JPS58114419A - 半導体装置用基板の製造方法 - Google Patents

半導体装置用基板の製造方法

Info

Publication number
JPS58114419A
JPS58114419A JP20977181A JP20977181A JPS58114419A JP S58114419 A JPS58114419 A JP S58114419A JP 20977181 A JP20977181 A JP 20977181A JP 20977181 A JP20977181 A JP 20977181A JP S58114419 A JPS58114419 A JP S58114419A
Authority
JP
Japan
Prior art keywords
substrate
window
film
single crystal
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20977181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347253B2 (cs
Inventor
Haruhisa Mori
森　治久
Hajime Kamioka
上岡　元
Junji Sakurai
桜井　潤治
Seiichiro Kawamura
河村　誠一郎
Motoo Nakano
元雄 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20977181A priority Critical patent/JPS58114419A/ja
Publication of JPS58114419A publication Critical patent/JPS58114419A/ja
Publication of JPS6347253B2 publication Critical patent/JPS6347253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP20977181A 1981-12-28 1981-12-28 半導体装置用基板の製造方法 Granted JPS58114419A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20977181A JPS58114419A (ja) 1981-12-28 1981-12-28 半導体装置用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20977181A JPS58114419A (ja) 1981-12-28 1981-12-28 半導体装置用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS58114419A true JPS58114419A (ja) 1983-07-07
JPS6347253B2 JPS6347253B2 (cs) 1988-09-21

Family

ID=16578332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20977181A Granted JPS58114419A (ja) 1981-12-28 1981-12-28 半導体装置用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS58114419A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125122A (ja) * 1984-11-22 1986-06-12 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
JPS63182809A (ja) * 1987-01-26 1988-07-28 Canon Inc 結晶基材の製造方法
JPS63182810A (ja) * 1987-01-26 1988-07-28 Canon Inc 結晶基材の製造方法
US5079183A (en) * 1983-07-15 1992-01-07 Kabushiki Kaisha Toshiba C-mos device and a process for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079183A (en) * 1983-07-15 1992-01-07 Kabushiki Kaisha Toshiba C-mos device and a process for manufacturing the same
JPS61125122A (ja) * 1984-11-22 1986-06-12 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
JPS63182809A (ja) * 1987-01-26 1988-07-28 Canon Inc 結晶基材の製造方法
JPS63182810A (ja) * 1987-01-26 1988-07-28 Canon Inc 結晶基材の製造方法

Also Published As

Publication number Publication date
JPS6347253B2 (cs) 1988-09-21

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