JPS58120311A - Limiter - Google Patents

Limiter

Info

Publication number
JPS58120311A
JPS58120311A JP57003703A JP370382A JPS58120311A JP S58120311 A JPS58120311 A JP S58120311A JP 57003703 A JP57003703 A JP 57003703A JP 370382 A JP370382 A JP 370382A JP S58120311 A JPS58120311 A JP S58120311A
Authority
JP
Japan
Prior art keywords
base
trq1
power supply
transistor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57003703A
Other languages
Japanese (ja)
Other versions
JPS6338889B2 (en
Inventor
Hiroyasu Yamaguchi
山口 浩保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57003703A priority Critical patent/JPS58120311A/en
Publication of JPS58120311A publication Critical patent/JPS58120311A/en
Publication of JPS6338889B2 publication Critical patent/JPS6338889B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G11/00Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/002Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general without controlling loop

Abstract

PURPOSE:To obtain a limiter circuit of high performance with a simple constitution, by supplying a bias power supply to the base of one of a differential pair of transistors and at the same time connecting an output terminal and a level limiting transistor to the base of the other transistor respectively. CONSTITUTION:An end of a resistance R11 is connected to an input terminal, and the other end is connected to an output terminal, the base of a transistor TRQ1 and the collector of a TRQ5 of opposite polarity. A TRQ2 having a bias power supply VB connected to the base forms a differential pair with the TRQ1. The emitters of the TRQ1 and Q2 are connected in common and then connected to a power supply VCC via a constant current source I1. The base of the TRQ5 is connected to the collector of the TRQ2, and the collectors of the TRQ1 and Q2 are connected to a negative power supply via a current mirror pair of TRQ3 and Q4. When the level of an output terminal OUT rises up to the value approximately equal to the voltage VB, the TRQ1 becomes nonconductive and the TRQ2 starts its conduction. When the current of the TRQ2 exceeds that of a TRQ4, this differential flows to the base of the TRQ5. Then the collector current of the TRQ5 flows, and the voltage drop of an R11 is increased and then becomes steady when the base potential of the TRQ1 is equal to the voltage VB. Thus the output voltage is kept at a constant level.

Description

【発明の詳細な説明】 (発明の技術分野) この発明は電子回路一般に好適するり擢ツタに関する。[Detailed description of the invention] (Technical field of invention) The present invention relates to a slider suitable for electronic circuits in general.

(発明の技術的背jL−およびその問題点)従来、各種
の電子回路にあっては信号(直流)レベルtある任意の
値(0も含む)以上あるいは)以下とならないように制
限する目的で、jII図(I) 、 (b)に示すよう
なリミッタが使用されているO すなわち、(1)は入出力端IN、OUT間に抵抗Rm
k介して図示極性の如きバイアス電源ym  とダイオ
ードDIとの直列回路を並列状に接続する如くした回路
であって、菖2図に実線で示すように略々VF + V
B (但しVνはダイオードDIe)I[方向電圧)な
るレベルに制限することができるものである。
(Technical Background of the Invention and its Problems) Conventionally, in various electronic circuits, the purpose of limiting the signal (DC) level t so that it does not go above or below a certain arbitrary value (including 0) has been , j II A limiter as shown in Figures (I) and (b) is used. In other words, (1) is a resistance Rm between the input and output terminals IN and OUT.
This is a circuit in which a series circuit of a bias power supply ym with the polarity shown and a diode DI is connected in parallel through k, and as shown by the solid line in Diagram 2, approximately VF + V
B (where Vv is the diode DIe) I [direction voltage] which can be limited to a level.

tた、(b)は入出力端IN、OUT間に抵抗Rat介
して演算増幅器OF、およびダイオードDlを側路状に
接続すると共に、演算増幅器OF、の入力他端にバイア
ス電源Vl  f接続する如くシタ回路であって、第2
図に破線で示すようにVm  なるレベルに制限するこ
とができるものである。
In addition, in (b), an operational amplifier OF and a diode Dl are connected in a bypass manner between the input and output terminals IN and OUT via a resistor Rat, and a bias power supply Vl is connected to the other input terminal of the operational amplifier OF. It is a circuit like that, and the second
As shown by the broken line in the figure, it can be limited to a level of Vm.

