JPS5810852B2 - Titanium sun bismuth etching exhaust - Google Patents
Titanium sun bismuth etching exhaustInfo
- Publication number
- JPS5810852B2 JPS5810852B2 JP2878074A JP2878074A JPS5810852B2 JP S5810852 B2 JPS5810852 B2 JP S5810852B2 JP 2878074 A JP2878074 A JP 2878074A JP 2878074 A JP2878074 A JP 2878074A JP S5810852 B2 JPS5810852 B2 JP S5810852B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- bismuth
- bismuth titanate
- etching exhaust
- titanium sun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
この発明バチタン酸ビスマス特に非晶質チタン酸ビスマ
スのエツチング液に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an etching solution for bismuth batitate, particularly amorphous bismuth titanate.
従来、単結晶チタン酸ビスマスに対しては、塩酸や硝酸
の単独液がエツチング液として使用されてきた。Conventionally, a single solution of hydrochloric acid or nitric acid has been used as an etching solution for single crystal bismuth titanate.
単結晶チタン酸ビスマスには有効なこれラノエッチング
液も、非晶質のチタン酸ビスマスに対しては、エツチン
グ速度が速すぎるために、エツチング速度を十分に制御
することが困難であり、またエツチング速度が個所によ
り不均一になるなど欠点があり、かつそれに代る優秀な
エツチング液は知られていなかった。This lano-etching solution, which is effective for single-crystal bismuth titanate, is too fast for amorphous bismuth titanate, making it difficult to control the etching rate sufficiently. It has drawbacks such as non-uniform etching speed depending on the location, and no superior etching solution has been known to replace it.
この発明は、たとえば半導体装置の製造工程など他の複
雑な工程と組み合わせた条件の下でもエツチングにより
得られるチタン酸ビスマス部の形状がだれることなく鋭
く切られ、かつ全体的に平滑ニエッチングすることので
きる優れた非晶質チタン酸ビスマスのエツチング液を提
供するものである。This invention enables the shape of the bismuth titanate portion obtained by etching to be sharply cut without sagging even under conditions in combination with other complicated processes such as the manufacturing process of semiconductor devices, and to etch the etched portion smoothly as a whole. The present invention provides an excellent etching solution for amorphous bismuth titanate.
次に本発明を実施の一例として、半導体にシリコンを用
い、シリコン基板上に形成した非晶質チタン酸ビスマス
を絶縁ゲートとする絶縁ゲート電界効果型トランジスタ
を製造する場合をとりあげて説明する。Next, as an example of implementing the present invention, a case will be described in which an insulated gate field effect transistor is manufactured using silicon as a semiconductor and having an insulated gate made of amorphous bismuth titanate formed on a silicon substrate.
絶縁ゲート部分をフォトレジストで覆い、他の部分の非
晶質チタン酸ビスマスをエツチングする必要がある。It is necessary to cover the insulated gate area with photoresist and etch away the amorphous bismuth titanate in other areas.
エツチング液として、容積比にして、水１００、濃度７
０％の硝酸１０、濃度４９％の弗酸２の混合液を用いる
と、膜厚１．２μｍの非晶質チタン酸ビスマスに対して
、常温で２３〜２４秒でエツチングの終点となる。As an etching solution, water is 100% by volume and concentration is 7.
When a mixed solution of 0% nitric acid 10 and 49% hydrofluoric acid 2 is used, etching of amorphous bismuth titanate with a film thickness of 1.2 μm is completed in 23 to 24 seconds at room temperature.
この条件下でのエツチング速度は５４０Ａ°／秒でオー
バーエツチングされることはなく、またエツチング面の
切れが鋭く、基板全面が均一性よく平滑にエツチングさ
れていた。The etching rate under these conditions was 540 A°/sec, and there was no overetching, and the etched surface was sharp and the entire surface of the substrate was etched uniformly and smoothly.
図には水１００、濃度４９係の弗酸２に附加する濃度７
０係の硝酸の容積比をＺとし、Ｚを変化させた時の室温
におけるエツチング速度Ｒの変化を示している。The figure shows water at 100% and concentration 7 added to hydrofluoric acid 2 at a concentration of 49.
The volume ratio of 0-coefficient nitric acid is defined as Z, and the change in the etching rate R at room temperature when Z is changed is shown.
Ｚが５より小さくなると、エツチング速度が遅くなるこ
とに加工、更にチタン酸ビスマス膜が剥れてしまう傾向
があり好ましくない。If Z is less than 5, the etching rate becomes slow, processing is difficult, and the bismuth titanate film tends to peel off, which is not preferable.
また２が３０より大きくなると、エツチング速度が極め
て速くなり、オーバーエツチングを起すなど制御が困難
になることに加えて、気泡が多く発生し、その上この気
泡が局部的に集中して基板上に残存するため所望の形状
のチタン酸ビスマスを得ることが困難となる。If 2 is larger than 30, the etching speed becomes extremely high, which causes over-etching and becomes difficult to control. In addition, a large number of bubbles are generated, and furthermore, these bubbles are locally concentrated and form on the substrate. Because of this residual content, it becomes difficult to obtain bismuth titanate in a desired shape.
図は、水１００、弗酸２に附加する硝酸の割合を変化さ
せたときの室温におけるエツチング速度の変化を示すも
のである。The figure shows the change in etching rate at room temperature when the ratio of nitric acid added to 100 parts of water and 2 parts of hydrofluoric acid was changed.
Claims (1)
を混合してなる非晶質チタン酸ビスマスのエツチング液
。1 Volume ratio: 100 parts water, 5 to 30 parts nitric acid, 2 parts hydrofluoric acid
Etching liquid of amorphous bismuth titanate made by mixing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2878074A JPS5810852B2 (en) | 1974-03-13 | 1974-03-13 | Titanium sun bismuth etching exhaust |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2878074A JPS5810852B2 (en) | 1974-03-13 | 1974-03-13 | Titanium sun bismuth etching exhaust |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50122477A JPS50122477A (en) | 1975-09-26 |
| JPS5810852B2 true JPS5810852B2 (en) | 1983-02-28 |
Family
ID=12257907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2878074A Expired JPS5810852B2 (en) | 1974-03-13 | 1974-03-13 | Titanium sun bismuth etching exhaust |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5810852B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968979A1 (en) * | 1998-06-30 | 2000-01-05 | Siemens Aktiengesellschaft | Etching of Bi-based metal oxides ceramics |
-
1974
- 1974-03-13 JP JP2878074A patent/JPS5810852B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968979A1 (en) * | 1998-06-30 | 2000-01-05 | Siemens Aktiengesellschaft | Etching of Bi-based metal oxides ceramics |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50122477A (en) | 1975-09-26 |
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