JPS58114476A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS58114476A
JPS58114476A JP56209607A JP20960781A JPS58114476A JP S58114476 A JPS58114476 A JP S58114476A JP 56209607 A JP56209607 A JP 56209607A JP 20960781 A JP20960781 A JP 20960781A JP S58114476 A JPS58114476 A JP S58114476A
Authority
JP
Japan
Prior art keywords
region
layer
active layer
waveguide
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6328520B2 (zh
Inventor
Katsuyuki Uko
宇高　勝之
Kazuo Sakai
堺　和夫
Shigeyuki Akiba
重幸 秋葉
Yuichi Matsushima
松島　裕一
Yukitoshi Kushiro
久代　行俊
Yukio Noda
野田　行雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP56209607A priority Critical patent/JPS58114476A/ja
Publication of JPS58114476A publication Critical patent/JPS58114476A/ja
Publication of JPS6328520B2 publication Critical patent/JPS6328520B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP56209607A 1981-12-28 1981-12-28 半導体レ−ザ Granted JPS58114476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209607A JPS58114476A (ja) 1981-12-28 1981-12-28 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209607A JPS58114476A (ja) 1981-12-28 1981-12-28 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58114476A true JPS58114476A (ja) 1983-07-07
JPS6328520B2 JPS6328520B2 (zh) 1988-06-08

Family

ID=16575603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209607A Granted JPS58114476A (ja) 1981-12-28 1981-12-28 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58114476A (zh)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0510883A2 (en) * 1991-04-25 1992-10-28 AT&T Corp. Planar optical device
FR2684823A1 (fr) * 1991-12-04 1993-06-11 Alsthom Cge Alcatel Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.
WO1995023445A1 (en) * 1994-02-24 1995-08-31 British Telecommunications Public Limited Company Semiconductor device
US5574742A (en) * 1994-05-31 1996-11-12 Lucent Technologies Inc. Tapered beam expander waveguide integrated with a diode laser
US5985685A (en) * 1994-02-24 1999-11-16 British Telecommunications Public Limited Company Method for making optical device with composite passive and tapered active waveguide regions
JP2002519842A (ja) * 1998-06-24 2002-07-02 ザ トラスティーズ オブ プリンストン ユニバーシテイ フォトニック集積回路用の双導波管べースの設計
JP2009152605A (ja) * 2007-12-18 2009-07-09 Korea Electronics Telecommun 光増幅器が集積されたスーパーミネッセンスダイオード及びこれを利用した外部共振レーザー
JP2016146473A (ja) * 2015-01-27 2016-08-12 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． チューナブルレーザ、及びレーザをチューニングする方法
US20230275400A1 (en) * 2020-02-12 2023-08-31 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method for producing semiconductor optical device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183091A (en) * 1981-05-08 1982-11-11 Toshiba Corp Manufacture of optical integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183091A (en) * 1981-05-08 1982-11-11 Toshiba Corp Manufacture of optical integrated circuit

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0510883A2 (en) * 1991-04-25 1992-10-28 AT&T Corp. Planar optical device
FR2684823A1 (fr) * 1991-12-04 1993-06-11 Alsthom Cge Alcatel Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.
US5278926A (en) * 1991-12-04 1994-01-11 Alcatel Alsthom Compagnie Generale Widened output mode semiconductor optical component and method of fabricating it
AU692840B2 (en) * 1994-02-24 1998-06-18 Ipg Photonics Corporation Semiconductor device
WO1995023445A1 (en) * 1994-02-24 1995-08-31 British Telecommunications Public Limited Company Semiconductor device
US5985685A (en) * 1994-02-24 1999-11-16 British Telecommunications Public Limited Company Method for making optical device with composite passive and tapered active waveguide regions
US5574742A (en) * 1994-05-31 1996-11-12 Lucent Technologies Inc. Tapered beam expander waveguide integrated with a diode laser
US5720893A (en) * 1994-05-31 1998-02-24 Lucent Technologies Inc. Tapered beam expander waveguide integrated with a diode lasesr
JP2002519842A (ja) * 1998-06-24 2002-07-02 ザ トラスティーズ オブ プリンストン ユニバーシテイ フォトニック集積回路用の双導波管べースの設計
JP2009152605A (ja) * 2007-12-18 2009-07-09 Korea Electronics Telecommun 光増幅器が集積されたスーパーミネッセンスダイオード及びこれを利用した外部共振レーザー
JP2016146473A (ja) * 2015-01-27 2016-08-12 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． チューナブルレーザ、及びレーザをチューニングする方法
US9570886B2 (en) 2015-01-27 2017-02-14 Huawei Technologies Co., Ltd. Tunable laser and method of tuning a laser
US20230275400A1 (en) * 2020-02-12 2023-08-31 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method for producing semiconductor optical device

Also Published As

Publication number Publication date
JPS6328520B2 (zh) 1988-06-08

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