しかしながら、(a)の場合は簡易な構成である反面に
性能が悪いという欠点を有し、(b)の場合は高性能で
ある反面に構成が複雑化すぎるという欠点を有し、いず
れにしろ一長一短であった。
However, while (a) has a simple configuration, it has the disadvantage of poor performance, and (b) has high performance but has the disadvantage of having an overly complex configuration. It had its pros and cons.

(発明の目的) そこで、この発明は以上のような点に銖みてなされたも
ので、比較的簡易な構成で高性能とし得るように改^し
た極めて棗好なり電ツタを提供すること1目的としてい
る0 (発明の概ys> すなわち、この発明によるりンツタは、一端が入力端に
且つ他端が出力端に接続された抵抗と、一方のベースが
前記出力端に且つ他方のベースがバイアス電源に接続さ
れると共に共通エミッタが定電流源に接続され次入力レ
ベル検出用の差動対トランジスタとt設けると共に、こ
れら差動対トランジスタとは逆極性を有し、そ)一方の
ベースにコレクタが且つ他方のコレクタにベースが接続
され九レベル制限用のトランジスタを設ける如く構成し
た点に特徴を有している。
(Objective of the Invention) Therefore, this invention has been made in consideration of the above points, and one object is to provide an extremely nut-loving electric ivy that has been modified to have a relatively simple structure and high performance. 0 (Summary of the Invention) In other words, the Rintsuta according to the present invention includes a resistor having one end connected to the input end and the other end connected to the output end, one base connected to the output end, and the other base connected to the bias. A differential pair transistor is connected to the power supply and a common emitter is connected to a constant current source for detecting the next input level. is characterized in that the base is connected to the collector of the other, and a transistor for limiting nine levels is provided.

(発明の実施例) 以下図面を参照してこの発明の一実施例につき詳細に説
明する0 すなわち、第3図に示すように被レベル制限用の信号が
印加される入力端INは抵抗R□を介して出力端OUT
に接続されると共に、トランジスタQ1のベースに接続
されている。
(Embodiment of the Invention) An embodiment of the invention will be described below in detail with reference to the drawings. That is, as shown in FIG. Output terminal OUT via
and the base of transistor Q1.

ここで、トランジスタQ1はベースにバイアス電源vm
  が接続されているトランジスタQ。
Here, the transistor Q1 has a bias power supply vm at its base.
is connected to the transistor Q.

と共に差動対となされる0そして、この差動対トランジ
スタQ1−Qtは、それらの共通エミッタが定電流源I
I介して正電源+Vcc  K接続され、且つそれらの
各コレクタがカレン々ラ一対トランジスタQs=Qat
介して負電源−vHに接続されている。
0 and this differential pair transistors Q1-Qt are formed into a differential pair with their common emitters connected to a constant current source I
A pair of transistors Qs=Qat are connected to the positive power supply +Vcc K through I, and their respective collectors are connected to the
It is connected to the negative power supply -vH via the negative power supply -vH.

It、差動対トランジスタQ1−QlにおけるQICベ
ースにコレクタが且つ同じ<QXのコレクタにベースが
接続されたレベル制限用のトランジスタQ、は、そのエ
ミッタが負電源−Vll  に接続されている。
It, a level limiting transistor Q whose collector is connected to the QIC base of the differential pair transistors Q1-Ql and whose base is connected to the collector of the same <QX, has its emitter connected to the negative power supply -Vll.

而して、以上の構成において入力端INから加えられる
入力信号すなわち出力端OUTよりJTI!iされる出
力信号のレベルがバイアス電源Vl電圧よりも低いとき
には、差動対トランジスタQ*−QmはQlが導通でQ
、が非導通状態となる。
In the above configuration, the input signal applied from the input terminal IN, that is, from the output terminal OUT, JTI! When the level of the output signal applied to i is lower than the bias power supply Vl voltage, the differential pair transistor Q*-Qm has Ql conductive and Q
, becomes non-conductive.

これによって、かかる状態ではカレントン2一対トラン
ジスタQl=Q4が導通で且つレベル制限用トランジス
タQsは非導通状態となるので入力信号は抵抗Ru’?
通して出力端OU丁に導出されるととになる。
As a result, in such a state, the current pair of transistors Ql=Q4 is conductive and the level limiting transistor Qs is non-conductive, so that the input signal is applied to the resistor Ru'?
It is led out to the output terminal OUT through the terminal.

