JPS58142683A - 固体撮像素子の製造方法 - Google Patents

固体撮像素子の製造方法

Info

Publication number
JPS58142683A
JPS58142683A JP57025426A JP2542682A JPS58142683A JP S58142683 A JPS58142683 A JP S58142683A JP 57025426 A JP57025426 A JP 57025426A JP 2542682 A JP2542682 A JP 2542682A JP S58142683 A JPS58142683 A JP S58142683A
Authority
JP
Japan
Prior art keywords
region
semiconductor region
semiconductor
solid
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57025426A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262067B2 (enrdf_load_stackoverflow
Inventor
Hidetsugu Oda
織田　英嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57025426A priority Critical patent/JPS58142683A/ja
Publication of JPS58142683A publication Critical patent/JPS58142683A/ja
Publication of JPS6262067B2 publication Critical patent/JPS6262067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57025426A 1982-02-18 1982-02-18 固体撮像素子の製造方法 Granted JPS58142683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57025426A JPS58142683A (ja) 1982-02-18 1982-02-18 固体撮像素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57025426A JPS58142683A (ja) 1982-02-18 1982-02-18 固体撮像素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58142683A true JPS58142683A (ja) 1983-08-24
JPS6262067B2 JPS6262067B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=12165632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57025426A Granted JPS58142683A (ja) 1982-02-18 1982-02-18 固体撮像素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58142683A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088463A (ja) * 1983-10-21 1985-05-18 Nec Corp 固体撮像素子
WO1991003839A1 (en) * 1989-09-05 1991-03-21 Eastman Kodak Company Blooming control and reduced image lag in interline transfer ccd area image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088463A (ja) * 1983-10-21 1985-05-18 Nec Corp 固体撮像素子
WO1991003839A1 (en) * 1989-09-05 1991-03-21 Eastman Kodak Company Blooming control and reduced image lag in interline transfer ccd area image sensor

Also Published As

Publication number Publication date
JPS6262067B2 (enrdf_load_stackoverflow) 1987-12-24

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