studies, the present invention has developed a copper alloy for lead materials for semiconductor devices that is inexpensive, satisfies the above characteristics, and has particularly good electrical and thermal conductivity. % and Cr0.01~0.3%
It is characterized by containing 0.0010% or less of O 2 , with the balance consisting of Cu and inevitable impurities. That is, the present invention improves strength and heat resistance by adding Sn to ordinary oxygen-free copper without significantly deteriorating the electrical and thermal conductivity peculiar to copper, and by adding Cr to this. , the strength and heat resistance are further improved without much deterioration in electrical and heat resistance, and the bending workability is good, making it almost the same strength and strength as the conventional Cu-2.4%Fe-0.13%Zn-0.04%P alloy. The result is an alloy that has heat resistance and far superior electrical (thermal) conductivity. The reason why the composition range of the alloy of the present invention is limited as described above is as follows. The reason why the O 2 content was set to 0.0010% or less was to prevent each additive element from oxidizing and make it work effectively.
This is because if the content exceeds 0.0010%, the desired effect cannot be obtained. In addition, the Sn content was limited to 0.05% to 0.5% because if the Sn content is less than 0.05%, there will be little improvement in strength and heat resistance, and if it exceeds 0.5%, electrical (heat)
This is because conduction is significantly reduced. In addition, the Cr content was limited to 0.01 to 0.3% because if the content is less than the lower limit, sufficient strength and heat resistance cannot be obtained, and if the content exceeds the upper limit, the electrical (thermal) conductivity will drop significantly. It is. Further, for the Cu base metal, oxygen-free copper is used and melted in an inert gas, or oxygen-free copper or electrolytic copper is used and melted in a vacuum. These unavoidable impurities contained in the base metal will not impair the properties of the alloy as long as they are contained in normal base metals. Examples of the alloy of the present invention will be described below. An alloy having the composition shown in Table 1 was melted and cast in a graphite crucible in a vacuum, and the width was 150 mm, the thickness was 25 mm, and the length was 150 mm.
A 200mm ingot was created. This ingot was face-milled by 2.5 mm per side, then reheated and hot rolled into a plate having a width of 150 mm and a thickness of 8 mm. After pickling, cold rolling and annealing are repeated to achieve the final processing rate.
40%, finished in a board with a thickness of 0.3mm. These plates were examined for strength, heat resistance, electrical (thermal) conductivity, and bending workability. The results are also listed in Table 1 in comparison with the properties of conventional alloys. The electrical (thermal) conductivity was determined by measuring conductivity, which is correlated with thermal conductivity, based on JIS-HO505, and the strength was determined by measuring tensile strength based on JIS-Z2241. Heat resistance was determined by cutting a test piece specified in JIS-Z2201 from a 0.3 mm thick plate and placing it in an argon atmosphere.
After heat treatment from 100℃ to 700℃ at 50℃ intervals for 1 hour, a tensile test was conducted, and the softening curve was drawn with the vertical axis representing the tensile strength and the horizontal axis representing the heating temperature, and the tensile strength before heating and complete softening. The temperature at which 1/2 of the sum of the tensile strengths is reached (half-softening temperature) was determined. In addition, the bending property is 10mm wide from a 0.3mm thick plate.
Cut out a rectangular test piece with a length of 50 mm, and
A 180° close bending test is performed, and the bent part is observed. Those that are smooth with no cracks or wrinkles are marked with a mark of good bending workability, and those with defects such as cracks are marked with poor bending workability. Therefore, I have indicated the values with an x mark and those in between with a △ mark.
【表】【table】
【表】
第１表から明らかなように本発明合金は何れも
引張強さ39〜43Kg／mm2、半軟化温度350〜400℃、
導電率65〜93％IACSの特性を有し、かつ曲げ加
工性が良好であり、従来合金No.８と比較しほぼ同
等の強度と耐熱性と、はるかに優れた電気（熱）
伝導性と、より優れた曲げ加工性を有することが
判る。
これに対し、Crの含有量が本発明合金の組成
範囲より少ない比較合金No.４では強度及び耐熱性
の低下が著しく、またその含有量の多い比較合金
No.５では導電率の低下が著しいことが判る。更に
酸素含有量が多い比較合金No.６では添加元素の酸
化により性能のバラツキが大きく曲げ加工法も劣
ることが判る。
このように本発明合金は半導体機器のリード材
として要求されている電気（熱）伝導性、耐熱
性、強度及び曲げ加工性を満足し、特に導電性は
著しく優れている等リード材として顕著な効果を
奏するものである。[Table] As is clear from Table 1, all of the alloys of the present invention have a tensile strength of 39 to 43 Kg/mm 2 , a semi-softening temperature of 350 to 400°C,
It has electrical conductivity of 65 to 93% IACS, has good bending workability, and has almost the same strength and heat resistance as conventional alloy No. 8, and far superior electrical (thermal) properties.