次に、入力信号(すなわち出力信号)のレベルが上昇し
てバイアス電源Vl  電圧と同11度になったとする
と1.差動対トランジスタQtsQ重はQSの導通が非
導通方向に向い且つQtの非導通が導通方向に向い始め
るようになる0これによって%Qlの電流がカレント考
う一対ト2ンジスタQl=Q4のうち入力側Q4の電流
よりも大きくなると、その差分の電流がレベル制限用ト
ランジスタQsのベースに流れるようになるので、皺Q
wKコレクタ電流が流れ始めることになる。
Next, suppose that the level of the input signal (that is, the output signal) rises to 11 degrees, which is the same as the bias power supply Vl voltage. The differential pair transistor QtsQ weight is such that the conduction of QS becomes non-conductive and the non-conduction of Qt begins to become conductive.As a result, the current of %Ql becomes the current of the pair of transistors Ql=Q4. When the current becomes larger than the current on the input side Q4, the difference current flows to the base of the level limiting transistor Qs, so the wrinkle Q
wK collector current will begin to flow.

すると、抵抗R11での電位降下が増大して差動対トラ
ンジスタQ1−QlのうちQlのベース電位がQlのベ
ース電位すなわちバイアス電源V■電圧と略等しくなっ
た状態で安定を保持する。
Then, the potential drop across the resistor R11 increases, and stability is maintained in a state in which the base potential of Q1 of the differential pair transistors Q1-Q1 becomes approximately equal to the base potential of Q1, that is, the bias power supply voltage V.sub.1.

この場合、レベル制限用トランジスタQ@の最大電流は
、差動対ト2ンジスタQx−Q雪のうちQSが非導通で
且つQlが導通状態となるときに与えられるもので、そ
れは諌Qsの直流電流増幅率1/としたとき!・!(但
し、lは定電流illの電流)となる0 つまり、抵抗R11での最大電位降下は!・■・RII
であって、リミッタ動作可能最大入力vt(麗ムX〕は Vt(mAx) = Vl+/ 弓* RHで与えられ
る。
In this case, the maximum current of the level limiting transistor Q@ is the one given when QS of the differential pair transistor Qx-Q is non-conductive and Ql is conductive, and it is the DC current of When the current amplification factor is 1/!・! (However, l is the current of constant current ill) 0 In other words, the maximum potential drop across resistor R11 is!・■・RII
The limiter operable maximum input vt (Reimu X) is given by Vt (mAx) = Vl + / Bow * RH.

第4図は一般的な値としてVl t= I V 。FIG. 4 shows a general value of Vl t = IV.

R,、−10に#、l−10声ム、/=100つまり最
大リンット電流が/”I=1aム で且つ最大すきット
入力電圧Vf(菖ムx)=Vl+/・!・帽、−11V
とし九ときの入出力伝達特性を示している0これによれ
ば、リミッタ動作音し始めてからり擢ツタ動作を終了す
るまでの間における出力電位変動は約1.1vまでの約
100mVO範囲に抑えられるので、比較的に簡単な構
成で高性能のりオツタ【実現し得ることが分る。
R,,-10 is #, l-10, /=100, that is, the maximum lint current is /"I=1am, and the maximum clearance input voltage Vf (Iris x) = Vl+/...!-hat, -11V
This shows the input/output transfer characteristics when the time is 9. According to this, the output potential fluctuation from the start of the limiter operation noise until the end of the tsuta operation is suppressed to about 100mVO range of about 1.1V. Therefore, it can be seen that high-performance glue can be achieved with a relatively simple configuration.

なお、この発明は上記し且つ図示した実施例Oみに限定
されることなく、この発明の要旨【逸脱しない範囲で種
々の変形や適用が可能であることは言う迄もない。
It goes without saying that this invention is not limited to the embodiment O described above and illustrated, and that various modifications and applications can be made without departing from the gist of the invention.

例えば、差動対トランジスタQI −QtO工建エイに
抵抗やダイオードを挿入してり建ツタ動作時の出力レベ
ル変動幅を広げるようにしてもよい。
For example, a resistor or a diode may be inserted into the differential pair transistors QI-QtO to widen the range of output level fluctuation during the differential operation.

