JPS58119671A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS58119671A
JPS58119671A JP57002120A JP212082A JPS58119671A JP S58119671 A JPS58119671 A JP S58119671A JP 57002120 A JP57002120 A JP 57002120A JP 212082 A JP212082 A JP 212082A JP S58119671 A JPS58119671 A JP S58119671A
Authority
JP
Japan
Prior art keywords
semiconductor
field effect
effect transistor
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57002120A
Other languages
English (en)
Japanese (ja)
Other versions
JPH025302B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Noburo Hashizume
橋爪　信郎
Yutaka Hayashi
豊 林
Mutsuro Ogura
睦郎 小倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57002120A priority Critical patent/JPS58119671A/ja
Publication of JPS58119671A publication Critical patent/JPS58119671A/ja
Publication of JPH025302B2 publication Critical patent/JPH025302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57002120A 1982-01-09 1982-01-09 電界効果トランジスタ Granted JPS58119671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57002120A JPS58119671A (ja) 1982-01-09 1982-01-09 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57002120A JPS58119671A (ja) 1982-01-09 1982-01-09 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS58119671A true JPS58119671A (ja) 1983-07-16
JPH025302B2 JPH025302B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-01

Family

ID=11520485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57002120A Granted JPS58119671A (ja) 1982-01-09 1982-01-09 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS58119671A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170071A (ja) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
JPS5932173A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
JPS59124171A (ja) * 1982-12-30 1984-07-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ２重ヘテロ接合ｆｅｔ
JPS60263475A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置
JPS60263476A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置の製法
JPS62262463A (ja) * 1986-05-08 1987-11-14 Nec Corp 半導体装置
US4729000A (en) * 1985-06-21 1988-03-01 Honeywell Inc. Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates
JPH02111073A (ja) * 1988-10-20 1990-04-24 Fujitsu Ltd 絶縁ゲート電界効果トランジスタおよびその集積回路装置
US5124770A (en) * 1985-10-07 1992-06-23 Hitachi, Ltd. Field effect transistor with alpha particle protection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi
JPS55160473A (en) * 1979-03-28 1980-12-13 Thomson Csf Semiconductor device and method of fabricating same
JPS5851574A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi
JPS55160473A (en) * 1979-03-28 1980-12-13 Thomson Csf Semiconductor device and method of fabricating same
JPS5851574A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170071A (ja) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
JPS5932173A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
JPS59124171A (ja) * 1982-12-30 1984-07-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ２重ヘテロ接合ｆｅｔ
JPS60263475A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置
JPS60263476A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置の製法
US4729000A (en) * 1985-06-21 1988-03-01 Honeywell Inc. Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates
US5124770A (en) * 1985-10-07 1992-06-23 Hitachi, Ltd. Field effect transistor with alpha particle protection
JPS62262463A (ja) * 1986-05-08 1987-11-14 Nec Corp 半導体装置
JPH02111073A (ja) * 1988-10-20 1990-04-24 Fujitsu Ltd 絶縁ゲート電界効果トランジスタおよびその集積回路装置

Also Published As

Publication number Publication date
JPH025302B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-01

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