JPS58140139A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPS58140139A JPS58140139A JP2388082A JP2388082A JPS58140139A JP S58140139 A JPS58140139 A JP S58140139A JP 2388082 A JP2388082 A JP 2388082A JP 2388082 A JP2388082 A JP 2388082A JP S58140139 A JPS58140139 A JP S58140139A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- nitride
- silicon nitride
- fluoride
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920001721 polyimide Polymers 0.000 claims abstract description 40
- 239000004642 Polyimide Substances 0.000 claims abstract description 39
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008595 infiltration Effects 0.000 abstract description 3
- 238000001764 infiltration Methods 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2388082A JPS58140139A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2388082A JPS58140139A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58140139A true JPS58140139A (ja) | 1983-08-19 |
| JPH038581B2 JPH038581B2 (enrdf_load_stackoverflow) | 1991-02-06 |
Family
ID=12122760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2388082A Granted JPS58140139A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58140139A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60165739A (ja) * | 1984-02-07 | 1985-08-28 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPS63104425A (ja) * | 1986-10-09 | 1988-05-09 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | バイアの形成方法 |
| JPH02235359A (ja) * | 1989-03-09 | 1990-09-18 | Oki Electric Ind Co Ltd | 多層配線形成方法 |
| JPH02238627A (ja) * | 1989-03-10 | 1990-09-20 | Nec Corp | 半導体装置 |
| JP2009524217A (ja) * | 2006-01-12 | 2009-06-25 | クリー インコーポレイテッド | 炭化ケイ素デバイス用のエッジ終端構造およびエッジ終端構造を含む炭化ケイ素デバイスの製造方法 |
| US8124480B2 (en) | 2003-01-15 | 2012-02-28 | Cree, Inc. | Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations |
-
1982
- 1982-02-16 JP JP2388082A patent/JPS58140139A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60165739A (ja) * | 1984-02-07 | 1985-08-28 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPS63104425A (ja) * | 1986-10-09 | 1988-05-09 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | バイアの形成方法 |
| JPH02235359A (ja) * | 1989-03-09 | 1990-09-18 | Oki Electric Ind Co Ltd | 多層配線形成方法 |
| JPH02238627A (ja) * | 1989-03-10 | 1990-09-20 | Nec Corp | 半導体装置 |
| US8124480B2 (en) | 2003-01-15 | 2012-02-28 | Cree, Inc. | Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations |
| US9515135B2 (en) | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
| JP2009524217A (ja) * | 2006-01-12 | 2009-06-25 | クリー インコーポレイテッド | 炭化ケイ素デバイス用のエッジ終端構造およびエッジ終端構造を含む炭化ケイ素デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH038581B2 (enrdf_load_stackoverflow) | 1991-02-06 |
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