JPS58139471A - Ｍｉｓ電界効果トランジスタ - Google Patents

Ｍｉｓ電界効果トランジスタ

Info

Publication number
JPS58139471A
JPS58139471A JP57022363A JP2236382A JPS58139471A JP S58139471 A JPS58139471 A JP S58139471A JP 57022363 A JP57022363 A JP 57022363A JP 2236382 A JP2236382 A JP 2236382A JP S58139471 A JPS58139471 A JP S58139471A
Authority
JP
Japan
Prior art keywords
region
type
regions
source
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57022363A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0424877B2 (enrdf_load_html_response
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57022363A priority Critical patent/JPS58139471A/ja
Publication of JPS58139471A publication Critical patent/JPS58139471A/ja
Publication of JPH0424877B2 publication Critical patent/JPH0424877B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57022363A 1982-02-15 1982-02-15 Ｍｉｓ電界効果トランジスタ Granted JPS58139471A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57022363A JPS58139471A (ja) 1982-02-15 1982-02-15 Ｍｉｓ電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57022363A JPS58139471A (ja) 1982-02-15 1982-02-15 Ｍｉｓ電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS58139471A true JPS58139471A (ja) 1983-08-18
JPH0424877B2 JPH0424877B2 (enrdf_load_html_response) 1992-04-28

Family

ID=12080538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57022363A Granted JPS58139471A (ja) 1982-02-15 1982-02-15 Ｍｉｓ電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS58139471A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02306665A (ja) * 1989-05-20 1990-12-20 Fujitsu Ltd 半導体装置の製造方法
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JP2007214495A (ja) * 2006-02-13 2007-08-23 Oki Electric Ind Co Ltd 半導体装置および半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103778A (en) * 1975-03-10 1976-09-13 Nippon Telegraph & Telephone Handotaisochito sonoseizohoho
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103778A (en) * 1975-03-10 1976-09-13 Nippon Telegraph & Telephone Handotaisochito sonoseizohoho
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02306665A (ja) * 1989-05-20 1990-12-20 Fujitsu Ltd 半導体装置の製造方法
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JP2007214495A (ja) * 2006-02-13 2007-08-23 Oki Electric Ind Co Ltd 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0424877B2 (enrdf_load_html_response) 1992-04-28

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