It can be seen that it has good conductivity and better bending workability. On the other hand, Comparative Alloy No. 4, which has a lower Cr content than the composition range of the present alloy, shows a significant decrease in strength and heat resistance, and Comparative Alloy No. 4, which has a higher Cr content,
It can be seen that in No. 5, the conductivity decreased significantly. Furthermore, it can be seen that Comparative Alloy No. 6, which has a high oxygen content, has large variations in performance due to oxidation of added elements and is inferior in bending process. As described above, the alloy of the present invention satisfies the electrical (thermal) conductivity, heat resistance, strength, and bending workability required for lead materials for semiconductor devices, and has particularly excellent electrical conductivity. It is effective.
Claims (1)
O20.0010wt％以下を含み、残部Cuと不可避的不
純物からなる半導体機器のリード材用銅合金。1 Sn0.05~0.5wt%, Cr0.01~0.3wt%,
A copper alloy for lead material of semiconductor devices, containing 0.0010wt% or less of O 2 and the balance being Cu and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030158A JPS58147142A (en) | 1982-02-26 | 1982-02-26 | Cu alloy for lead wire material of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030158A JPS58147142A (en) | 1982-02-26 | 1982-02-26 | Cu alloy for lead wire material of semiconductor device |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP226388A Division JPS63241129A (en) | 1988-01-08 | 1988-01-08 | Copper alloy for lead material of semiconductor apparatus |
| JP226488A Division JPS63241130A (en) | 1988-01-08 | 1988-01-08 | Copper alloy for lead material of semiconductor apparatus |
| JP226288A Division JPS63241128A (en) | 1988-01-08 | 1988-01-08 | Copper alloy for lead material of semiconductor apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147142A JPS58147142A (en) | 1983-09-01 |
| JPH0253502B2 true JPH0253502B2 (en) | 1990-11-16 |
Family
ID=12295941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57030158A Granted JPS58147142A (en) | 1982-02-26 | 1982-02-26 | Cu alloy for lead wire material of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147142A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0446353Y2 (en) * | 1985-08-14 | 1992-10-30 | ||
| JP2505480B2 (en) * | 1987-08-27 | 1996-06-12 | 日鉱金属株式会社 | Copper alloy foil for flexible circuit boards |
| JP2505481B2 (en) * | 1987-08-27 | 1996-06-12 | 日鉱金属株式会社 | Copper alloy foil for flexible circuit boards |
| US5155518A (en) * | 1988-08-24 | 1992-10-13 | Nikon Corporation | Focus detecting apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123923A (en) * | 1976-04-12 | 1977-10-18 | Sumitomo Electric Ind Ltd | Cu alloy for lead |
| JPS5347287A (en) * | 1976-10-13 | 1978-04-27 | Oki Electric Ind Co Ltd | Independent gate structure photo switch |
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5479120A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5479121A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5531173A (en) * | 1978-08-28 | 1980-03-05 | Nippon Steel Corp | Ni-saving type nonmagnetic stainless steel for rivet and screw |
-
1982
- 1982-02-26 JP JP57030158A patent/JPS58147142A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123923A (en) * | 1976-04-12 | 1977-10-18 | Sumitomo Electric Ind Ltd | Cu alloy for lead |
| JPS5347287A (en) * | 1976-10-13 | 1978-04-27 | Oki Electric Ind Co Ltd | Independent gate structure photo switch |
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5479120A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5479121A (en) * | 1977-12-07 | 1979-06-23 | Sumitomo Electric Ind Ltd | Copper alloy for trolley wire |
| JPS5531173A (en) * | 1978-08-28 | 1980-03-05 | Nippon Steel Corp | Ni-saving type nonmagnetic stainless steel for rivet and screw |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58147142A (en) | 1983-09-01 |
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