JPS58102552A - 薄膜トランジスタマトリツクスアレイ - Google Patents

薄膜トランジスタマトリツクスアレイ

Info

Publication number
JPS58102552A
JPS58102552A JP56201240A JP20124081A JPS58102552A JP S58102552 A JPS58102552 A JP S58102552A JP 56201240 A JP56201240 A JP 56201240A JP 20124081 A JP20124081 A JP 20124081A JP S58102552 A JPS58102552 A JP S58102552A
Authority
JP
Japan
Prior art keywords
thin film
film transistor
matrix array
transistor matrix
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56201240A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262474B2 (enrdf_load_stackoverflow
Inventor
Satoru Kawai
悟 川井
Toshiro Kodama
敏郎 児玉
Nobuyoshi Takagi
高城　信義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56201240A priority Critical patent/JPS58102552A/ja
Publication of JPS58102552A publication Critical patent/JPS58102552A/ja
Publication of JPS6262474B2 publication Critical patent/JPS6262474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56201240A 1981-12-14 1981-12-14 薄膜トランジスタマトリツクスアレイ Granted JPS58102552A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56201240A JPS58102552A (ja) 1981-12-14 1981-12-14 薄膜トランジスタマトリツクスアレイ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56201240A JPS58102552A (ja) 1981-12-14 1981-12-14 薄膜トランジスタマトリツクスアレイ

Publications (2)

Publication Number Publication Date
JPS58102552A true JPS58102552A (ja) 1983-06-18
JPS6262474B2 JPS6262474B2 (enrdf_load_stackoverflow) 1987-12-26

Family

ID=16437655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56201240A Granted JPS58102552A (ja) 1981-12-14 1981-12-14 薄膜トランジスタマトリツクスアレイ

Country Status (1)

Country Link
JP (1) JPS58102552A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189265A (ja) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd 薄膜電界効果型半導体装置
FR2601801A1 (fr) * 1986-07-16 1988-01-22 Morin Francois Ecran d'affichage a matrice active utilisant du carbure de silicium amorphe hydrogene et procede de fabrication de cet ecran

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189265A (ja) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd 薄膜電界効果型半導体装置
FR2601801A1 (fr) * 1986-07-16 1988-01-22 Morin Francois Ecran d'affichage a matrice active utilisant du carbure de silicium amorphe hydrogene et procede de fabrication de cet ecran

Also Published As

Publication number Publication date
JPS6262474B2 (enrdf_load_stackoverflow) 1987-12-26

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