JPS58114467A - 高速ダイオ−ド - Google Patents
高速ダイオ−ドInfo
- Publication number
- JPS58114467A JPS58114467A JP56209910A JP20991081A JPS58114467A JP S58114467 A JPS58114467 A JP S58114467A JP 56209910 A JP56209910 A JP 56209910A JP 20991081 A JP20991081 A JP 20991081A JP S58114467 A JPS58114467 A JP S58114467A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- diode
- type layer
- reverse recovery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209910A JPS58114467A (ja) | 1981-12-28 | 1981-12-28 | 高速ダイオ−ド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209910A JPS58114467A (ja) | 1981-12-28 | 1981-12-28 | 高速ダイオ−ド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114467A true JPS58114467A (ja) | 1983-07-07 |
| JPH0234189B2 JPH0234189B2 (enExample) | 1990-08-01 |
Family
ID=16580671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56209910A Granted JPS58114467A (ja) | 1981-12-28 | 1981-12-28 | 高速ダイオ−ド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114467A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198778A (ja) * | 1984-03-23 | 1985-10-08 | Toshiba Corp | スイツチング素子 |
| JPS6388863A (ja) * | 1986-10-01 | 1988-04-19 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ |
| JPH0191475A (ja) * | 1987-10-02 | 1989-04-11 | Toyota Autom Loom Works Ltd | pn接合ダイオード |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044651C (zh) * | 1997-06-13 | 1999-08-11 | 清华大学 | 大功率软恢复隧道二极管管芯结构 |
| CN1044650C (zh) * | 1997-06-13 | 1999-08-11 | 清华大学 | 大功率快速软恢复二极管管芯结构 |
-
1981
- 1981-12-28 JP JP56209910A patent/JPS58114467A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198778A (ja) * | 1984-03-23 | 1985-10-08 | Toshiba Corp | スイツチング素子 |
| JPS6388863A (ja) * | 1986-10-01 | 1988-04-19 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ |
| JPH0191475A (ja) * | 1987-10-02 | 1989-04-11 | Toyota Autom Loom Works Ltd | pn接合ダイオード |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0234189B2 (enExample) | 1990-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3550260A (en) | Method for making a hot carrier pn-diode | |
| US3159780A (en) | Semiconductor bridge rectifier | |
| US3538401A (en) | Drift field thyristor | |
| US3356543A (en) | Method of decreasing the minority carrier lifetime by diffusion | |
| US4901120A (en) | Structure for fast-recovery bipolar devices | |
| US3549961A (en) | Triac structure and method of manufacture | |
| US3634739A (en) | Thyristor having at least four semiconductive regions and method of making the same | |
| US3470036A (en) | Rectifying semi-conductor body | |
| JPS58114467A (ja) | 高速ダイオ−ド | |
| JPH023266A (ja) | 導電性再結合層を有するバイポーラ半導体デバイス | |
| US3443175A (en) | Pn-junction semiconductor with polycrystalline layer on one region | |
| US3445301A (en) | Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer | |
| JP3072753B2 (ja) | 半導体装置及び製造方法 | |
| JPS58114468A (ja) | 高速ダイオ−ド | |
| KR930003555B1 (ko) | 반도체 장치의 제조방법 | |
| US3500141A (en) | Transistor structure | |
| US3082127A (en) | Fabrication of pn junction devices | |
| US3277351A (en) | Method of manufacturing semiconductor devices | |
| US3688164A (en) | Multi-layer-type switch device | |
| JPH0276265A (ja) | 高速ダイオードの製造方法 | |
| JPS63262870A (ja) | ゲート遮断サイリスタ及びその製造方法 | |
| JPH08186277A (ja) | 高速ダイオードの製造方法 | |
| JPS5833875A (ja) | 高速ダイオ−ド | |
| JPH02105465A (ja) | ショットキバリア半導体装置 | |
| JPH025307B2 (enExample) |