JPS5814525A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5814525A
JPS5814525A JP56111867A JP11186781A JPS5814525A JP S5814525 A JPS5814525 A JP S5814525A JP 56111867 A JP56111867 A JP 56111867A JP 11186781 A JP11186781 A JP 11186781A JP S5814525 A JPS5814525 A JP S5814525A
Authority
JP
Japan
Prior art keywords
substrate
region
single crystal
temperature
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56111867A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376017B2 (OSRAM
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56111867A priority Critical patent/JPS5814525A/ja
Publication of JPS5814525A publication Critical patent/JPS5814525A/ja
Publication of JPH0376017B2 publication Critical patent/JPH0376017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Recrystallisation Techniques (AREA)
JP56111867A 1981-07-17 1981-07-17 半導体装置の製造方法 Granted JPS5814525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56111867A JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111867A JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5814525A true JPS5814525A (ja) 1983-01-27
JPH0376017B2 JPH0376017B2 (OSRAM) 1991-12-04

Family

ID=14572149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111867A Granted JPS5814525A (ja) 1981-07-17 1981-07-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5814525A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147425A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60210833A (ja) * 1984-04-05 1985-10-23 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6178917A (ja) * 1984-09-22 1986-04-22 Teruo Koi 基礎杭の築造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023140604A (ja) 2022-03-23 2023-10-05 キオクシア株式会社 半導体記憶装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LETT *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147425A (ja) * 1983-02-10 1984-08-23 Seiko Instr & Electronics Ltd 半導体結晶膜の形成方法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60210833A (ja) * 1984-04-05 1985-10-23 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6178917A (ja) * 1984-09-22 1986-04-22 Teruo Koi 基礎杭の築造方法

Also Published As

Publication number Publication date
JPH0376017B2 (OSRAM) 1991-12-04

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