また、カレント々ラ一対トランジスタQseQ4は必ず
しも用いなくてもよいもので、Q4に代えて抵抗や定電
流源等の他の負荷を用いるようにしてもよい0 そして、レベル制限用トランジスタQs kダーリント
ン接続とすることにより、リンツタ動作可能幅をそれの
合成電流増幅率倍だけ広げるようにしてもよい。
In addition, the current pair of transistors QseQ4 is not necessarily used, and other loads such as resistors or constant current sources may be used in place of Q4.Then, the level-limiting transistor Qsk Darlington connection is used. By doing so, the operable width of the rinsing device may be expanded by a factor of the composite current amplification factor.

さらには、第5図に示すように第3図におけるレベル制
限用トランジスタQ、のペースにペースが直結される同
一特性の電流出力用トランジスタQ@に接続することに
より、上述のβ【/−N(但し、NはQs−Q・のエミ
ツタ面積比)に抑制してβ変動の影響を受けないように
することもできる。
Furthermore, as shown in FIG. 5, by connecting the current output transistor Q@ with the same characteristics whose pace is directly connected to the pace of the level limiting transistor Q in FIG. (However, N can be suppressed to the emitter area ratio of Qs-Q.) so as not to be affected by the β fluctuation.

そして、かかる第5図の場合、トランジスタQlOコレ
クタ電流が入力信号に略比例しているので、第6図−)
 、 (b) 、 (e)に示すような波形関係が得ら
れる半波整流回路として使用することが可能となる。す
なわち、(a)の如き入力電圧Vimに対してトランジ
スタQ・のコレクタに流れる整流出力電流Ivy は(
、)の如く正の半夛イim タルで1.υ!中1−(但し、Vlnは入力信号電圧)
となり、且つ負の半サイクルで1.υt = Qとなる
。なお、トランジスタQsのコレクタに生じる出力電圧
voot  は(b)の如(1out  とは反対とな
る〇 また、第5図のすべてのトランジスタの極性IpNp;
:NpNとする如く相互転換してやれば負電圧す(ツタ
またはjlEa図とは逆極性の波形関係を有した半波整
流回路を実現することができる〇 纂7図は以上の各側を組合せることによってaS図−)
 、 (b) 、 (e)IN示すような波形関係【有
した正・負リミッタtXは両波整流回路【実現し皮もの
で、これ以外にも折線りきツタやスライチー勢としても
容品に実現することが可能であるO (発明の効果) 従って、以上詳述したようにこの発明によれば、比較的
簡単な構成で高性能とし得る極めて良好なりンツタを提
供することが可能となる0
In the case of Fig. 5, the collector current of the transistor QlO is approximately proportional to the input signal, so Fig. 6-)
It becomes possible to use it as a half-wave rectifier circuit that can obtain the waveform relationships shown in , (b), and (e). That is, the rectified output current Ivy flowing to the collector of the transistor Q for the input voltage Vim as shown in (a) is (
, ) is the positive half number im 1. υ! Middle 1- (however, Vln is the input signal voltage)
and 1. in the negative half cycle. υt = Q. Note that the output voltage voot generated at the collector of the transistor Qs is as shown in (b) (opposite to 1out) Also, the polarity IpNp of all the transistors in FIG.
: If mutually converted as NpN, a negative voltage can be realized (a half-wave rectifier circuit with a waveform relationship of opposite polarity to that in the tsuta or jlEa diagram can be realized.) Figure 7 shows the combination of the above sides. aS diagram by)
, (b), (e) The positive and negative limiter tX with the waveform relationship shown in IN is a double-wave rectifier circuit. (Effects of the Invention) Therefore, as detailed above, according to the present invention, it is possible to provide an extremely good connector that can achieve high performance with a relatively simple configuration.

