JPS58141573A - 集積回路及びその作製方法 - Google Patents

集積回路及びその作製方法

Info

Publication number
JPS58141573A
JPS58141573A JP57024993A JP2499382A JPS58141573A JP S58141573 A JPS58141573 A JP S58141573A JP 57024993 A JP57024993 A JP 57024993A JP 2499382 A JP2499382 A JP 2499382A JP S58141573 A JPS58141573 A JP S58141573A
Authority
JP
Japan
Prior art keywords
semiconductor
substrate
layer
semiconductor layer
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57024993A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0512865B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57024993A priority Critical patent/JPS58141573A/ja
Publication of JPS58141573A publication Critical patent/JPS58141573A/ja
Publication of JPH0512865B2 publication Critical patent/JPH0512865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57024993A 1982-02-18 1982-02-18 集積回路及びその作製方法 Granted JPS58141573A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57024993A JPS58141573A (ja) 1982-02-18 1982-02-18 集積回路及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57024993A JPS58141573A (ja) 1982-02-18 1982-02-18 集積回路及びその作製方法

Publications (2)

Publication Number Publication Date
JPS58141573A true JPS58141573A (ja) 1983-08-22
JPH0512865B2 JPH0512865B2 (enrdf_load_stackoverflow) 1993-02-19

Family

ID=12153498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57024993A Granted JPS58141573A (ja) 1982-02-18 1982-02-18 集積回路及びその作製方法

Country Status (1)

Country Link
JP (1) JPS58141573A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855797A (en) * 1987-07-06 1989-08-08 Siemens Corporate Research And Support, Inc. Modulation doped high electron mobility transistor with n-i-p-i structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133574A (en) * 1979-04-05 1980-10-17 Nec Corp Insulated gate field effect transistor
JPS567481A (en) * 1979-06-29 1981-01-26 Ibm Field effect type transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133574A (en) * 1979-04-05 1980-10-17 Nec Corp Insulated gate field effect transistor
JPS567481A (en) * 1979-06-29 1981-01-26 Ibm Field effect type transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855797A (en) * 1987-07-06 1989-08-08 Siemens Corporate Research And Support, Inc. Modulation doped high electron mobility transistor with n-i-p-i structure

Also Published As

Publication number Publication date
JPH0512865B2 (enrdf_load_stackoverflow) 1993-02-19

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