JPS58118133A - 厚膜集積回路基板 - Google Patents

厚膜集積回路基板

Info

Publication number
JPS58118133A
JPS58118133A JP56213209A JP21320981A JPS58118133A JP S58118133 A JPS58118133 A JP S58118133A JP 56213209 A JP56213209 A JP 56213209A JP 21320981 A JP21320981 A JP 21320981A JP S58118133 A JPS58118133 A JP S58118133A
Authority
JP
Japan
Prior art keywords
thick film
integrated circuit
circuit board
film integrated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56213209A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6355794B2 (enrdf_load_stackoverflow
Inventor
Kazuyuki Nishimoto
西本　和幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56213209A priority Critical patent/JPS58118133A/ja
Publication of JPS58118133A publication Critical patent/JPS58118133A/ja
Publication of JPS6355794B2 publication Critical patent/JPS6355794B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components

Landscapes

  • Ceramic Capacitors (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP56213209A 1981-12-30 1981-12-30 厚膜集積回路基板 Granted JPS58118133A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56213209A JPS58118133A (ja) 1981-12-30 1981-12-30 厚膜集積回路基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56213209A JPS58118133A (ja) 1981-12-30 1981-12-30 厚膜集積回路基板

Publications (2)

Publication Number Publication Date
JPS58118133A true JPS58118133A (ja) 1983-07-14
JPS6355794B2 JPS6355794B2 (enrdf_load_stackoverflow) 1988-11-04

Family

ID=16635341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56213209A Granted JPS58118133A (ja) 1981-12-30 1981-12-30 厚膜集積回路基板

Country Status (1)

Country Link
JP (1) JPS58118133A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6355794B2 (enrdf_load_stackoverflow) 1988-11-04

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