JPS58127360A - 集積回路装置 - Google Patents

集積回路装置

Info

Publication number
JPS58127360A
JPS58127360A JP57008794A JP879482A JPS58127360A JP S58127360 A JPS58127360 A JP S58127360A JP 57008794 A JP57008794 A JP 57008794A JP 879482 A JP879482 A JP 879482A JP S58127360 A JPS58127360 A JP S58127360A
Authority
JP
Japan
Prior art keywords
collector
integrated circuit
emitter
circuit
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57008794A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0419709B2 (enExample
Inventor
Tetsutada Sakurai
桜井 哲真
Kotaro Kato
加藤 浩太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57008794A priority Critical patent/JPS58127360A/ja
Publication of JPS58127360A publication Critical patent/JPS58127360A/ja
Publication of JPH0419709B2 publication Critical patent/JPH0419709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP57008794A 1982-01-25 1982-01-25 集積回路装置 Granted JPS58127360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008794A JPS58127360A (ja) 1982-01-25 1982-01-25 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008794A JPS58127360A (ja) 1982-01-25 1982-01-25 集積回路装置

Publications (2)

Publication Number Publication Date
JPS58127360A true JPS58127360A (ja) 1983-07-29
JPH0419709B2 JPH0419709B2 (enExample) 1992-03-31

Family

ID=11702769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008794A Granted JPS58127360A (ja) 1982-01-25 1982-01-25 集積回路装置

Country Status (1)

Country Link
JP (1) JPS58127360A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219497U (enExample) * 1975-07-30 1977-02-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219497U (enExample) * 1975-07-30 1977-02-10

Also Published As

Publication number Publication date
JPH0419709B2 (enExample) 1992-03-31

Similar Documents

Publication Publication Date Title
US4809056A (en) Semiconductor device having a silicon on insulator structure
US3955210A (en) Elimination of SCR structure
JPS6159540B2 (enExample)
US3789503A (en) Insulated gate type field effect device and method of making the same
JPH10150150A (ja) 半導体装置
US3748547A (en) Insulated-gate field effect transistor having gate protection diode
JPS60171771A (ja) 絶縁ゲ−ト半導体装置
JPH03129764A (ja) 半導体装置
JPS62229967A (ja) Npnトランジスタ−の固有降伏電圧より大きい降伏電圧を有するnpn等価構造
EP0104754B1 (en) Metal insulator semiconductor device with source region connected to a reference voltage
JPH0419709B2 (enExample)
KR910003275B1 (ko) 반도체장치와 그 제조방법
JPS6046064A (ja) 半導体装置
JP2944115B2 (ja) 複合トランジスタ回路装置
JPS61207051A (ja) 半導体装置
JPS62104068A (ja) 半導体集積回路装置
JPH02214164A (ja) 入力保護回路を備えたmosfet
JPS59127865A (ja) 半導体装置
JPS61127157A (ja) 半導体装置
JPS6014512B2 (ja) 絶縁ゲ−ト型電界効果トランジスタ
JPS6276775A (ja) 半導体装置
JPH0245977A (ja) デュアル・ゲート型絶録ゲート電界効果トランジスタ
JPH0612818B2 (ja) 半導体装置
JPH05109993A (ja) 半導体装置
JPH0558256B2 (enExample)