JPS58132756A - アモルフアス・シリコン感光体製造方法とその製造装置 - Google Patents

アモルフアス・シリコン感光体製造方法とその製造装置

Info

Publication number
JPS58132756A
JPS58132756A JP57015877A JP1587782A JPS58132756A JP S58132756 A JPS58132756 A JP S58132756A JP 57015877 A JP57015877 A JP 57015877A JP 1587782 A JP1587782 A JP 1587782A JP S58132756 A JPS58132756 A JP S58132756A
Authority
JP
Japan
Prior art keywords
amorphous silicon
path
chamber
film forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57015877A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03626B2 (enExample
Inventor
Katsumi Suzuki
克己 鈴木
Hideji Yoshizawa
吉澤　秀二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57015877A priority Critical patent/JPS58132756A/ja
Priority to US06/457,231 priority patent/US4501766A/en
Priority to GB08300948A priority patent/GB2114160B/en
Priority to DE3303435A priority patent/DE3303435C2/de
Publication of JPS58132756A publication Critical patent/JPS58132756A/ja
Publication of JPH03626B2 publication Critical patent/JPH03626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP57015877A 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法とその製造装置 Granted JPS58132756A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57015877A JPS58132756A (ja) 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法とその製造装置
US06/457,231 US4501766A (en) 1982-02-03 1983-01-11 Film depositing apparatus and a film depositing method
GB08300948A GB2114160B (en) 1982-02-03 1983-01-14 Film depositing apparatus and method
DE3303435A DE3303435C2 (de) 1982-02-03 1983-02-02 Vorrichtung zur Abscheidung einer Schicht aus amorphem Silizium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57015877A JPS58132756A (ja) 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法とその製造装置

Publications (2)

Publication Number Publication Date
JPS58132756A true JPS58132756A (ja) 1983-08-08
JPH03626B2 JPH03626B2 (enExample) 1991-01-08

Family

ID=11901016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57015877A Granted JPS58132756A (ja) 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法とその製造装置

Country Status (1)

Country Link
JP (1) JPS58132756A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010618A (ja) * 1983-06-30 1985-01-19 Canon Inc プラズマｃｖｄ装置
JPS60186849A (ja) * 1984-02-14 1985-09-24 エナージー・コンバーション・デバイセス・インコーポレーテッド 堆積膜形成方法および装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010618A (ja) * 1983-06-30 1985-01-19 Canon Inc プラズマｃｖｄ装置
JPS60186849A (ja) * 1984-02-14 1985-09-24 エナージー・コンバーション・デバイセス・インコーポレーテッド 堆積膜形成方法および装置

Also Published As

Publication number Publication date
JPH03626B2 (enExample) 1991-01-08

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