JPS58100684A - ドライ・エツチング方法 - Google Patents
ドライ・エツチング方法Info
- Publication number
- JPS58100684A JPS58100684A JP20598182A JP20598182A JPS58100684A JP S58100684 A JPS58100684 A JP S58100684A JP 20598182 A JP20598182 A JP 20598182A JP 20598182 A JP20598182 A JP 20598182A JP S58100684 A JPS58100684 A JP S58100684A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- plasma
- etch rate
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 33
- 238000001312 dry etching Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000001020 plasma etching Methods 0.000 claims abstract description 15
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 10
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 9
- 238000000992 sputter etching Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 47
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 6
- 239000011630 iodine Substances 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- 125000001246 bromo group Chemical group Br* 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 239000002131 composite material Substances 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 46
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- -1 OFn bombard 5i11o Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 210000004907 gland Anatomy 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 229920004449 Halon® Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HYXIRBXTCCZCQG-UHFFFAOYSA-J [C+4].[F-].[F-].[F-].[F-] Chemical compound [C+4].[F-].[F-].[F-].[F-] HYXIRBXTCCZCQG-UHFFFAOYSA-J 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20598182A JPS58100684A (ja) | 1982-11-26 | 1982-11-26 | ドライ・エツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20598182A JPS58100684A (ja) | 1982-11-26 | 1982-11-26 | ドライ・エツチング方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4531979A Division JPS55138834A (en) | 1979-04-16 | 1979-04-16 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100684A true JPS58100684A (ja) | 1983-06-15 |
| JPH0363209B2 JPH0363209B2 (enrdf_load_stackoverflow) | 1991-09-30 |
Family
ID=16515916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20598182A Granted JPS58100684A (ja) | 1982-11-26 | 1982-11-26 | ドライ・エツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100684A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261835A (ja) * | 1987-04-20 | 1988-10-28 | Fujitsu Ltd | 電極・配線形成方法 |
| JPS63278339A (ja) * | 1986-12-19 | 1988-11-16 | アプライド マテリアルズインコーポレーテッド | シリコンおよび珪化物のための臭素およびヨウ素エッチング方法 |
| WO1989003402A1 (en) * | 1987-10-07 | 1989-04-20 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
| JPH0286126A (ja) * | 1988-07-11 | 1990-03-27 | Philips Gloeilampenfab:Nv | 臭化水素によるシリコンの反応性イオンエッチング |
| US8536061B2 (en) | 2010-08-05 | 2013-09-17 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713137A (en) * | 1980-06-24 | 1982-01-23 | Toshiba Corp | Amorphous alloy for magnetic head |
-
1982
- 1982-11-26 JP JP20598182A patent/JPS58100684A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713137A (en) * | 1980-06-24 | 1982-01-23 | Toshiba Corp | Amorphous alloy for magnetic head |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63278339A (ja) * | 1986-12-19 | 1988-11-16 | アプライド マテリアルズインコーポレーテッド | シリコンおよび珪化物のための臭素およびヨウ素エッチング方法 |
| US6020270A (en) * | 1986-12-19 | 2000-02-01 | Applied Materials, Inc. | Bomine and iodine etch process for silicon and silicides |
| JPS63261835A (ja) * | 1987-04-20 | 1988-10-28 | Fujitsu Ltd | 電極・配線形成方法 |
| WO1989003402A1 (en) * | 1987-10-07 | 1989-04-20 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
| US5157091A (en) * | 1987-10-07 | 1992-10-20 | Murahara Masataka | Ultraviolet-absorbing polymer material and photoetching process |
| JPH0286126A (ja) * | 1988-07-11 | 1990-03-27 | Philips Gloeilampenfab:Nv | 臭化水素によるシリコンの反応性イオンエッチング |
| US8536061B2 (en) | 2010-08-05 | 2013-09-17 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363209B2 (enrdf_load_stackoverflow) | 1991-09-30 |
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