JPS58114467A - 高速ダイオ−ド - Google Patents

高速ダイオ−ド

Info

Publication number
JPS58114467A
JPS58114467A JP56209910A JP20991081A JPS58114467A JP S58114467 A JPS58114467 A JP S58114467A JP 56209910 A JP56209910 A JP 56209910A JP 20991081 A JP20991081 A JP 20991081A JP S58114467 A JPS58114467 A JP S58114467A
Authority
JP
Japan
Prior art keywords
layer
thickness
diode
type layer
reverse recovery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209910A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234189B2 (enExample
Inventor
Kimihiro Muraoka
公裕 村岡
Makoto Iguchi
井口 信
Sozaburo Hotta
宗三郎 堀田
Naohiro Shimizu
尚博 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Denki Seizo KK, Toyo Electric Manufacturing Ltd filed Critical Toyo Denki Seizo KK
Priority to JP56209910A priority Critical patent/JPS58114467A/ja
Publication of JPS58114467A publication Critical patent/JPS58114467A/ja
Publication of JPH0234189B2 publication Critical patent/JPH0234189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/50PIN diodes 

Landscapes

  • Thyristors (AREA)
JP56209910A 1981-12-28 1981-12-28 高速ダイオ−ド Granted JPS58114467A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209910A JPS58114467A (ja) 1981-12-28 1981-12-28 高速ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209910A JPS58114467A (ja) 1981-12-28 1981-12-28 高速ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS58114467A true JPS58114467A (ja) 1983-07-07
JPH0234189B2 JPH0234189B2 (enExample) 1990-08-01

Family

ID=16580671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209910A Granted JPS58114467A (ja) 1981-12-28 1981-12-28 高速ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS58114467A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198778A (ja) * 1984-03-23 1985-10-08 Toshiba Corp スイツチング素子
JPS6388863A (ja) * 1986-10-01 1988-04-19 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPH0191475A (ja) * 1987-10-02 1989-04-11 Toyota Autom Loom Works Ltd pn接合ダイオード

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1044651C (zh) * 1997-06-13 1999-08-11 清华大学 大功率软恢复隧道二极管管芯结构
CN1044650C (zh) * 1997-06-13 1999-08-11 清华大学 大功率快速软恢复二极管管芯结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198778A (ja) * 1984-03-23 1985-10-08 Toshiba Corp スイツチング素子
JPS6388863A (ja) * 1986-10-01 1988-04-19 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
JPH0191475A (ja) * 1987-10-02 1989-04-11 Toyota Autom Loom Works Ltd pn接合ダイオード

Also Published As

Publication number Publication date
JPH0234189B2 (enExample) 1990-08-01

Similar Documents

Publication Publication Date Title
US3550260A (en) Method for making a hot carrier pn-diode
US3159780A (en) Semiconductor bridge rectifier
US3538401A (en) Drift field thyristor
US3356543A (en) Method of decreasing the minority carrier lifetime by diffusion
US4901120A (en) Structure for fast-recovery bipolar devices
US3549961A (en) Triac structure and method of manufacture
US3634739A (en) Thyristor having at least four semiconductive regions and method of making the same
US3470036A (en) Rectifying semi-conductor body
JPS58114467A (ja) 高速ダイオ−ド
JPH023266A (ja) 導電性再結合層を有するバイポーラ半導体デバイス
US3443175A (en) Pn-junction semiconductor with polycrystalline layer on one region
US3445301A (en) Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
JP3072753B2 (ja) 半導体装置及び製造方法
JPS58114468A (ja) 高速ダイオ−ド
KR930003555B1 (ko) 반도체 장치의 제조방법
US3500141A (en) Transistor structure
US3082127A (en) Fabrication of pn junction devices
US3277351A (en) Method of manufacturing semiconductor devices
US3688164A (en) Multi-layer-type switch device
JPH0276265A (ja) 高速ダイオードの製造方法
JPS63262870A (ja) ゲート遮断サイリスタ及びその製造方法
JPH08186277A (ja) 高速ダイオードの製造方法
JPS5833875A (ja) 高速ダイオ−ド
JPH02105465A (ja) ショットキバリア半導体装置
JPH025307B2 (enExample)