JPS58114458A - 絶縁基板上の薄膜トランジスタの製造方法 - Google Patents

絶縁基板上の薄膜トランジスタの製造方法

Info

Publication number
JPS58114458A
JPS58114458A JP57225106A JP22510682A JPS58114458A JP S58114458 A JPS58114458 A JP S58114458A JP 57225106 A JP57225106 A JP 57225106A JP 22510682 A JP22510682 A JP 22510682A JP S58114458 A JPS58114458 A JP S58114458A
Authority
JP
Japan
Prior art keywords
coating
silicon
metal
depositing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57225106A
Other languages
English (en)
Japanese (ja)
Inventor
フラスワ・モリン
ジヤン−ルカ・フアヴアネ
マデレイン・ボネ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPS58114458A publication Critical patent/JPS58114458A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
JP57225106A 1981-12-23 1982-12-23 絶縁基板上の薄膜トランジスタの製造方法 Pending JPS58114458A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8124118A FR2518810A1 (fr) 1981-12-23 1981-12-23 Procede de fabrication de transistors en couches minces en silicium sur substrat isolant
FR8124118 1981-12-23

Publications (1)

Publication Number Publication Date
JPS58114458A true JPS58114458A (ja) 1983-07-07

Family

ID=9265340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57225106A Pending JPS58114458A (ja) 1981-12-23 1982-12-23 絶縁基板上の薄膜トランジスタの製造方法

Country Status (6)

Country Link
US (1) US4426407A (enExample)
EP (1) EP0082783B1 (enExample)
JP (1) JPS58114458A (enExample)
CA (1) CA1200324A (enExample)
DE (1) DE3267467D1 (enExample)
FR (1) FR2518810A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178166A (ja) * 1984-09-25 1986-04-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタ−アレ−とその製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2571893B2 (fr) * 1982-09-14 1986-12-26 France Etat Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
US4689116A (en) * 1984-10-17 1987-08-25 L'etat Francais Represented By The Minister Of Ptt (Centre National D'etudes Des Telecommunications) Process for fabricating electronic circuits based on thin-film transistors and capacitors
US4680085A (en) * 1986-04-14 1987-07-14 Ovonic Imaging Systems, Inc. Method of forming thin film semiconductor devices
US5152866A (en) * 1989-01-13 1992-10-06 Hughes Aircraft Company Plasma/radiation assisted molecular beam epitaxy method
JP3189990B2 (ja) * 1991-09-27 2001-07-16 キヤノン株式会社 電子回路装置
FR2687844A1 (fr) * 1992-02-26 1993-08-27 Chouan Yannick Procede de fabrication d'un transistor en couches minces a double grille et a masque optique.
US6232947B1 (en) 1994-03-15 2001-05-15 Canon Kabushiki Kaisha Video information display system including a reflective type active matrix addressed liquid crystal display and method for synthetically combining and editing data
GB9626344D0 (en) * 1996-12-19 1997-02-05 Philips Electronics Nv Electronic devices and their manufacture
US6991973B2 (en) 2002-09-26 2006-01-31 National Chiao Tung University Manufacturing method of thin film transistor
US20040063311A1 (en) * 2002-09-26 2004-04-01 National Chiao Tung University Structure of thin film transistor and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads
IT1111823B (it) * 1978-03-17 1986-01-13 Rca Corp Dispositivo mosfet a bassa resistenza superficiale e metodo di fabbricazione dello stesso
US4263058A (en) 1979-06-11 1981-04-21 General Electric Company Composite conductive structures in integrated circuits and method of making same
FR2459551A1 (fr) 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
DE2926874A1 (de) 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4276688A (en) 1980-01-21 1981-07-07 Rca Corporation Method for forming buried contact complementary MOS devices
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
US4378628A (en) 1981-08-27 1983-04-05 Bell Telephone Laboratories, Incorporated Cobalt silicide metallization for semiconductor integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178166A (ja) * 1984-09-25 1986-04-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタ−アレ−とその製造方法

Also Published As

Publication number Publication date
CA1200324A (en) 1986-02-04
EP0082783A3 (en) 1983-08-03
FR2518810B1 (enExample) 1984-04-06
EP0082783B1 (fr) 1985-11-13
EP0082783A2 (fr) 1983-06-29
FR2518810A1 (fr) 1983-06-24
DE3267467D1 (en) 1985-12-19
US4426407A (en) 1984-01-17

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