JPS58106851A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58106851A
JPS58106851A JP56204812A JP20481281A JPS58106851A JP S58106851 A JPS58106851 A JP S58106851A JP 56204812 A JP56204812 A JP 56204812A JP 20481281 A JP20481281 A JP 20481281A JP S58106851 A JPS58106851 A JP S58106851A
Authority
JP
Japan
Prior art keywords
resin
impurity ions
rays
semiconductor
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56204812A
Other languages
English (en)
Inventor
Takashi Ito
隆 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56204812A priority Critical patent/JPS58106851A/ja
Publication of JPS58106851A publication Critical patent/JPS58106851A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は,樹脂刺止形の半導体i!甑に関するものであ
る。
半導体装−の封止容器として,樹脂刺止形は気!!I封
止形に比べ,経済性,量産性にすぐれていることから,
最も広く利用されてきた。
しかしながら、この樹脂刺止形半導体装置の欠点のひと
つとして,封止樹脂中に含まれる不純物イオンが、半導
体素子特性の経時変化、及び耐湿性低下の要因になると
いう問題かあった。
さらに、不純物イオンのみならず、微量に含まれゐウラ
ン,トリウムが放出するa線が半導体素子を誤動作させ
るという問題が近年明らかにされていゐ。
一方,半導体素子の中でもUV−FROMと呼けれゐ紫
外線消去形の記憶素子(以下UV−FROMと記す)K
ついては、素子面に紫外碧を照射する必要上、樹脂封止
容儀は適用できなかった。
本発明は,上記のような不純物イオン及びα線κよる悪
影勢が半導体素子に及ばないような樹脂刺止1鴫並びに
UV−FROMに適用可能な樹脂封止容儀を提供するこ
とを目的とする。
本発明の4I像は,樹脂封止形半導体装置の、チップ周
囲を覆う樹脂において、特に半導体チップ上部を覆う樹
脂全体が、他の部分の樹脂と異なラ九樹詣で構成されて
いる半導体装置にある。
次κ本発明の構成を図κ従って説明する。
第1図は、本発明の第1の実施例を示す断面図である。
図において、lで示される部分は従来のエポキシ尋の樹
脂がその11使用されているが、4で示されるところの
チップ周囲と上部分が、1と異な)、イオン性不純物及
び放射縁を放出するウラン・トリウムを取多除いた高純
度樹脂で形成されたものである。この高純度樹脂が素子
と通常樹脂の間に存在して両者を分離しているため、素
子への不純物イオンやa線の侵入が遮断されることにな
る。
次に第2図は本発明の第2の実施例を示す断面図である
。第1図と同様に1で示される部分は通常樹脂であるの
に対し、5で示されるチップ上部分が充分な透wA度を
有する樹脂になった構造をしている@この[2の実施例
において社、装置外部の紫外線は素子面まで達すること
ができ、UV−PROMの封止容器として利用できる。
以上説明してきたように、本発明によれば、従来の樹脂
封止形容番の欠点であった不純物イオンによる半導体素
子特性の経時変化及び耐湿性低下と−11による一動作
が解消されるとともに、従来の樹脂刺止容儀では実現で
ti危かったUV−PROMの封止が可能となる。
【図面の簡単な説明】
館1図は本発明の第10寮施例を示す断面図であ夛、第
2図は第2の実施例を示す断面図である。 尚、図において、1は従来の封止樹脂、2けリード、3
は半導体案子、4は高lR,f樹脂、5は透明な樹脂で
ある。

Claims (1)

    【特許請求の範囲】
  1. 樹脂刺止形半導体装置の半導体チップ上部を覆う樹脂全
    体が他の部分の樹脂と異な−)た樹脂で構成されている
    ことを轡像とする半導体装置。
JP56204812A 1981-12-18 1981-12-18 半導体装置 Pending JPS58106851A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56204812A JPS58106851A (ja) 1981-12-18 1981-12-18 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204812A JPS58106851A (ja) 1981-12-18 1981-12-18 半導体装置

Publications (1)

Publication Number Publication Date
JPS58106851A true JPS58106851A (ja) 1983-06-25

Family

ID=16496776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204812A Pending JPS58106851A (ja) 1981-12-18 1981-12-18 半導体装置

Country Status (1)

Country Link
JP (1) JPS58106851A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0175488A2 (en) * 1984-08-20 1986-03-26 Oki Electric Industry Company, Limited EPROM device
EP0175489A2 (en) * 1984-08-20 1986-03-26 Oki Electric Industry Company, Limited An eprom device and method of manufacturing same
JPS6177992A (ja) * 1984-09-25 1986-04-21 Kyodo Printing Co Ltd Icカ−ド
US4707725A (en) * 1985-09-30 1987-11-17 Mitsubishi Denki Kabushiki Kaisha Fluorescent coating for uv sensitive semiconductor device
US5863810A (en) * 1994-05-09 1999-01-26 Euratec B.V. Method for encapsulating an integrated circuit having a window
US6093576A (en) * 1995-08-29 2000-07-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor sensor and manufacturing method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0175488A2 (en) * 1984-08-20 1986-03-26 Oki Electric Industry Company, Limited EPROM device
EP0175489A2 (en) * 1984-08-20 1986-03-26 Oki Electric Industry Company, Limited An eprom device and method of manufacturing same
US4723156A (en) * 1984-08-20 1988-02-02 Oki Electric Industry Co., Ltd. EPROM device and a manufacturing method thereof
US4801998A (en) * 1984-08-20 1989-01-31 Oki Electric Industry Co., Ltd. EPROM device
JPS6177992A (ja) * 1984-09-25 1986-04-21 Kyodo Printing Co Ltd Icカ−ド
JPH0426157B2 (ja) * 1984-09-25 1992-05-06 Kyodo Printing Co Ltd
US4707725A (en) * 1985-09-30 1987-11-17 Mitsubishi Denki Kabushiki Kaisha Fluorescent coating for uv sensitive semiconductor device
US5863810A (en) * 1994-05-09 1999-01-26 Euratec B.V. Method for encapsulating an integrated circuit having a window
US6093576A (en) * 1995-08-29 2000-07-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor sensor and manufacturing method thereof

Similar Documents

Publication Publication Date Title
US4661837A (en) Resin-sealed radiation shield for a semiconductor device
JPS58106851A (ja) 半導体装置
US4707725A (en) Fluorescent coating for uv sensitive semiconductor device
US5150180A (en) Packaged semiconductor device with high energy radiation absorbent glass
US4460915A (en) Plastic package for radiation sensitive semiconductor devices
JPS628032B2 (ja)
JPH0117257B2 (ja)
JPS5845186B2 (ja) 半導体装置
JPS58222546A (ja) 半導体装置
KR900007758B1 (ko) 반도체 장치
JPS60134448A (ja) 半導体装置用パツケ−ジ
JPH06268088A (ja) 半導体装置
JPS5942983B2 (ja) 半導体装置
JPS55133557A (en) Semiconductor device
JPH01300547A (ja) 耐放射線性パッケージ
JPH0364076A (ja) 透明モールドパッケージ
JPS5817642A (ja) 半導体デバイス用保護装置
JPH03208364A (ja) 半導体パッケージ
JPS63213373A (ja) 光半導体デバイス
JPS6028149B2 (ja) フオトダイオ−ド
JPS5893359A (ja) 半導体装置
JPS6028139Y2 (ja) 半導体装置
JPS5815259A (ja) 集積回路パツケ−ジ
JPS61127154A (ja) 樹脂封止半導体装置の製造方法
JPS61283148A (ja) 半導体メモリパツケ−ジ装置