JPS58127330A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58127330A
JPS58127330A JP879382A JP879382A JPS58127330A JP S58127330 A JPS58127330 A JP S58127330A JP 879382 A JP879382 A JP 879382A JP 879382 A JP879382 A JP 879382A JP S58127330 A JPS58127330 A JP S58127330A
Authority
JP
Japan
Prior art keywords
silicon oxide
film
material layer
lift
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP879382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643337B2 (OSRAM
Inventor
Tadashi Serikawa
正 芹川
Satoshi Sekine
聡 関根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP879382A priority Critical patent/JPS58127330A/ja
Publication of JPS58127330A publication Critical patent/JPS58127330A/ja
Publication of JPS643337B2 publication Critical patent/JPS643337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP879382A 1982-01-25 1982-01-25 半導体装置の製造方法 Granted JPS58127330A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP879382A JPS58127330A (ja) 1982-01-25 1982-01-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP879382A JPS58127330A (ja) 1982-01-25 1982-01-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58127330A true JPS58127330A (ja) 1983-07-29
JPS643337B2 JPS643337B2 (OSRAM) 1989-01-20

Family

ID=11702740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP879382A Granted JPS58127330A (ja) 1982-01-25 1982-01-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58127330A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679299A (en) * 1986-08-11 1987-07-14 Ncr Corporation Formation of self-aligned stacked CMOS structures by lift-off
JP2013165284A (ja) * 2013-04-09 2013-08-22 Panasonic Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07191907A (ja) * 1993-11-09 1995-07-28 Internatl Business Mach Corp <Ibm> キャッシュ・メモリ・アレイに記憶されるデータの有効ステータスを効率的に管理するための方法及びシステム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4679299A (en) * 1986-08-11 1987-07-14 Ncr Corporation Formation of self-aligned stacked CMOS structures by lift-off
JP2013165284A (ja) * 2013-04-09 2013-08-22 Panasonic Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS643337B2 (OSRAM) 1989-01-20

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