JPS58118163A - 半導体放射線検出器 - Google Patents
半導体放射線検出器Info
- Publication number
- JPS58118163A JPS58118163A JP57000085A JP8582A JPS58118163A JP S58118163 A JPS58118163 A JP S58118163A JP 57000085 A JP57000085 A JP 57000085A JP 8582 A JP8582 A JP 8582A JP S58118163 A JPS58118163 A JP S58118163A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor
- radiation detector
- semiconductor radiation
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000085A JPS58118163A (ja) | 1982-01-05 | 1982-01-05 | 半導体放射線検出器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000085A JPS58118163A (ja) | 1982-01-05 | 1982-01-05 | 半導体放射線検出器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118163A true JPS58118163A (ja) | 1983-07-14 |
| JPH0436472B2 JPH0436472B2 (enrdf_load_stackoverflow) | 1992-06-16 |
Family
ID=11464295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000085A Granted JPS58118163A (ja) | 1982-01-05 | 1982-01-05 | 半導体放射線検出器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118163A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61221689A (ja) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | 放射線検出装置 |
| US4926052A (en) * | 1986-03-03 | 1990-05-15 | Kabushiki Kaisha Toshiba | Radiation detecting device |
-
1982
- 1982-01-05 JP JP57000085A patent/JPS58118163A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61221689A (ja) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | 放射線検出装置 |
| US4926052A (en) * | 1986-03-03 | 1990-05-15 | Kabushiki Kaisha Toshiba | Radiation detecting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0436472B2 (enrdf_load_stackoverflow) | 1992-06-16 |
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