JPS58114425A - 電子ビ−ム露光方法 - Google Patents
電子ビ−ム露光方法Info
- Publication number
- JPS58114425A JPS58114425A JP20976281A JP20976281A JPS58114425A JP S58114425 A JPS58114425 A JP S58114425A JP 20976281 A JP20976281 A JP 20976281A JP 20976281 A JP20976281 A JP 20976281A JP S58114425 A JPS58114425 A JP S58114425A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- deflection
- correction coefficient
- exposure
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20976281A JPS58114425A (ja) | 1981-12-28 | 1981-12-28 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20976281A JPS58114425A (ja) | 1981-12-28 | 1981-12-28 | 電子ビ−ム露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114425A true JPS58114425A (ja) | 1983-07-07 |
| JPS6234134B2 JPS6234134B2 (enExample) | 1987-07-24 |
Family
ID=16578204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20976281A Granted JPS58114425A (ja) | 1981-12-28 | 1981-12-28 | 電子ビ−ム露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114425A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214342A (ja) * | 1985-03-19 | 1986-09-24 | Nippon Kogaku Kk <Nikon> | 荷電粒子ビ−ム偏向回路 |
| JPS6265419A (ja) * | 1985-09-18 | 1987-03-24 | Fujitsu Ltd | 電子ビ−ム露光方法 |
| JP2009016647A (ja) * | 2007-07-06 | 2009-01-22 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP2009038345A (ja) * | 2007-07-12 | 2009-02-19 | Nuflare Technology Inc | 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置 |
| JP2012231188A (ja) * | 2012-08-29 | 2012-11-22 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0530435U (ja) * | 1991-09-27 | 1993-04-23 | 株式会社クボタ | 過給機付きデイーゼルエンジンのブーストコンペンセータ |
| JPH0530436U (ja) * | 1991-09-27 | 1993-04-23 | 株式会社クボタ | 過給機付きデイーゼルエンジンのブーストコンペンセータ |
| JP2016225357A (ja) | 2015-05-27 | 2016-12-28 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5311832A (en) * | 1976-07-20 | 1978-02-02 | Ishikawajima Harima Heavy Ind | Method and device for gas cutting in continuous casting equipment |
| JPS5452987A (en) * | 1977-10-05 | 1979-04-25 | Fujitsu Ltd | Electron beam exposure device |
| JPS5640244A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Beam scanning correction at electron beam exposure |
| JPS57646A (en) * | 1980-06-03 | 1982-01-05 | Konishiroku Photo Ind Co Ltd | Film type leader strip for discrimination of characteristics |
-
1981
- 1981-12-28 JP JP20976281A patent/JPS58114425A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5311832A (en) * | 1976-07-20 | 1978-02-02 | Ishikawajima Harima Heavy Ind | Method and device for gas cutting in continuous casting equipment |
| JPS5452987A (en) * | 1977-10-05 | 1979-04-25 | Fujitsu Ltd | Electron beam exposure device |
| JPS5640244A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Beam scanning correction at electron beam exposure |
| JPS57646A (en) * | 1980-06-03 | 1982-01-05 | Konishiroku Photo Ind Co Ltd | Film type leader strip for discrimination of characteristics |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214342A (ja) * | 1985-03-19 | 1986-09-24 | Nippon Kogaku Kk <Nikon> | 荷電粒子ビ−ム偏向回路 |
| JPS6265419A (ja) * | 1985-09-18 | 1987-03-24 | Fujitsu Ltd | 電子ビ−ム露光方法 |
| JP2009016647A (ja) * | 2007-07-06 | 2009-01-22 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP2009038345A (ja) * | 2007-07-12 | 2009-02-19 | Nuflare Technology Inc | 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置 |
| JP2012231188A (ja) * | 2012-08-29 | 2012-11-22 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6234134B2 (enExample) | 1987-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000100362A (ja) | 荷電粒子ビーム走査式自動検査装置 | |
| JP2008085120A (ja) | 荷電粒子ビーム描画装置の位置補正係数算出方法及び荷電粒子ビーム描画装置の位置補正係数更新方法 | |
| KR930003134B1 (ko) | 전자비임 노광(露光)방법과 그의 장치 | |
| JPS58114425A (ja) | 電子ビ−ム露光方法 | |
| US5329130A (en) | Charged particle beam exposure method and apparatus | |
| JP3335011B2 (ja) | マスク及びこれを用いる荷電粒子ビーム露光方法 | |
| JPH0691005B2 (ja) | 荷電ビ−ム描画方法 | |
| JPH0352210B2 (enExample) | ||
| US6177680B1 (en) | Correction of pattern-dependent errors in a particle beam lithography system | |
| JP2009088213A (ja) | 描画装置及び描画時間の取得方法 | |
| JPH1069056A (ja) | 露光用設計パターンの修正方法 | |
| JPH10256122A (ja) | パターン形成装置 | |
| JP3518400B2 (ja) | 電子線描画装置および電子線を用いた描画方法 | |
| JP2907527B2 (ja) | 荷電粒子ビーム露光装置および露光方法 | |
| JPS59178726A (ja) | パタ−ン転写用マスクの製造方法 | |
| JP3168590B2 (ja) | 縮小投影露光方法 | |
| JP2894746B2 (ja) | 荷電ビーム描画方法 | |
| JPS63308317A (ja) | 荷電ビ−ム露光装置 | |
| JP6040046B2 (ja) | 荷電粒子ビーム描画装置、および荷電粒子ビーム描画方法 | |
| US20070020537A1 (en) | Exposure apparatus correction system, exposure apparatus correcting method, and manufacturing method of semiconductor device | |
| JPS62149126A (ja) | 荷電ビ−ム露光方法 | |
| JP3330306B2 (ja) | 荷電ビーム描画方法 | |
| JPH07111943B2 (ja) | 電子ビ−ム露光装置 | |
| CN101689028A (zh) | 图案数据的处理方法以及电子器件的制造方法 | |
| JPH04245616A (ja) | 電子線描画装置 |