JPS58137249A - 固体撮像素子 - Google Patents

固体撮像素子

Info

Publication number
JPS58137249A
JPS58137249A JP57019294A JP1929482A JPS58137249A JP S58137249 A JPS58137249 A JP S58137249A JP 57019294 A JP57019294 A JP 57019294A JP 1929482 A JP1929482 A JP 1929482A JP S58137249 A JPS58137249 A JP S58137249A
Authority
JP
Japan
Prior art keywords
channel stopper
channel
solid
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57019294A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236397B2 (enrdf_load_stackoverflow
Inventor
Nobuhiro Minotani
箕谷　宣広
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57019294A priority Critical patent/JPS58137249A/ja
Publication of JPS58137249A publication Critical patent/JPS58137249A/ja
Publication of JPS6236397B2 publication Critical patent/JPS6236397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57019294A 1982-02-08 1982-02-08 固体撮像素子 Granted JPS58137249A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57019294A JPS58137249A (ja) 1982-02-08 1982-02-08 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57019294A JPS58137249A (ja) 1982-02-08 1982-02-08 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS58137249A true JPS58137249A (ja) 1983-08-15
JPS6236397B2 JPS6236397B2 (enrdf_load_stackoverflow) 1987-08-06

Family

ID=11995405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57019294A Granted JPS58137249A (ja) 1982-02-08 1982-02-08 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS58137249A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224352A (ja) * 1985-03-29 1986-10-06 Matsushita Electronics Corp 固体撮像装置
US6760073B1 (en) 1998-09-18 2004-07-06 Nec Electronics Corporation Solid-state image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224352A (ja) * 1985-03-29 1986-10-06 Matsushita Electronics Corp 固体撮像装置
US6760073B1 (en) 1998-09-18 2004-07-06 Nec Electronics Corporation Solid-state image sensor

Also Published As

Publication number Publication date
JPS6236397B2 (enrdf_load_stackoverflow) 1987-08-06

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