【図面の簡単な説明】 第1図(1) 、 (b)は従来のりζツタを示す構成
図、第一回は第1図(1) 、 (b)の入出力伝達特
性【示す曲線図、第3図はこの発明に係るり建ツタの一
実施例を示す回路構成図、第4図は!3図の入出力伝達
特性を例示する曲線図、絡5図乃至第8図は他の異なる
実施例に係る回路構成図とそれらの各部の波形を示す図
である。 IN・・・入力端、R31・・・抵抗、OUT・・・i
カ端、Ql−Ql・・・差動対トランジスタ、Qs  
m Q4・・・カレントンツ一対トランジスタ、■・・
・定電流源、Q−・・・レベル制限用トランジスタ。 出願人代理人 弁理士  鈴 江 武 彦1151 (a)           (b) 13図 fs4図 Vl(M^X〕 第5図      1!611 1s8図
[Brief explanation of the drawings] Figures 1 (1) and (b) are configuration diagrams showing conventional glue ζ vines. , FIG. 3 is a circuit configuration diagram showing an embodiment of the wooden ivy according to the present invention, and FIG. 4 is! FIG. 3 is a curve diagram illustrating the input/output transfer characteristic, and FIGS. 5 to 8 are diagrams showing circuit configuration diagrams and waveforms of each part according to other different embodiments. IN...Input terminal, R31...Resistor, OUT...i
end, Ql-Ql...differential pair transistor, Qs
m Q4...Pair of current transistors, ■...
- Constant current source, Q-... level limiting transistor. Applicant's agent Patent attorney Takehiko Suzue 1151 (a) (b) Figure 13 fs4 Figure Vl (M^X) Figure 5 1!611 Figure 1s8

Claims (1)

【特許請求の範囲】 一端が入力端に且つ他端が出力端KII統された抵抗と
、前記出力端に一方のペースが且つ他方のペースがバイ
アス電源に接続されると共に共通エミッタが定電RII
IKIII続された運動対トランジスタと、これら差動
対トランジスタとは逆極性【有し、その一方のペースに
コレクタが且つ他方のコレクタにペースが接続さ9れた
レベル制限用のトランジスタとt具備してなること【特
徴とするリミッタ。
[Claims] A resistor having one end connected to an input end and the other end connected to an output end KII, one pace connected to the output end and the other pace connected to a bias power supply, and a common emitter connected to a constant current RII.
The differential pair transistors have opposite polarity and a level limiting transistor whose collector is connected to one of the transistors and whose collector is connected to the collector of the other. [Featured limiter.
JP57003703A 1982-01-13 1982-01-13 Limiter Granted JPS58120311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003703A JPS58120311A (en) 1982-01-13 1982-01-13 Limiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003703A JPS58120311A (en) 1982-01-13 1982-01-13 Limiter

Publications (2)

Publication Number Publication Date
JPS58120311A true JPS58120311A (en) 1983-07-18
JPS6338889B2 JPS6338889B2 (en) 1988-08-02

Family

ID=11564722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003703A Granted JPS58120311A (en) 1982-01-13 1982-01-13 Limiter

Country Status (1)

Country Link
JP (1) JPS58120311A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441512A (en) * 1987-08-07 1989-02-13 Mitsubishi Electric Corp Clip circuit
JPH0236607A (en) * 1988-07-27 1990-02-06 Hitachi Ltd Limiter circuit
JP2009038789A (en) * 2007-04-19 2009-02-19 National Semiconductor Germany Ag Circuit arrangement and method for limiting signal voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441512A (en) * 1987-08-07 1989-02-13 Mitsubishi Electric Corp Clip circuit
JPH0236607A (en) * 1988-07-27 1990-02-06 Hitachi Ltd Limiter circuit
JP2009038789A (en) * 2007-04-19 2009-02-19 National Semiconductor Germany Ag Circuit arrangement and method for limiting signal voltage

Also Published As

Publication number Publication date
JPS6338889B2 (en) 1988-08-02

Similar Documents

Publication Publication Date Title
JPH0544845B2 (en)
US4575643A (en) Full-wave rectifier circuit
JPS58120311A (en) Limiter
JPS6038925A (en) Signal converter
JPH0339426B2 (en)
JPS5827411A (en) Differential amplifier circuit
JPS6146566A (en) Absolute value circuit
JPH0527282B2 (en)
JPS631454Y2 (en)
JPS632888Y2 (en)
JP2599304B2 (en) Constant current circuit
JPS6033717A (en) Current mirror circuit
JPH0225286B2 (en)
JPH0438568Y2 (en)
JPS5910627Y2 (en) Absolute value detection circuit
JPS6029229Y2 (en) differential amplifier
JPS6035303Y2 (en) Waveform shaping circuit
JPS5912803Y2 (en) Detection device with temperature compensation
JPH0122288Y2 (en)
JPS5942902B2 (en) square circuit
JPH0349461Y2 (en)
JPS6118457Y2 (en)
JPH0229450Y2 (en)
JPS588329A (en) Bias circuit
JPS59181806A (en) Current mirror circuit